Electronics-Silicon Devices and Materials(Date:1996/12/05)

Presentation
表紙

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[Date]1996/12/5
[Paper #]
目次

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[Date]1996/12/5
[Paper #]
Near-Infrared Photoluminescence from Si Nanocrystals

S. Takeoka,  Y. Kanzawa,  M Fujii,  S. Hayashi,  K. Yamamoto,  

[Date]1996/12/5
[Paper #]SDM96-142
Photoluminescence from Porous Silicon Anodized under Time-Dependent Photo-Irradiation

M. Okamoto,  T. Nagao,  T. Ooiwa,  A. Hatta,  T. Ito,  

[Date]1996/12/5
[Paper #]SDM96-143
Two Dimensional Analysis of Photoluminescence from Porous Silicon

Toshihiro Matsuda,  Atsushi Shimbo,  Takanori Hayashi,  Katsumi Tanino,  Takashi Ohzone,  

[Date]1996/12/5
[Paper #]SDM96-144
Fine Structure of Metal-Plated Porous Silicon

T. Ooiwa,  T. Nagao,  M. Okamoto,  A. Hatta,  T. Ito,  

[Date]1996/12/5
[Paper #]SDM96-145
Photoluminescence of Er doped Si-rich SiO2 films

M. Yoshida,  Y. Kanzawa,  M. Fuji,  S. Hayashi,  K. Yamamoto,  

[Date]1996/12/5
[Paper #]SDM96-146
Structural relaxation in gate oxide by phosphorous redistribution

K. Morino,  S. Miyazaki,  M. Hirose,  

[Date]1996/12/5
[Paper #]SDM96-147
Optical Characterization of Si Surface Having Ultrathin Oxide and Plasma-damaged Layer

Takaaki IMAI,  Koji ERIGUCHI,  Akira FUJIMOTO,  Masanori OKUYAMA,  

[Date]1996/12/5
[Paper #]SDM96-148
Low Temperature Processing of Ultra Thin SiO_2 film for Gate Insulator

T Koike,  T. Ftitatsuyama,  S. Muranaka,  T. Fuyuki,  H. Matsunami,  

[Date]1996/12/5
[Paper #]SDM96-149
Plasma CVD of SiO:F Films from Tetraisocyanatesilane

Yuko NAKAGAMI,  Mahito SAWADA,  Tatsuru SHIRAFUJI,  Yasuaki HAYASHI,  Shigehiro NISHINO,  

[Date]1996/12/5
[Paper #]SDM96-150
Oxide-Voltage and Its Polarity Dependence of Interface State Generation in Si MOS Capacitors

Akihiro SHIMADA,  Masao INOUE,  Junji SHIRAFUJI,  

[Date]1996/12/5
[Paper #]SDM96-151
Quantum Mechanical Analysis of Conduction Mechanism for Thin Oxide-Nitride-Oxide Films under Electric Field Concentration.

N. MATSUO,  H. FUJIWARA,  T. MIYOSHI,  

[Date]1996/12/5
[Paper #]SDM96-152
Breakdown mechanism of gate oxide

T. Tomita,  H. Utsunomiya,  K. Umeda,  K. Taniguchi,  

[Date]1996/12/5
[Paper #]SDM96-153
Electron Mobility in 6H-(0001)SiC Inversion Layers

K. MASAKI,  C. HAMAGUCHI,  W. Xie,  M.R. Melloch,  J.A. Cooper,  

[Date]1996/12/5
[Paper #]SDM96-154
Smoothing of SiC surface by Gas Cluster Ion Beams

N. Toyoda,  H. Kitani,  J. Matsuo,  I. Yamada,  

[Date]1996/12/5
[Paper #]SDM96-155
[OTHERS]

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[Date]1996/12/5
[Paper #]