Electronics-Silicon Devices and Materials(Date:1996/07/18)

Presentation
表紙

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[Date]1996/7/18
[Paper #]
目次

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[Date]1996/7/18
[Paper #]
Impact of Ba_xSr_<(1-x)>TiO_3 as Cell Capacitor Dielectrics on Dynamic Random Access Memories in the 21st Century : Development of High-dielectric-Constant Thin Films for Simple DRAM Cell Capacitor

Ken Numata,  Yukio Fukuda,  Katsuhiro Aoki,  Yasutoshi Okuno,  Akitoshi Nishimura,  

[Date]1996/7/18
[Paper #]SDM96-50,ICD96-70
Reversed-STacked-Capacitor (RSTC) DRAM Cell Suitable for Embedded DRAM's

Nobuo Sasaki,  Shunji Nakamura,  Hiroshi Horie,  Yasuo Nara,  Kouji Asano,  Tetsu Fukano,  

[Date]1996/7/18
[Paper #]SDM96-51,ICD96-71
A New Testing Methodology for Flash EEPROM Devices

H. Hazama,  T. Himeno,  N. Matsukawa,  K. Sakui,  M. Oshikiri,  K. Masuda,  K. Kanda,  Y. Itoh,  J. Miyamoto,  K. Hashimoto,  

[Date]1996/7/18
[Paper #]SDM96-52,ICD96-72
Capacitance coupled Bus with Negative Delay Circuit for High speed and Low Power (10GB/s<500mW) Synchronous DRAMs

Toshio Yamada,  Toshikazu Suzuki,  Masashi Agata,  Atsushi Fujiwara,  Tsutomu Fujita,  

[Date]1996/7/18
[Paper #]SDM96-53,ICD96-73
Low Voltage / Low Power SOI-DRAM with Multiple Body Control Circuits

Teruhiko Amano,  Fukashi Morishita,  Shigehiro Kuge,  Shigeki Tomishima,  Kazutami Arimoto,  

[Date]1996/7/18
[Paper #]SDM96-54,ICD96-74
A 0.5 V MTCMOS/SIMOX Circuit with 200 ps Logic Gate

Takakuni Douseki,  Satoshi Shigematsu,  Yasuyuki Tanabe,  Mitsuru Harada,  Hiroshi Inokawa,  Toshiaki Tsuchiya,  

[Date]1996/7/18
[Paper #]SDM96-55,ICD96-75
A Data Recovery Circuit for Burst Signal Using 440MHz CMOS Direct Phase Controlled VCO

Akira Yoshida,  Takashi Taya,  Nobusuke Yamaoka,  Syuichi Matsumoto,  Tomonobu Yokoyama,  

[Date]1996/7/18
[Paper #]SDM96-56,ICD96-76
[OTHERS]

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[Date]1996/7/18
[Paper #]