Electronics-Silicon Devices and Materials(Date:1996/01/26)

Presentation
表紙

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[Date]1996/1/26
[Paper #]
目次

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[Date]1996/1/26
[Paper #]
The WSix Interconnection Using WSixN Diffusion Barrier Formed with ECR Nitrogen Plasma

A Hirata,  T Hosoya,  K Machida,  Y Honma,  H Akiya,  

[Date]1996/1/26
[Paper #]SDM95-201
Sub-Quarter Micron Titanium Salicide Technology using High-Temperature Sputtering

Kunihiro Fujii,  Kuniko Kikuta,  Shinichi Chikaki,  Takamaro Kikkawa,  

[Date]1996/1/26
[Paper #]SDM95-202
Influence of the sputtering method of TiN/Ti films on contact resistance

R Kanamura,  H Inoue,  S Suzuki,  H Kenmotsu,  I Moriyama,  M Sasaki,  

[Date]1996/1/26
[Paper #]SDM95-203
Reaction Mechanism of TiN-CVD Process from TiCl_4 and NH_3

Y Shimogaki,  T Ohkubo,  T Saito,  Y Egashira,  K Sugawara,  H Komiyama,  

[Date]1996/1/26
[Paper #]SDM95-204
High-Speed Chemical Vapor Deposition of Aluminum using Liquid Delivery System

Yasuo Matsumiya,  Susumu Yamazaki,  Kasuo Nakajima,  

[Date]1996/1/26
[Paper #]SDM95-205
Evaluation of CMP-Cu interconnects prepared with CVD and with sputter-reflow

M Hoshino,  N Misawa,  K Kakuta,  N Ohsako,  S Okamoto,  T Ohba,  H Yagi,  M Yamada,  Y Furumura,  

[Date]1996/1/26
[Paper #]SDM95-206
Properties of Cu interconnection

Yoshihiko Toyoda,  Tetsuo Fukada,  Takeshi Mori,  Makiko Hasegawa,  Noboru Mikami,  

[Date]1996/1/26
[Paper #]SDM95-207
Cu Inlaid Interconnect Process with Simultaneously Filled Contact-Plugs

G Minamihaba,  T Iijima,  H Tamura,  Y Shimooka,  T Kawanoue,  K Suguro,  H Hirabayashi,  N Sakurai,  H Ohkawa,  T Obara,  T Kubota,  M Koyama,  T Idaka,  

[Date]1996/1/26
[Paper #]SDM95-208
Effect of underlying TiN / Ti sputtering temperature for Al/ TiN /Ti structure

Tomoko Sekiguchi,  Takashi Aoyama,  Masayuki Suzuki,  Shinji Nishihara,  

[Date]1996/1/26
[Paper #]SDM95-209
Effect of Thin W Oxide on Resistance Increase in Annealed Al / W Interconnects

M Sekiguchi,  Y Yamanaka,  T Fujii,  M Fukumoto,  S Mayumi,  

[Date]1996/1/26
[Paper #]SDM95-210
Characterization of Metal Line Resistance Change during Electromigration Test in Al Interconnects

Toshio Yamaguchi,  Keiichi Hashimoto,  Hiroshi Onoda,  

[Date]1996/1/26
[Paper #]SDM95-211
Analysis of SiO_2 Etching Characteristics in Low Pressure HF / H_2O Vapor Process

Naruhiko NAKANISHI,  Nobuyoshi KOBAYASHI,  

[Date]1996/1/26
[Paper #]SDM95-212
[OTHERS]

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[Date]1996/1/26
[Paper #]