Electronics-Silicon Devices and Materials(Date:1995/12/07)

Presentation
表紙

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[Date]1995/12/7
[Paper #]
目次

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[Date]1995/12/7
[Paper #]
Characterization of Clean and Fluorine-Treated Surface of Si(100) by Infrared Reflection Absorption Spectroscopy

Yoshiaki KURIOKA,  Katsuhide OKUMURA,  Masanori OKUYAMA,  Yoshihiro HAMAKAWA,  

[Date]1995/12/7
[Paper #]SDM95-174
Characterization of Si Surface at Initial Oxidation Stage by Photoreflectance Spectroscopy

Takaaki IMAI,  Akira FUJIMOTO,  Masanori OKUYAMA,  Yoshihiro HAMAKAWA,  

[Date]1995/12/7
[Paper #]SDM95-175
Numerical Analysis for Conduction Mechanism of Thin Oxide-Nitride-Oxide Films Formed on Rough Poly-Si

N. MATSUO,  H. FUJIWARA,  T. MIYOSHI,  T. KOYANAGI,  

[Date]1995/12/7
[Paper #]SDM95-176
Generation Mechanism and Nature of (100) Si/SiO_2 Interface States Induced by F-N Tunnel Current Stress

Masao INOUE,  Junji SHIRAFUJI,  

[Date]1995/12/7
[Paper #]SDM95-177
Conduction Mechanism in TEOS-SiO_2 Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition

T. Koike,  T. Ogura,  T. Fuyuki,  H. Matsunami,  

[Date]1995/12/7
[Paper #]SDM95-178
Deposition of SiO_2 films from tetra isocyanate silane

Mahito SAWADA,  Taturu SHIRAFUJI,  Yasuaki HAYASHI,  

[Date]1995/12/7
[Paper #]SDM95-179
A Study of Film Structure in PECVD SiOF(II)

Satoshi Koizumi,  Kimiaki Shimokawa,  Masaki Yoshimaru,  

[Date]1995/12/7
[Paper #]SDM95-180
Atomic Layer Controlled Deposition of Silicon-Nitride with Self-Limiting Mechanism

Hiroshi Goto,  Kentaro Shibahara,  Shin Yokoyama,  

[Date]1995/12/7
[Paper #]SDM95-181
Preparation and Characterization of Highly C-Axis-Oriented Bi_4Ti_3O_<12> Thin Films

Masaki YAMAGUCHI,  Kensuke KAWANABE,  Takao NAGATOMO,  Osamu OMOTO,  

[Date]1995/12/7
[Paper #]SDM95-182
Crystallographical and Electrical properties of RF-sputtered BST Thin Films

Shinobu Takehiro,  Shih-Chang Chen,  Masaki Yoshimaru,  

[Date]1995/12/7
[Paper #]SDM95-183
[OTHERS]

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[Date]1995/12/7
[Paper #]