Electronics-Silicon Devices and Materials(Date:1995/10/20)

Presentation
表紙

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[Date]1995/10/20
[Paper #]
目次

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[Date]1995/10/20
[Paper #]
Dry development for G^b DRAM

Yasuki Kimura,  Hiroyuki Endo,  Akihiro Endo,  

[Date]1995/10/20
[Paper #]SDM95-145
Development of Neutral Beam Assisted Etching Technic

Ken'etsu Yokogawa,  Takashi Yunogami,  Tatsumi Mizutani,  

[Date]1995/10/20
[Paper #]SDM95-146
Etching of Single Crystal Al2O3 Films using Si Ion Implantation

Hoon Kim,  Makoto Ishida,  

[Date]1995/10/20
[Paper #]SDM95-147
Characterization of Highly Selective SiO_2/Si_3N_4 etching of High-Aspect-Ratio Holes

Hisataka Hayashi,  Kazuaki Kurihara,  Makoto Sekine,  

[Date]1995/10/20
[Paper #]SDM95-148
Transformation of a Refractive Metal Surface by Via Hole Etching and Its Influence on Contact Resistance

Shoji Sudo,  Yoshinari Ichihashi,  Norihiro Ikeda,  Kaoru Taketa,  Kazunobu Mameno,  

[Date]1995/10/20
[Paper #]SDM95-149
Low-temperature Si epitaxial growth by remote plasma-enhanced CVD

Teruaki Nishida,  Kazutoshi Utsumi,  Ashtosh Ganjoo,  Akira Yoshida,  

[Date]1995/10/20
[Paper #]SDM95-150
Preperation of silicon oxynitride thin films by remote-plasma excited nitrogen and oxygen

Yoji Saito,  Nobuhiro Kawabe,  

[Date]1995/10/20
[Paper #]SDM95-151
Growth of ZnSe films on Silicon by H-radical assisted MOCVD

M. Morita,  T. Aoki,  Y. Nakanishi,  Y. Hatanaka,  

[Date]1995/10/20
[Paper #]SDM95-152
Preparation of Silicon Nitride Film from Organo-silicon by Remote Plasma Method

Ken Kitamura,  Sunil Wickramanayaka,  Yoichiro Nakanishi,  Hatanaka Yoshinori,  

[Date]1995/10/20
[Paper #]SDM95-153
Estimation of yield suppression for Gigabit DRAMs caused by Vt variation due to fluctuation in dopant distributions

Shigeyoshi Watanabe,  Takaaki Minami,  

[Date]1995/10/20
[Paper #]SDM95-154
[OTHERS]

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[Date]1995/10/20
[Paper #]