Electronics-Silicon Devices and Materials(Date:1995/07/29)

Presentation
表紙

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[Date]1995/7/29
[Paper #]
目次

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[Date]1995/7/29
[Paper #]
Trend of NAND Flash Memory and Future Development

Masaki Momodomi,  Riichiro Shirota,  Koji Sakui,  Tetsuo Endoh,  Fujio Masuoka,  

[Date]1995/7/29
[Paper #]
A Shielded Bitline Sensing Technology for a High-Density and Low-Voltage NAND EEPROM Design

Koji Sakui,  Tomoharu Tanaka,  Hiroshi Nakamura,  Masaki Momodomi,  Tetsuo Endoh,  Riichiro Shirota,  Shigeyoshi Watanabe,  Kazunori Ohuchi,  Fujio Masuoka,  

[Date]1995/7/29
[Paper #]
32Mb NAND Flash Memory for Mass Storage Applications

Young-Joon Choi,  Kang-Deog Seo,  Young-Ho Lim,  Byung-Hoon Seo,  

[Date]1995/7/29
[Paper #]
A 5V-ONLY 16M FLASH MEMORY USING A CONTACTLESS ARRAY OF SEGMENTED SOURCE-SIDE INJECTION CELLS

Jo-Weon Park,  Gyu-Wan Kwon,  Young-Jung Choi,  Dae-Hyun Kim,  

[Date]1995/7/29
[Paper #]
Thin Oxynitride Dielectrics for Flash Memories and CMOSFET

T. Arakawa,  R. Matsumoto,  Y. Kawazu,  T. Hayashi,  M. Ohno,  

[Date]1995/7/29
[Paper #]
[OTHERS]

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[Date]1995/7/29
[Paper #]