Electronics-Silicon Devices and Materials(Date:1994/11/25)

Presentation
表紙

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[Date]1994/11/25
[Paper #]
目次

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[Date]1994/11/25
[Paper #]
First-principles calculations of the electronic properties of Si clusters

Yoshinori Hayafuji,  Hitoshi Kimura,  Toshiharu Imanaga,  Hirohiko Adachi,  

[Date]1994/11/25
[Paper #]SDM94-140
Structure stabilization of partially oxidized porous Silicon and its optical properties

Osamu Arakaki,  Keisuke Furuta,  Toshiyuki Yoneda,  Takuo Yamamoto,  Akimitsu Hata,  Toshimichi Ito,  Akio Hiraki,  

[Date]1994/11/25
[Paper #]SDM94-141
Electrical conduction in SiO_2 thin films doped with group IV elements

Yoku Inoue,  Takeshi Sugimoto,  Shinji Hayashi,  Keiichi Yamamoto,  

[Date]1994/11/25
[Paper #]SDM94-142
Study of surface layer during plasma etching using laser induced thermal desorption(LITD)

Kenichi Otsuka,  Kazuhiro Karahashi,  Jiro Matsuo,  Moritaka Nakamura,  H.H. Sawin,  

[Date]1994/11/25
[Paper #]SDM94-143
Fabrication and Electrical Properties of Yttrium Silicide/Silicon

Yukinobu Tanida,  Reiji Hatori,  Junji Shirafuji,  

[Date]1994/11/25
[Paper #]SDM94-144
Improvement of organic SOG film quality by Ion-implantation

Hideki Mizuhara,  Hiroyuki Watanabe,  Masaki Hirase,  Kaori Misawa,  Hiroyuki Aoe,  

[Date]1994/11/25
[Paper #]SDM94-145
A study of film structure in PECVD SiOF

Takashi Usami,  Kimiaki Shimokawa,  Masaki Yoshimaru,  

[Date]1994/11/25
[Paper #]SDM94-146
Improvement of properties at Si interface with SiN fabricated by photo-CVD and a new method for evaluating traps in insulators

Hideharu Matsuura,  Masahiro Yoshimoto,  Hiroyuki Matsunami,  

[Date]1994/11/25
[Paper #]SDM94-147
Thermal Annealing Effect of Silicon Nitride Film Deposited by Photo-CVD

Yasushi Deguchi,  Michio Ohnishi,  Yoshihiro Takahashi,  Kazunori Ohnishi,  

[Date]1994/11/25
[Paper #]SDM94-148
Investigation of defects in SiO2 photo-chemical vapor deposition film by using molecular orbital calculation

Takeshi Kanashima,  Masanori Okuyama,  Yoshihiro Hamakawa,  

[Date]1994/11/25
[Paper #]SDM94-149
A Study of Growth Mechanism in TEOS-O_3 APCVD SiO_2

Toru Yoshie,  Kimiaki Shimokawa,  Masaki Yoshimaru,  

[Date]1994/11/25
[Paper #]SDM94-150
Study of trapped charge distribution in MOS structure SiO_2 film with photo I-V method

Shin-ya Iwasaki,  Takeshi Kanashima,  Masanori Okuyama,  Yoshihiro Hamakawa,  

[Date]1994/11/25
[Paper #]SDM94-151
Deposition of SiO_2 films from TEOS by ECR CVD and its application to evaluation of MOS interface

Masatoshi Inaba,  Shiro Fukumori,  Hideki Nose,  Kazuhiro Nakata,  Takashi Okabe,  Shinzo Yoshikado,  Ichiro Taniguchi,  

[Date]1994/11/25
[Paper #]SDM94-152
Deposition of High-Quality Silicon Dioxide by Remote Plasma Enhanced Chemical Vapor Deposition and Application to Si-MOSFET

Taku Ogura,  Tohru Oka,  Yoshikazu Fujimori,  Takashi Fuyuki,  Hiroyuki Matsunami,  

[Date]1994/11/25
[Paper #]SDM94-153
a.c.Conductance Measurement of MOS Diodes Degraded by FN Injection

Masao Inoue,  Junji Shirafuji,  

[Date]1994/11/25
[Paper #]SDM94-154
Evaluation of oxide damage due to ion implantation into MOS structure

Hideharu Nagasawa,  Atsuhiro Nishida,  Hideaki Fujiwara,  Kazunobu Mameno,  

[Date]1994/11/25
[Paper #]SDM94-155
Semiconductor surface treatment with gas cluster ion beam

Noriaki Toyoda,  Tsuyoshi Kaneko,  Tetsu Yoshizawa,  Makoto Akizuki,  Jiro Matsuo,  Gikan Takaoka,  Isao Yamada,  

[Date]1994/11/25
[Paper #]SDM94-156
[OTHERS]

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[Date]1994/11/25
[Paper #]