Electronics-Silicon Devices and Materials(Date:1994/11/24)

Presentation
表紙

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[Date]1994/11/24
[Paper #]
目次

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[Date]1994/11/24
[Paper #]
Deposition of a-Si:H Films by Using Large-Diameter Uniform ECR Plasma with Multi-Annular Antenna

Tomokazu Nakamura,  Yasuyoshi Yasaka,  

[Date]1994/11/24
[Paper #]SDM94-125
Analysis of Bonding Structure in a-SiC:H Deposited by Hybrid- Plasma CVD

Tadashi Fujii,  Masahiro Yoshimoto,  Takashi Fuyuki,  Hiroyuki Matsunami,  

[Date]1994/11/24
[Paper #]SDM94-126
Fragmentation model for phase transition in non-crystalline solids

Yuichi Masaki,  Naokatsu Shinohara,  Akio Kitagawa,  Masakuni Suzuki,  

[Date]1994/11/24
[Paper #]SDM94-127
Detection of Defect in Recrystallized Silicon Layers by Raman Imaging

Kohji Mizoguchi,  Shin-ichi Nakashima,  Hiroshi Harima,  

[Date]1994/11/24
[Paper #]SDM94-128
Secondary grain growth of poly-Si by high temperature annealing

Weifeng Qu,  Makoto Kugenuma,  Yuichi Masaki,  Yoshio Kakimoto,  Akio Kitagawa,  Masakuni Suzuki,  

[Date]1994/11/24
[Paper #]SDM94-129
Effect of high temperature annealing on defect density in poly-Si films

Makoto Kugenuma,  W-F Qu,  Yuichi Masaki,  Yoshio Kakimoto,  Akio Kitagawa,  Masakuni Suzuki,  

[Date]1994/11/24
[Paper #]SDM94-130
Evaluation of a bonding interface on a direct bonded wafer with contactless LBIC method

Yuji Yamaguchi,  Shun-ichiro Ishigami,  Akira Usami,  Kazunori Matsuki,  Tsutomu Takeuchi,  

[Date]1994/11/24
[Paper #]SDM94-131
Evaluation of low-temperature silicon epitaxial layers.

Akihiro Miyauchi,  Kazuhiro Ueda,  Yousuke Inoue,  Takaya Suzuki,  

[Date]1994/11/24
[Paper #]SDM94-132
Low-Temperature Selective Epitaxial Growth of Si by Photo-CVD

Hiroshi Minakata,  Takayuki Oshima,  Akira Yamada,  Makoto Konagai,  

[Date]1994/11/24
[Paper #]SDM94-133
Study on Si/ow temperature (600℃) epitaxial growth using UHV/CVD s ystem

Katsuya Oda,  Yukihiro Kiyota,  

[Date]1994/11/24
[Paper #]SDM94-134
Contactless evaluation of the surface recombination property of silicon with an ion-implanted layer

Takanori Makino,  Hideaki Yoshida,  Masaya Ichimura,  Akira Usami,  

[Date]1994/11/24
[Paper #]SDM94-135
Precise SIMS Analysis of Shallow Doping Profiles Based on the Internal Standard Method

Guo-Lin Liu,  Izumi Aikawa,  Hidetsugu Uchida,  Shigeki Kuroda,  Norio Hirashita,  

[Date]1994/11/24
[Paper #]SDM94-136
Growth of High-Quality 6H-,4H-SiC Crystals and Application to High- Power Schottky Barrier Diodes

Akira Itoh,  Hironobu Akita,  Daisaku Takemoto,  Tanio Urushidani,  Tsunenobu Kimoto,  Hiroyuki Matsunami,  

[Date]1994/11/24
[Paper #]SDM94-137
Evaluation of characteristics of Rapidly Thermal Processed SOI wafer and PIN photodiodes.

Katsuhiro Fujiyoshi,  Hideaki Yoshida,  Yoshimaro Fujii,  Tatsumi Yamanaka,  Akira Usami,  

[Date]1994/11/24
[Paper #]SDM94-138
Shallow implantation by Gas Source ICB Technique

Daisuke Takeuchi,  Atsushi Kitai,  Noriaki Toyoda,  Jiro Matsuo,  Gikan Takaoka,  Isao Yamada,  

[Date]1994/11/24
[Paper #]SDM94-139
[OTHERS]

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[Date]1994/11/24
[Paper #]