Electronics-Silicon Devices and Materials(Date:1994/07/27)

Presentation
表紙

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[Date]1994/7/27
[Paper #]
目次

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[Date]1994/7/27
[Paper #]
Dependence of Various Electrical Characteristics on Channel Impurity Concentration in 0.1μm CMOSFETs

Mizuki Ono,  Masanobu Saito,  Takashi Yoshitomi,  Claudio Fiegna,  Tatsuya Ohgurou,  Hisayo Sasaki Momose,  Hiroshi Iwai,  

[Date]1994/7/27
[Paper #]SDM94-58
Characteristics of 0.15μm CMOS Devices

Akira Tanabe,  Kiyoshi Takeuchi,  Toyoji Yamamoto,  Takeo Matsuki,  Takemitsu Kunio,  

[Date]1994/7/27
[Paper #]SDM94-59
Physical Limitation of ULSIs due to Performance Fluctuations of MOSFETs

Tomohisa Mizuno,  

[Date]1994/7/27
[Paper #]SDM94-60
A Study On The Threshold Voltage Satisfying Normally Turn-Off State Conditions Of Depletion PMOSFET In MOS Circuits

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[Date]1994/7/27
[Paper #]
Sputtered TiN Gate Electrode for Submicron MOSFETS

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[Date]1994/7/27
[Paper #]
A study on delay time reduction of deep-submicron CMOS inverter

Manabu Deura,  Yasuo Nara,  Kenich Gotoh,  Tatsuya Yamazaki,  Tetsu Fukano,  Toshihiro Sugii,  

[Date]1994/7/27
[Paper #]SDM94-63
PRECISION CHANNEL CONDUCTANCE MODELING FOR ANALOG CMOS CIRCUITSIMULATIONS

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[Date]1994/7/27
[Paper #]
Shallow-trench-isolated 0.2-μm CMOS and its Application to Ultralow-power Frequency Dividers

Hiroshi Inokawa,  Yousuke Yamamoto,  Yukio Okazaki,  Toshio Kobayashi,  Masayasu Miyake,  Hiromu Ishii,  

[Date]1994/7/27
[Paper #]SDM94-65
A P-well and Base Merged BiCMOS Technology

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[Date]1994/7/27
[Paper #]
The Proposal of ESD Scheme in High Density DRAMs

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[Date]1994/7/27
[Paper #]
Anti-fuse Technology using Current-Drive Silicidation

Hiroshi Suzuki,  Jong G.S.,  Masaki Hirayama,  Tadahiro Ohmi,  

[Date]1994/7/27
[Paper #]SDM94-68
[OTHERS]

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[Date]1994/7/27
[Paper #]