Electronics-Silicon Devices and Materials(Date:1994/07/25)

Presentation
表紙

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[Date]1994/7/25
[Paper #]
目次

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[Date]1994/7/25
[Paper #]
Effects of the velocity-saturated region on MOSFET Characteristics

Kiyoshi Takeuchi,  

[Date]1994/7/25
[Paper #]SDM94-34
The Study on Wafer pretreatment of Liquid phase Deposition of Si- MOS diodes

Ngoc Duyet Tran,  Xiaoyl Han,  Nobuo Haneji,  

[Date]1994/7/25
[Paper #]SDM94-35
Effects to MOS Devices of Hydrogen Plasma Treatment

Yukinori Kuroki,  Keiichi Tsukamoto,  

[Date]1994/7/25
[Paper #]SDM94-36
High Quality Ultra-Thin Oxide Formation Technology : The Reliability of Hydrogen-Radical-Balanced Steam Oxide

Tadahiro Ohmi,  

[Date]1994/7/25
[Paper #]SDM94-37
Area and thickness dependence of the TDDB characteristics of silicon dioxides

Akinobu Teramoto,  Kiyoteru Kobayashi,  Makoto Hirayama,  

[Date]1994/7/25
[Paper #]SDM94-38
Reliability of Ultra-thin Gate Oxide in p^+ Polysilicon Gate MOS Structures

Ken'ichi Uwasawa,  Tohru Mogami,  Takemitsu Kunio,  

[Date]1994/7/25
[Paper #]SDM94-39
Characteristics of PMOSFET with ultra-shallow junctions utilizing boron diffusion from poly-Si/oxide(BDSOX)

Mitsuhiro Togo,  Tohru Mogami,  Ken-ichi Uwasawa,  Takemitsu Kunio,  

[Date]1994/7/25
[Paper #]SDM94-40
The Effect of Hydrogenation and High Voltage Stress on PolySi PMOS TFT

Motoharu Arimura,  Alberto Adan,  Atsushi Kagisawa,  

[Date]1994/7/25
[Paper #]SDM94-41
A p^+ poly Si gate with nitrogen-doped poly-Si layer for deep submicron PMOSFETs

Satoshi Nakayama,  

[Date]1994/7/25
[Paper #]SDM94-42
0.25μm Buried-Channel PMOSFET′s Using Channel Doping Through Amor phous Si Thin Film

Hiroshi Ishida,  Akihiro Shimizu,  Nagatoshi Ohki,  Toshiaki Yamanaka,  Takahiro Nagano,  

[Date]1994/7/25
[Paper #]SDM94-43
Electromigration test under high frequency pulsed current using on- chip pulse generator

Shinya Ito,  Ko Noguchi,  Tadahiko Horiuchi,  Koichiro Okumura,  

[Date]1994/7/25
[Paper #]SDM94-44
[OTHERS]

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[Date]1994/7/25
[Paper #]