Electronics-Silicon Devices and Materials(Date:1994/05/26)

Presentation
表紙

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[Date]1994/5/26
[Paper #]
目次

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[Date]1994/5/26
[Paper #]
Center Wordline Cell:A New Symmetric Layout Cell for 0.25μm SRAM

Masaaki Takizawa,  Ihachi Naiki,  Michio Mano,  Tadayuki Kimura,  Tsutomu Ichikawa,  Masanori Tsukamoto,  Shigeru Fujita,  Tetsuji Nagayama,  Masayoshi Sasaki,  

[Date]1994/5/26
[Paper #]SDM94-16,ICD94-27
A Stacked Split Word-line(SSW)cell for low voltage operation,large capacity,high speed SRAMs

Shuji Ikeda,  Kyoichiro Asayama,  Naotaka Hashimoto,  Eri Fujita,  Yasuko Yoshida,  Atsuyoshi Koike,  Toshiaki Yamanaka,  Koichiro Ishibashi,  Satoshi Meguro,  

[Date]1994/5/26
[Paper #]SDM94-17,ICD94-28
NAND-Structured Cell Technologies for 256Mb DRAMs

Takashi Yamada,  Takeshi Hamamoto,  Masami Aoki,  Shigeru Ishibashi,  Hitomi Kawaguchiya,  Yutaka Ishibashi,  Kouji Hashimoto,  Hideki Kanai,  Yoshihiko Saito,  

[Date]1994/5/26
[Paper #]SDM94-18,ICD94-29
Ultra-Thin Ta_2O_5 Capacitor Technology for 1Gbit DRAM

Satoshi Kamiyama,  Hiroshi Suzuki,  Hirohito Watanabe,  Haruhiko Ono,  

[Date]1994/5/26
[Paper #]SDM94-20,ICD94-31
A high capacitive coupling ratio cell for 3V single power supply 64Mbit flash memory.

Kohji Kanamori,  Yoshiaki Hisamune,  Taishi Kubota,  Yoshiyuki Suzuki,  Masaru Tsukiji,  Eiji Hasegawa,  Akihiko Ishitani,  Takeshi Okazawa,  

[Date]1994/5/26
[Paper #]SDM94-19,ICD94-30
A thin film SOI-DRAM with stacked capacitor cells

Toshiyuki Oashi,  Hiroshi Kimura,  Fukashi Morishita,  Katsuhiro Suma,  Takahisa Eimori,  Yasuro Inoue,  Tadashi Nishimura,  

[Date]1994/5/26
[Paper #]SDM94-21,ICD94-32
Wafer Burn-in(WBI)Technology for High Density DRAM

Hiroyuki Noji,  Natsuki Kushiyama,  Tohru Yoshida,  Mitsuru Kataoka,  Shinji Doi,  Hirokazu Ezawa,  Tohru Watanabe,  Tohru Furuyama,  

[Date]1994/5/26
[Paper #]SDM94-22,ICD94-33
[OTHERS]

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[Date]1994/5/26
[Paper #]