Electronics-Silicon Devices and Materials(Date:1993/12/10)

Presentation
表紙

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[Date]1993/12/10
[Paper #]
目次

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[Date]1993/12/10
[Paper #]
Time-Resolved Photoluminescence of Thermally Oxidized Porous Si

Kazutoshi Shiba,  Kunihide Sakamoto,  Seiichi Miyazaki,  Masataka Hirose,  

[Date]1993/12/10
[Paper #]SDM93-172
Visible-light emission from a Si-doped SiO_2 thin film deposited by sputtering

Shigeo Noma,  Hitoshi Nakamura,  Hiroshi Ono,  Shinji Nozaki,  Hiroshi Morisaki,  

[Date]1993/12/10
[Paper #]SDM93-173
Anodic Oxidation Effect of Porous Silicon on its Visible Light Emission Property

Kenji Motoi,  Takuo Yamamoto,  Toshiyuki Yoneda,  Osamu Arakaki,  Akimitsu Hata,  Toshimiti Ito,  Akio Hiraki,  

[Date]1993/12/10
[Paper #]SDM93-174
Luminescent porous silicon irradiated by visible light

Emile I. Pattiwael,  Hiroyasu Ishikawa,  Takao Nagatomo,  Osamu Omoto,  

[Date]1993/12/10
[Paper #]SDM93-175
Visible light emission from pn junction of anodized porous silicon

Takuo Yamamoto,  Toshiyuki Yoneda,  Kenji Motoi,  Osamu Arakaki,  Akimitsu Hata,  Toshimichi Ito,  Akio Hiraki,  

[Date]1993/12/10
[Paper #]SDM93-176
Stabilization of PL and EL characteristics on oxidized porous Si using H-plasma treatment

Osamu Arakaki,  Kenji Motoi,  Takuo Yamamoto,  Toshiyuki Yoneda,  Akimitsu Hata,  Toshimichi Ito,  Akio Hiraki,  

[Date]1993/12/10
[Paper #]SDM93-177
Contactless measurement of Si suface temperature by photoreflectance spectroscopy

Hideo Katsumi,  Akira Fujimoto,  Masanori Okuyama,  Yoshihiro Hamakawa,  

[Date]1993/12/10
[Paper #]SDM93-178
Micro-analysis of Submicron Via Holes by Using AES

Guo-Lin Liu,  Satoshi Ikeda,  Yasuyuki Okuno,  Hidetsugu Uchida,  Norio Hirashita,  

[Date]1993/12/10
[Paper #]SDM93-179
Effect of RF bias on Si surface in ECR plasma etching

Yukihiro Sasagawa,  Masatoshi Inaba,  Shinzo Yoshikado,  Ichiro Taniguchi,  

[Date]1993/12/10
[Paper #]SDM93-180
Diminution of electrical activity and reduction of diffusivity of As implanted into Si by simultaneously implanting B and As ions

Katsuhiro Yokota,  Youichi Okamoto,  Kouji Oda,  Yasunori Ando,  Kouji Matsuda,  Masanori Watanabe,  Kouhei Sekine,  

[Date]1993/12/10
[Paper #]SDM93-181
Deposition Processes of Silicon Dioxide Film by TEOS-O_3 Atmospheric-Pressure Chemical Vapor Deposition

Koichi Ikeda,  Satoshi Nakayama,  Masahiko Maeda,  

[Date]1993/12/10
[Paper #]SDM93-182
Evaluation of charge build-up in wafer processing by using MOS capacitors with charge collecting electrodes

Hiroko Kubo,  Takashi Namura,  Kenji Yoneda,  Hiroshi Ohishi,  Yoshihiro Todokoro,  

[Date]1993/12/10
[Paper #]SDM93-183
Relation between breakdown of SiO_2 Thin Films and Conductance

Masao Inoue,  Junji Shirafuji,  

[Date]1993/12/10
[Paper #]SDM93-184
Evaluation of oxide damage due to ion implantation by the Q_BD> method

Kazunobu Mameno,  Atsuhiro Nishida,  Hideharu Nagasawa,  Hideaki Fujiwara,  Koji Suzuki,  Kiyoshi Yoneda,  

[Date]1993/12/10
[Paper #]SDM93-185
Improving gate oxide integrity of p+PMOSFET by using large grain size polysilicon gate

Munetaka Koda,  Yoshikatsu Shida,  Junichi Kawaguchi,  Takehiro Murakami,  Yoshio Kaneko,  

[Date]1993/12/10
[Paper #]SDM93-186
Effects of Fluorine on the Si-SiO_2 Interface Characteristics

Rieko Satoh,  Mieko Koshizuka,  Toshihiro Arai,  Takashi Tokuyama,  

[Date]1993/12/10
[Paper #]SDM93-187
Sol-gel derived PZT film on thin PTO under layer

Tomoya Nakahara,  Masaki Yoshimaru,  Masayoshi Ino,  

[Date]1993/12/10
[Paper #]SDM93-188
Fabrication and characterization of metal/incipient ferroelectric SrTiO_3/Si MIFS structures

Masahiro Taga,  Takeshi Kobayashi,  

[Date]1993/12/10
[Paper #]SDM93-189
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