Electronics-Silicon Devices and Materials(Date:1993/12/09)

Presentation
表紙

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[Date]1993/12/9
[Paper #]
目次

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[Date]1993/12/9
[Paper #]
Transient Phase Diagram for a-Si in Rapid Thermal Processes

Akio Kitagawa,  Masakuni Suzuki,  Lin Huang,  

[Date]1993/12/9
[Paper #]SDM93-153
Effect of annealing on Photoluminescence spectra and structure of a-SiNx:H Films

Shinji Makimura,  Kazuki Wakita,  Yoshikazu Nakayama,  

[Date]1993/12/9
[Paper #]SDM93-154
In-Situ Ellipsometric Monitoring For the Growth of poly-Si Thin Films by RF Plasma Enhanced Chemical Vapor Deposition

Shinji Nakajima,  Takafumi Nakayama,  Tatsuru Shirafuji,  Yasuaki Hayashi,  Kunihide Tachibana,  

[Date]1993/12/9
[Paper #]SDM93-155
Polycrystalline Silicon Film Growth by PECVD and Characterization by Spectroscopic Ellipsometer

Jayatissa Ahalapitia,  Michio Suzuki,  Yoichiro Nakanishi,  Yoshinori Hatanaka,  

[Date]1993/12/9
[Paper #]SDM93-156
Secondary grain growth in poly-Si films by high temperature gas flame annealing

Masahiko Suzumi,  Weifeng Qu,  Akio Kitagawa,  Masakuni Suzuki,  

[Date]1993/12/9
[Paper #]SDM93-157
Nucleation Control in Chemical Vapor Deposition of Thin Film Crystalline Silicon

Hiroyasu Yoshida,  Takashi Fuyuki,  Hiroyuki Matsunami,  

[Date]1993/12/9
[Paper #]SDM93-158
Preparation of Sic thin films by sputtering method

Yuichi Nakamura,  Satoru Sasakawa,  Kiichi Kamimura,  Masato Nakao,  Yoshiharu Onuma,  Sou Yonekubo,  

[Date]1993/12/9
[Paper #]SDM93-159
Effects of introducing SiH_2Cl_2 on low-temperature epitaxial Si growth

Takayuki Oshima,  Masashi Sano,  Akira Yamada,  Makoto Konagai,  Kiyoshi Takahashi,  

[Date]1993/12/9
[Paper #]SDM93-160
Characterization of Optical and Electrical Properties of Narrow- Bandgap a-Si:H/a-Ge:H Multilayers

Hidenori Deki,  Masanobu Ohmura,  Seiichi Miyazaki,  Masataka Hirose,  

[Date]1993/12/9
[Paper #]SDM93-161
Photoluminescence characteristics of Si_<1-x>Ge_x/Si disordered superlattices

Toshimichi Hasegawa,  Kyosuke Kuramoto,  Kam Koc Vong,  Akihiro Wakahara,  Akio Sasaki,  

[Date]1993/12/9
[Paper #]SDM93-162
Microscopic Growth Mechanism of GaAs on Micro-Facet Silicon Structure

Hidefumi Maeda,  Hitoshi Watatani,  Hiroshi Yakayama,  Taneo Nishino,  

[Date]1993/12/9
[Paper #]SDM93-163
Nondestructive and internal observation of MOSLSI using electron Acoustic signal

Keiichi Kagawa,  Ichiro Nakao,  Hiroshi Takenoshita,  

[Date]1993/12/9
[Paper #]SDM93-164
Evaluation of gettering efficiency in silicon wafer

Yoshinori Hayamizu,  Michihiro Mizuno,  Satoshi Ushio,  Takao Takenaka,  

[Date]1993/12/9
[Paper #]SDM93-165
Structural Characterization of a Bonded Silicon-on-Insulator Layer with Voids

Akira Usami,  Masaya Ichimura,  Takahisa Nakai,  Shun-ichiro Ishigami,  Takao Wada,  

[Date]1993/12/9
[Paper #]SDM93-166
Evaluation of bonded SOI wafers with lifetime and surface recombination velocity using non-contact LBIC method.

Yuji Yamaguchi,  Yoshimaro Fujii,  Akira Usami,  Takao Wada,  Kazunori Matsuki,  Tsutomu Takeuchi,  

[Date]1993/12/9
[Paper #]SDM93-167
The influence of oxygen as an impurity in the i-layer on the properties of a-Si films and a-Si solar cells

Toshihiro Kinoshita,  Masao Isomura,  Yoshihiro Hishikawa,  Shinya Tsuda,  Shoichi Nakano,  

[Date]1993/12/9
[Paper #]SDM93-168
Evaluation of the bonded SOI water,and characteristics of PIN photodiodes on the SOI layer

Keisuke Kaneko,  Yoshimaro Fujii,  Akira Usami,  Takao Wada,  

[Date]1993/12/9
[Paper #]SDM93-169
Numerical anarysis of Schottky barrier tunnel transistor(SBTT)

Reiji Hattori,  Yukinobu Tanida,  Junji Shirafuji,  

[Date]1993/12/9
[Paper #]SDM93-170
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