Electronics-Silicon Devices and Materials(Date:1993/08/24)

Presentation
表紙

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[Date]1993/8/24
[Paper #]
目次

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[Date]1993/8/24
[Paper #]
Self-Limited Atomic Layer Etching of Silicon

Takashi Matsuura,  Junichi Murota,  Koji Suzue,  Yasuji Sawada,  Tadahiro Ohmi,  

[Date]1993/8/24
[Paper #]SDM93-79
Selective Tungsten CVD with High Deposition Rate Using Cold Susceptor

Hiroshi Suzuki,  Yuuji Maeda,  Mizuho Morita,  Tadahiro Ohmi,  

[Date]1993/8/24
[Paper #]SDM93-80
Synchrotron-radiation induced desorption from chlorine-adsorbed GaAs surface

Isao Ochiai,  Naoshi Itabashi,  Seiji Yamamoto,  Kozo Mochiji,  

[Date]1993/8/24
[Paper #]SDM93-81
Anti-reflective technique for optical lithography

Tohru Ogawa,  

[Date]1993/8/24
[Paper #]SDM93-82
Charge-up measurements during ashing process

Motoki Kobayashi,  Takayuki Matsui,  Jun Kanamori,  

[Date]1993/8/24
[Paper #]SDM93-83
pH Controlled chemical mechanical polishing for ultra thin bonded SOI wafers

Fumitoshi Sugimoto,  Hiroshi Horie,  Yoshihiro Arimoto,  Takashi Ito,  

[Date]1993/8/24
[Paper #]SDM93-84
Characterization of Processing Environments for Ultra Clean Wafer Manufacturing

M.S.K. Chen,  S.Y. Lynn,  J.G. Langan,  S.E. Beck,  M.A. George,  G.A. Hames,  J.J. Wortman,  

[Date]1993/8/24
[Paper #]SDM93-85
SiO_2 Films Prepared by Liquid Phase Deposition

Nobuo Haneji,  Kenji Fukumitsu,  

[Date]1993/8/24
[Paper #]SDM93-86
Reaction at the Via Contact Interface in Double-Level-Aluminum Interconnection

Yasunori Inoue,  Shinichi Tanimoto,  Kazutoshi Tsujimura,  Tomio Yamashita,  Yoshikazu Ibara,  Yasuhiko Yamashita,  Kiyoshi Yoneda,  

[Date]1993/8/24
[Paper #]SDM93-87
Application of a p^+ poly Si gate with thin nitrogen doped layer to sob-1/4 μm dual gate CMOS

Yukio Okazaki,  Hiroshi Inokawa,  Satoshi Nakayama,  Toshio Kobayashi,  Masayasu Miyake,  Takashi Morimoto,  Tadahito Matsuda,  

[Date]1993/8/24
[Paper #]SDM93-88
[OTHERS]

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[Date]1993/8/24
[Paper #]