Electronics-Silicon Devices and Materials(Date:1993/08/23)

Presentation
表紙

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[Date]1993/8/23
[Paper #]
目次

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[Date]1993/8/23
[Paper #]
Evaluation of Arsenic Implanted Ultra-Shallow n^+/p Junction by Medium Energy Ion Scattering

Shin Yokoyama,  J. Radzimski Zbigniew,  Takeshi Watanabe,  Kensaku Ishibashi,  Masataka Hirose,  

[Date]1993/8/23
[Paper #]SDM93-72
Ion Implantation Technology By Eliminating Metal Sputtering Contamination For Forming 450℃-Annealed,Ultra Shallow Junctions

Kazuo Tomita,  Akira Nakada,  Tomohiro Migita,  Tadashi Shibata,  Tadahiro Ohmi,  Takahisa Nitta,  

[Date]1993/8/23
[Paper #]SDM93-73
W Contamination Effect on Electrical Characteristics of MOS Devices during Thermal Processing

Hiroyuki Kawahara,  Kenji Yoneda,  Hiroshi Ohishi,  Yoshihiro Todokoro,  

[Date]1993/8/23
[Paper #]SDM93-74
Ultra Clean Wet Cleaning Technology of Si Wafer Using Spin Cleaning

Naomichi Yonekawa,  Fumitomo Kunimoto,  W. Kern.Jr. Frederic,  Tadahiro Ohmi,  

[Date]1993/8/23
[Paper #]SDM93-75
Present Power Semiconductor Devices

Yasukazu Seki,  

[Date]1993/8/23
[Paper #]SDN93-76
Reliability issues of Flash memory cells.

Seiichi Aritome,  Riichiro Shirota,  Tetsuo Endoh,  Fujio Masuoka,  

[Date]1993/8/23
[Paper #]SDM93-77
77-K Temperature-Dimension Combination Scaling MOSFET

Michio Yokoyama,  Tetsuya Hidaka,  Kazuya Masu,  Kazuo Tsubouchi,  

[Date]1993/8/23
[Paper #]SDM93-78
[OTHERS]

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[Date]1993/8/23
[Paper #]