Electronics-Silicon Devices and Materials(Date:1993/07/26)

Presentation
表紙

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[Date]1993/7/26
[Paper #]
目次

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[Date]1993/7/26
[Paper #]
The evaluation of silicon nitride film deposited by photo-CVD

Yoshifumi Mori,  Yasushi Deguchi,  Yoshihiro Takahashi,  Kazunori Ohnishi,  

[Date]1993/7/26
[Paper #]SDM93-56
Enhanced liquid phase deposition SiO_2 films by electric field

Kenji Fukumitsu,  Nobuo Haneji,  

[Date]1993/7/26
[Paper #]SDM93-57
Ultra-thin oxynitride gate formed by oxidizing thermally-grown silicon nitride.

Takayuki Aoyama,  Tatsuya Yamazaki,  Toshihiro Sugii,  Takashi Ito,  

[Date]1993/7/26
[Paper #]SDM93-58
Evaluation of the charge distribution in the oxide of MOS structure before and after γ-ray radiation

Kouhei Okada,  Schunsaku Imaki,  Yoshihiro Takhashi,  Masato Yoshikawa,  Kazunori Ohnishi,  

[Date]1993/7/26
[Paper #]SDM93-59
Radiation Induced Structure Changes in Thermally Grown Silicon Dioxide Film

Yoshihiro Sugita,  Yasuo Nara,  Kei Horiuchi,  Takashi Ito,  

[Date]1993/7/26
[Paper #]SDM93-60
A superior method of eliminating B mode dielectric breakdown failure in gate oxides ulitizing a using charging phenomenon

Yukihiro Tominaga,  Akihiko Nara,  Takatoshi Ushikoshi,  Tsuneo Ajioka,  Hironori Kitabayashi,  

[Date]1993/7/26
[Paper #]SDM93-61
The Effect of High Voltage Stress on Poly Si MOSTFT

Alberto O. ADN,  Motoharu Arimura,  

[Date]1993/7/26
[Paper #]SDM93-62
HOT CARRIER RESISTANCE OF VERY-THIN GATE OXIDE FORMED BY ULTRACLEAN OXIDATION

Kou Nakamura,  Kohji Makihara,  Mizuho Morita,  Tadahiro Ohmi,  

[Date]1993/7/26
[Paper #]SDM93-63
THEORETICAL ANALYSIS ON HOT CARRIER GENERATION IN MOSFETs

Yasuhisa Omura,  

[Date]1993/7/26
[Paper #]SDM93-64
Interface-Trap Evaluation for Ultra-Thin Gate Oxide MOS Capacitors: Oxide Thickness Dependence of the Si-SiO_2 Interface-Trap Generation under -Bt Aging

Shigeo Ogawa,  Masakazu Shimaya,  Noboru Shiono,  

[Date]1993/7/26
[Paper #]SDM93-65
In-situ measurement of light emission in anodic oxidation process of Si

Guixi Zhou,  Yoichiro Nakanishi,  Yoshinori Hatanaka,  

[Date]1993/7/26
[Paper #]SDM93-66
Analysis of Mobility-Transconductance Enhancement in Double-Gate MOSFET

Hiroshi Inokawa,  Tetsushi Sakai,  

[Date]1993/7/26
[Paper #]SDM93-67
DEPENDENCE OF CHANNEL MOBILITY IN MOSFET ON Si-SiO_2 INTERFACE MICROROUGHNESS

Kazuyuki Ohmi,  Takashi Futatsuki,  Koji Makihara,  Kazuma Yamamoto,  Tadahiro Ohmi,  

[Date]1993/7/26
[Paper #]SDM93-68
Electromigration Testing of Giant-Grain Copper Interconnects under Extremely Large Current Stress

Hisashi Yamada,  Tsukasa Hoshi,  Toshiyuki Takewaki,  Tadashi Shibata,  Tadahiro Ohmi,  Takahisa Nita,  

[Date]1993/7/26
[Paper #]SDM93-69
Gettering by carbon ion implantation

Toshio Ando,  Seiichi Isomae,  Kaori Kondo,  Yuuji Sugino,  Masao Tamura,  

[Date]1993/7/26
[Paper #]SDM93-70
The dielectric breakdown characteristics of thin gate oxide prepared by trans 1,2 dichloroethylene added oxidation

Kenji Yoneda,  Kenji Hagiwara,  Hiroshi Ohishi,  Yoshihiro Todokoro,  

[Date]1993/7/26
[Paper #]SDM93-71
[OTHERS]

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[Date]1993/7/26
[Paper #]