Electronics-Optoelectronics(Date:1997/01/16)

Presentation
表紙

,  

[Date]1997/1/16
[Paper #]
目次

,  

[Date]1997/1/16
[Paper #]
Characterization and Control of ZnSe/GaAs Hetrovalent Interface

Shiro Miwa,  Li Hsin Kuo,  Kozo Kimura,  Tetsuji Yasuda,  Akihiro Ohtake,  Takafumi Yao,  

[Date]1997/1/16
[Paper #]OPE96-129,LQE97-127
Fabrication and Optical Properties of ZnSe-based Multiple Quantum Wells and Quantum Wires

Shigeo Hayashi,  Yoshio Manabe,  Ichiro Tanahashi,  Takao Tohda,  

[Date]1997/1/16
[Paper #]OPE96-130,LQE97-128
Deep Defect Level Characteristics in II-VI and III-V Blue-Semiconductor Laser Materials

Koshi Ando,  Tsutomu Yamaguchi,  Hirohumi Kasada,  / /,  

[Date]1997/1/16
[Paper #]OPE96-131,LQE97-129
Characterization and growth of ZnMgSSe laser diode

H. Okuyama,  A. Ishibashi,  

[Date]1997/1/16
[Paper #]OPE96-132,LQE97-130
Thermodynamic Study of InGaN growth by MOVPE

Akinori Koukitu,  Hisashi Seki,  

[Date]1997/1/16
[Paper #]OPE96-133,LQE97-131
Nucleation Control of Bulk GaN grown by Sublimation Method

Satoshi KURAI,  Koichi WADA,  Katsushi NISHINO,  Shiro SAKAI,  

[Date]1997/1/16
[Paper #]OPE96-134,LQE97-132
MOVPE Growth and Characterization of InGaN

Yasutoshi Kawaguchi,  Masaya Shimizu,  Kazumasa Hiramatsu,  Nobuhiko Sawaki,  

[Date]1997/1/16
[Paper #]OPE96-135,LQE97-133
Growth of GaN nano-structure and shutter control of AI content in AIGaN grown by RF-MBE

Masashi MORI,  Masaki YOSHIZAWA,  Nobuhiko FUJITA,  Akihiko KIKUCHI,  Katsumi KISHINO,  

[Date]1997/1/16
[Paper #]OPE96-136,LQE97-134
Design and Fabrication Processes Consideration of GaN-Based Surface Emitting Lasers

Tohru HONDA,  Koji SAOTOME,  Tomoe SHIRASAWA,  Miyuki MORI,  Nobuaki MOCHIDA,  Akira INOUE,  Takahiro SAKAGUCHI,  Fumio KOYAMA,  Kenichi IGA,  

[Date]1997/1/16
[Paper #]OPE96-137,LQE97-135
Structural and optical properties of group-III nitride based heterostructure

H. Amano,  T. Takeuchi,  S. Sota,  H. Sakai,  I. Akasaki,  

[Date]1997/1/16
[Paper #]OPE96-138,LQE97-136
[OTHERS]

,  

[Date]1997/1/16
[Paper #]