Electronics-Microwaves(Date:2023/01/27)

Presentation
Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier

Yuki Nakagawa(Shonan Inst. Tech.),  Takana Kaho(Shonan Inst. Tech.),  Shuichi Sakata(MELCO),  Yuji Komatsuzaki(MELCO),  Koji Yamanaka(MELCO),  

[Date]2023-01-27
[Paper #]ED2022-89,MW2022-148
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters

Shogo Morokuma(Saga Univ.),  Tomohiro Otsuka(Mitsubishi Electric),  Toshiyuki Oishi(Saga Univ.),  Yutaro Yamaguchi(Mitsubishi Electric),  Shintaro Shinjo(Mitsubishi Electric),  Koji Yamanaka(Mitsubishi Electric),  

[Date]2023-01-27
[Paper #]ED2022-91,MW2022-150
Design of Parasitic-Element Loaded Wideband Filtering Antenna with Unidirectional Radiation Pattern over 30% Frequency Bandwidth

Ken Sakiyama(Saitama Univ.),  Masataka Ohira(Saitama Univ.),  Zhewang Ma(Saitama Univ.),  

[Date]2023-01-27
[Paper #]ED2022-87,MW2022-146
A Calibration method for RF Spectrum Regeneration Using Direct RF Undersampling at Different Sampling Frequency Multi-path

Takashi Shiba(Tohoku Univ.),  Tomoyuki Furuichi(Tohoku Univ.),  Noriharu Suematsu(Tohoku Univ.),  

[Date]2023-01-27
[Paper #]ED2022-86,MW2022-145
[Invited Talk] Microwave Semiconductor Devices and Circuits for Industrial Innovation

Kazuhiko Honjo(UEC),  

[Date]2023-01-27
[Paper #]ED2022-97,MW2022-156
Stress Evaluation of Electroless Ni-P plating films on GaAs substrate

Koichiro Nishizawa(Mitsubishi Electric),  Ayumu Matsumoto(Univ. of Hyogo),  Yasuyuki Nakagawa(Mitsubishi Electric),  Hitoshi Sakuma(Mitsubishi Electric),  Seiki Goto(Mitsubishi Electric),  Naoki Fukumuro(Univ. of Hyogo),  Shinji Yae(Univ. of Hyogo),  

[Date]2023-01-27
[Paper #]ED2022-92,MW2022-151
Over 600W Ultra High Power X-Band IM-FET Utilized non-Uniform Comb Lines for Stabilization

Eigo Kuwata(MELCO),  Takumi Sugitani(MELCO),  Takashi Yamasaki(MELCO),  Yoshitaka Kamo(MELCO),  Shintaro Shinjo(MELCO),  

[Date]2023-01-27
[Paper #]ED2022-90,MW2022-149
[Invited Talk] Requierements for sharing type 4G/5G base station transciever amplifiers

Koji Yamanaka(Mitsubishi Electric),  Yuji Komatsuzaki(Mitsubishi Electric),  Shuichi Sakata(Mitsubishi Electric),  Kento Saiki(Mitsubishi Electric),  Takana Kaho(SIT),  

[Date]2023-01-27
[Paper #]ED2022-96,MW2022-155
[Invited Talk] Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application

Koji Matsunaga(SIT),  

[Date]2023-01-27
[Paper #]ED2022-95,MW2022-154
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT

Takuma Nanjo(Mitsubishi Electric),  Tomohiro Shinagawa(Mitsubishi Electric),  Tatsuro Watahiki(Mitsubishi Electric),  Naruhisa Miura(Mitsubishi Electric),  Masayuki Furuhashi(Mitsubishi Electric),  Kazuyasu Nishikawa(Mitsubishi Electric),  Takashi Egawa(NITech),  

[Date]2023-01-27
[Paper #]ED2022-93,MW2022-152
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network

Shigeki Yoshida(SEI),  Kozo Makiyama(SEI),  Akihiro Hayasaka(SEI),  Isao Makabe(SEI),  Ken Nakata(SEI),  

[Date]2023-01-27
[Paper #]ED2022-94,MW2022-153
A Reinforcement Learning Approach Enabling Automatic Microstrip BPF Design for Multiple Specifications

Yuto Asai(Saitama Univ.),  Masataka Ohira(Saitama Univ.),  Zhewang Ma(Saitama Univ.),  

[Date]2023-01-27
[Paper #]ED2022-88,MW2022-147