Electronics-Microwaves(Date:2017/01/26)

Presentation
[Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs

Kozo Makiyama(Fujitsu),  Yoshitaka Niida(Fujitsu),  Shiro(Fujitsu),  Toshihiro Ohki(Fujitsu),  Naoya Okamoto(Fujitsu),  Yuichi Minoura(Fujitsu),  Masaru Sato(Fujitsu),  Youichi Kamata(Fujitsu),  Kazukiyo Jpshin(Fujitsu),  Keiji Watanabe(Fujitsu),  Yasuyuki Miyamoto(Tokyo Tech.),  

[Date]2017-01-26
[Paper #]ED2016-98,MW2016-174
[Invited Lecture] Characterization of Metal/GaN Schottky Contacts

Kenji Shiojima(Univ. of Fukui),  

[Date]2017-01-26
[Paper #]ED2016-101,MW2016-177
[Invited Lecture] Commercialization of GaN-HEMT for High Frequency Application

Yasunori Tateno(Sumitomo Electric),  

[Date]2017-01-26
[Paper #]ED2016-97,MW2016-173
[Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices

Yohei Otoki(SCIOCS),  

[Date]2017-01-26
[Paper #]ED2016-100,MW2016-176
[Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications

Tetsuzo Ueda(Panasonic),  Yasuhiro Uemoto(Panasonic),  Hiroyuki Sakai(Panasonic),  Tsuyoshi Tanaka(Panasonic),  Daisuke Ueda(Kyoto Insutitute of Tech.),  

[Date]2017-01-26
[Paper #]ED2016-96,MW2016-172
[Invited Lecture] Towards Realization of GaN Vertical Power Devices

Jun Suda(Kyoto Univ.),  

[Date]2017-01-26
[Paper #]ED2016-99,MW2016-175
C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network

Eigo Kuwata(Mitsubishi Electric),  Atsuo Sugimoto(Mitsubishi Electric),  Hidetoshi Koyama(Mitsubishi Electric),  Yoshitaka Kamo(Mitsubishi Electric),  Ryota Komaru(Mitsubishi Electric),  Koji Yamanaka(Mitsubishi Electric),  

[Date]2017-01-27
[Paper #]ED2016-110,MW2016-186
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology

Yoshifumi Kawamura(Mitsubishi Electric),  Masatake Hangai(Mitsubishi Electric),  Tomohiro Mizutani(Mitsubishi Electric),  Kenichi Tomiyama(Mitsubishi Electric),  Koji Yamanaka(Mitsubishi Electric),  

[Date]2017-01-27
[Paper #]ED2016-111,MW2016-187
A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter

Jun Kamioka(Mitsubishi Electric Corp.),  Masatake Hangai(Mitsubishi Electric Corp.),  Kazuhiko Nakahara(Mitsubishi Electric Corp.),  Hiroyuki Okazaki(Mitsubishi Electric Corporation),  Koji Yamanaka(Mitsubishi Electric Corp.),  

[Date]2017-01-27
[Paper #]ED2016-109,MW2016-185
Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator

Toshiki Miyazaki(Saitama Univ.),  Masataka Ohira(Saitama Univ.),  Zhewag Ma(Saitama Univ.),  Xiaolong Wang(Saitama Univ.),  

[Date]2017-01-27
[Paper #]ED2016-104,MW2016-180
Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates

Yutaro Yamaguchi(Mitsubishi Electric corp.),  Shintaro Shinjo(Mitsubishi Electric corp.),  Koji Yamanaka(Mitsubishi Electric corp.),  Toshiyuki Oishi(Saga univ.),  

[Date]2017-01-27
[Paper #]ED2016-107,MW2016-183
An X-band Low Loss/High Power SPST Switch Using GaN on Si

Ryota Komaru(Mitsubishi Electric),  Masatake Hangai(Mitsubishi Electric),  Kazuhiko Nakahara(Mitsubishi Electric),  Hiroyuki Okazaki(Mitsubishi Electric),  Koji Yamanaka(Mitsubishi Electric),  

[Date]2017-01-27
[Paper #]ED2016-106,MW2016-182
Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation

Toshiyuki Oishi(Saga univ.),  Yutaro Yamaguchi(Mitsubishi Electric corp.),  Koji Yamanaka(Mitsubishi Electric corp.),  

[Date]2017-01-27
[Paper #]ED2016-108,MW2016-184
Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators

Ru Zhang(Saitama Univ.),  Zhewang Ma(Saitama Univ.),  Masataka Ohira(Saitama Univ.),  Xiaolong Wan(Saitama Univ.),  Chun-Ping Chen(Kanagawa Univ.),  Tetsuo Anada(Kanagawa Univ.),  

[Date]2017-01-27
[Paper #]ED2016-105,MW2016-181
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes

Tsuyoshi Takahashi(Fujitsu Labs.),  Masaru Sato(Fujitsu Labs.),  Shoichi Shiba(Fujitsu Labs.),  Yasuhiro Nakasha(Fujitsu Labs.),  Naoki Hara(Fujitsu Labs.),  Taisuke Iwai(Fujitsu Labs.),  Naoya Okamoto(Fujitsu Labs.),  Keiji Watanabe(Fujitsu Labs.),  

[Date]2017-01-27
[Paper #]ED2016-102,MW2016-178
Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks

Kazuto Ohsawa(Tokyo Tech),  Shinji Noguchi(Tokyo Tech),  Seiko Netsu(Tokyo Tech),  Nobukazu Kise(Tokyo Tech),  Yasuyuki Miyamoto(Tokyo Tech),  

[Date]2017-01-27
[Paper #]ED2016-103,MW2016-179