Electronics-Microwaves(Date:2011/01/06)

Presentation
表紙

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[Date]2011/1/6
[Paper #]
目次

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[Date]2011/1/6
[Paper #]
The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission

Masakazu HORI,  Kosuke ISONO,  Hirohumi NOJI,  Yasuhiro SHIBUYA,  Shigeo KAWASAKI,  

[Date]2011/1/6
[Paper #]ED2010-175,MW2010-135
A Study on GaAs-HBT MMIC Couplers with Feedback Circuit Techniques

Kazuya YAMAMOTO,  Hitoshi KURUSU,  Miyo MIYASHITA,  Satoshi SUZUKI,  Akira INOUE,  

[Date]2011/1/6
[Paper #]ED2010-176,MW2010-136
Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate

Takeshi YUASA,  Yukihiro TAHARA,  Tetsu OHWADA,  Naofumi YONEDA,  

[Date]2011/1/6
[Paper #]ED2010-177,MW2010-137
Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities

Yuki NAKAJIMA,  Suguru IMAI,  Kenji TAGUCHI,  Tatsuya KASHIWA,  Toshihide KITAZAWA,  Masahiro SUZUKI,  Kan-ichi FUJII,  

[Date]2011/1/6
[Paper #]ED2010-178,MW2010-138
Broadband High Efficiency Class-E GaN HEMT Amplifier

Koji YAMANAKA,  Norihiro YUNOUE,  Shin CHAKI,  Masatoshi NAKAYAMA,  Yoshihito HIRANO,  

[Date]2011/1/6
[Paper #]ED2010-179,MW2010-139
A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems

Munehiko NAGATANI,  Hideyuki NOSAKA,  Shogo YAMANAKA,  Kimikazu SANO,  Koichi MURATA,  

[Date]2011/1/6
[Paper #]ED2010-180,MW2010-140
32-GHz Phase Shifter IC with 810° control range

Hideyuki NOSAKA,  Munehiko NAGATANI,  Kimikazu SANO,  Koichi MURATA,  

[Date]2011/1/6
[Paper #]ED2010-181,MW2010-141
Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure

M. Tajima,  T. Hashizume,  

[Date]2011/1/6
[Paper #]ED2010-182,MW2010-142
Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs

Hiraku ONODERA,  Atsushi NAKAJIMA,  Kazushige HORIO,  

[Date]2011/1/6
[Paper #]ED2010-183,MW2010-143
Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate

Hidekazu Umeda,  Asamira Suzuki,  Yoshiharu Anda,  Masahiro Ishida,  Tetsuzo Ueda,  Tsuyoshi Tanaka,  Daisuke Ueda,  

[Date]2011/1/6
[Paper #]ED2010-184,MW2010-144
AlGaN/GaN HFETs using highly C-doped layers on Si substrate

Takuya Kokawa,  Syusuke Kaya,  Nariaki Ikeda,  Sadahiro Kato,  

[Date]2011/1/6
[Paper #]ED2010-185,MW2010-145
Developing GaN HEMTs for Ka-Band with 20W

Keiichi MATSUSHITA,  Hiroyuki SAKURAI,  Yasushi KASHIWABARA,  Kazutoshi MASUDA,  Kan ONODERA,  Hisao KAWASAKI,  Kazutaka TAKAGI,  Yoshiharu TAKADA,  Kunio TSUDA,  

[Date]2011/1/6
[Paper #]ED2010-186,MW2010-146
Process dependence of MOS gate dielectric films on 3C-SiC-OI

Keisuke YOKOYAMA,  Hiroyuki NAKAMURA,  Motoi NAKAO,  Katsunori ONISHI,  

[Date]2011/1/6
[Paper #]ED2010-187,MW2010-147
III-V quantum well channel MOSFET with back electrode

Toru KANAZAWA,  Ryosuke TERAO,  Yutaro YAMAGUCHI,  Shunsuke IKEDA,  Yoshiharu YONAI,  Atsushi KATO,  Yasuyuki MIYAMOTO,  

[Date]2011/1/6
[Paper #]ED2010-188,MW2010-148
New Stacked Metal-Insulator-Metal Capacitor for Future InP-Based ICs Applications

Takuya TSUTSUMI,  Suehiro SUGITANI,  Kazumi NISHIMURA,  Minoru IDA,  

[Date]2011/1/6
[Paper #]ED2010-189,MW2010-149
A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Koh KANAYA,  Hirotaka AMASUGA,  Yoshitsugu YAMAMOTO,  Naoki KOSAKA,  Shinichi MIYAKUNI,  Seiki GOTO,  Akihiro SHIMA,  

[Date]2011/1/6
[Paper #]ED2010-190,MW2010-150
A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs

Yasufumi KAWAI,  Shinji UJITA,  Takeshi FUKUDA,  Hiroyuki SAKAI,  Tetsuzo UEDA,  Tsuyoshi TANAKA,  

[Date]2011/1/6
[Paper #]ED2010-191,MW2010-151
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[Date]2011/1/6
[Paper #]
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