Electronics-Microwaves(Date:2005/01/11)

Presentation
表紙

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[Date]2005/1/11
[Paper #]
目次

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[Date]2005/1/11
[Paper #]
350V/150A AlGaN/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure

Masahiro HIKITA,  Manabu YANAGIHARA,  Kazushi NAKAZAWA,  Hiroaki UENO,  Yutaka HIROSE,  Tetsuzo UEDA,  Yasuhiro UEMOTO,  Tsuyoshi TANAKA,  Daisuke UEDA,  Takashi EGAWA,  

[Date]2005/1/11
[Paper #]ED2004-212,MW2004-219
Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure

Narihiko MAEDA,  Chengxin WANG,  Takashi MAKIMURA,  Masanobu HIROKI,  Toshiki MAKIMOTO,  Takashi KOBAYASHI,  Takatomo ENOKI,  

[Date]2005/1/11
[Paper #]ED2004-213,MW2004-220
Source resistance reduction of AlGaN/GaN HFETs with novel superlattice cap layer

Tomohiro MURATA,  Masahiro HIKITA,  Yutaka HIROSE,  Kaoru INOUE,  Yasuhiro UEMOTO,  Tsuyoshi TANAKA,  Daisuke UEDA,  

[Date]2005/1/11
[Paper #]ED2004-214,MW2004-221
Investigation on thermal design of high output power AlGaN/GaN-HEMT

Masanori ITOH,  Katsuaki KAIFU,  Juro MITA,  Hideyuki OKITA,  Fumihiko TODA,  Yoshiaki SANO,  Shohei SEKI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2005/1/11
[Paper #]ED2004-215,MW2004-222
A High Reliability GaN HEMT with SiN Passivation by Cat-CVD

Tetsuo KUNII,  Masahiro TOTSUKA,  Yoshitaka KAMO,  Yoshitsugu YAMAMOTO,  Hideo TAKEUCHI,  Yoshiharu SHIMADA,  Toshihiko SHIGA,  Hiroyuki MINAMI,  Toshiaki KITANO,  Shinichi MIYAKUNI,  Shigenori NAKATSUKA,  Akira INOUE,  Tomoki OKU,  Takuma NANJO,  Toshiyuki OISHI,  Takahide ISHIKAWA,  Yoshio MATSUDA,  

[Date]2005/1/11
[Paper #]ED2004-216,MW2004-223
Recessed Ohmic AlGaN/AlN/GaN HEMTs Grown on 100-mm-diam Epitaxial AlN/Sapphire Templates

Makoto MIYOSHI,  Atsushi IMANISHI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  Kei-ichiro ASAI,  Tomohiko SHIBATA,  Mitsuhiro TANAKA,  Osamu ODA,  

[Date]2005/1/11
[Paper #]ED2004-217,MW2004-224
Excess leakage currents in AlGaN Schottky interfaces

Tamotsu Hashizume,  Masamitsu Kaneko,  

[Date]2005/1/11
[Paper #]ED2004-218,MW2004-225
5 W-1.9 GHz-SPDT Switch Using AlGaN/GaN HEMTs

Mayumi Hirose,  Yoshiharu Takada,  Masahiko Kuraguchi,  Tadahiro Sasaki,  Takashi Suzuki,  Kunio Tsuda,  

[Date]2005/1/11
[Paper #]ED2004-219,MW2004-226
AlGaN/GaN HEMT Power Amplifier on a Conductive N-SiC Substrate

Masahito KANAMURA,  Toshihide KIKKAWA,  Kazukiyo JOSHIN,  

[Date]2005/1/11
[Paper #]ED2004-220,MW2004-227
Double-recessed 0.1-μm-gate pseudomorphic InP-HEMTs

Koji OGIKUBO,  Tomoyuki OHSHIMA,  Masanori TSUNOTANI,  Toshihiko ICHIOKA,  

[Date]2005/1/11
[Paper #]ED2004-221,MW2004-228
A 5.5GHz, 25W GaAs Power-FET chip at 26V operation

A. Maekawa,  T. Yamamoto,  K. Inoue,  T. Igarashi,  S. Sano,  S. Takase,  

[Date]2005/1/11
[Paper #]ED2004-222,MW2004-229
A 10-Gbit/s CMOS Burst-Mode Clock and Data Recovery IC for High-Speed Access Networks

Shunji KIMURA,  Masafumi NOGAWA,  Kazuyoshi NISHIMURA,  Tomoaki YOSHIDA,  Kiyomi KUMOZAKI,  Susumu NISHIHARA,  Yusuke OHTOMO,  

[Date]2005/1/11
[Paper #]ED2004-223,MW2004-230
A 90-GHz InP-HEMT Lossy Match Amplifier with a 20-dB Gain Using a Broadband Matching Technique

Yusuke INOUE,  Masaru SATO,  Toshihiro OHKI,  Kozo MAKIYAMA,  Tsuyoshi TAKAHASHI,  Hisao SHIGEMATSU,  Tatsuya HIROSE,  

[Date]2005/1/11
[Paper #]ED2004-224,MW2004-231
C-band 80 W Output Power Amplifier for Satellite Communication Systems

Akio WAKEJIMA,  Takahiro ASANO,  Takafumi HIRANO,  Masahiro FUNABASHI,  Kohji MATSUNAGA,  

[Date]2005/1/11
[Paper #]ED2004-225,MW2004-232
An InGaP/GaAs HBT MMIC Low-Noise Amplifier for 5-GHz-Band Wireless Applications

Kazuya YAMAMOTO,  Satoshi SUZUKI,  Nobuyuki OGAWA,  Kenichiro CHOMEI,  Teruyuki SHIMURA,  Kosei MAEMURA,  

[Date]2005/1/11
[Paper #]ED2004-226,MW2004-233
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[Date]2005/1/11
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