Electronics-Microwaves(Date:1999/01/22)

Presentation
表紙

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[Date]1999/1/22
[Paper #]
目次

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[Date]1999/1/22
[Paper #]
E-mode GaAs HJFET for Power Amplifier MMIC of Handy Phones

Sadayoshi Yoshida,  Yoshiaki Wakabayashi,  Kazuyoshi Uemura,  

[Date]1999/1/22
[Paper #]ED98-213,MW98-176,ICD98-280
Gate Current Path Optimized E-Mode FET Structure with High Drain Current Density and High Gate-turn-on Voltage

Naoki Hara,  Yasuhiro Nakasha,  Masaki Nagahara,  Kazukiyo Joshin,  Yuu Watanabe,  Masahiko Takikawa,  

[Date]1999/1/22
[Paper #]ED98-214,MW98-177,ICD98-281
Low Volatge Operation Power Heterojunction FET with Low on-resistance for Personal Digital Cellular Phones

Takehiko Kato,  Yasunori Bito,  Naotaka Iwata,  

[Date]1999/1/22
[Paper #]ED98-215,MW98-178,ICD98-282
An X-Band Power MMIC Amplifier with Buried-Plated-Heat-Sink Transistors

Yoshihiro TSUKAHARA,  Yoshinobu SASAKI,  Tetsuo KUNII,  Katsuya KOSAKI,  Kenji HOSOGI,  Yasunori OKUDA,  Hajime KAWANO,  Takahide ISHIKAWA,  Yasuo MITSUI,  

[Date]1999/1/22
[Paper #]ED98-216,MW98-179,ICD98-283
A 100W AlGaAs/GaAs Hetero-structure FET for Base Stations of Wireless Personal Communications

S. Goto,  K. Fujii,  T. Kunii,  S. Suzuki,  N. Yoshida,  S. Sakamoto,  K. Fujioka,  N. Tanino,  

[Date]1999/1/22
[Paper #]ED98-217,MW98-180,ICD98-284
35V Operation High Power AlGaAs/GaAs HFET with a Field-Modulating Plate

K. Asano,  Y. Miyoshi,  K. Ishikura,  Y. Nashimoto,  M. Kuzuhara,  M. Mizuta,  

[Date]1999/1/22
[Paper #]ED98-218,MW98-181,ICD98-285
A Quasi-SOI Power MOSFET Fabricated by Reversed Silicon Wafer Direct Bonding for Radio Frequency Applications

Satoshi Matsumoto,  Toshihiko Ishiyama,  Yasushi Hiraoka,  Tatsuo Sakai,  Toshiaki Yachi,  Hideki Kamitsuna,  Masahiro Muraguchi,  

[Date]1999/1/22
[Paper #]ED98-219,MW98-182,ICD98-286
[OTHERS]

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[Date]1999/1/22
[Paper #]