Electronics-Microwaves(Date:1998/01/22)

Presentation
表紙

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[Date]1998/1/22
[Paper #]
目次

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[Date]1998/1/22
[Paper #]
Large-signal Microwave Characteristics of Resonant-tunneling High Electron Mobility Transistors

Hiroyuki Fukuyama,  Koichi Maezawa,  Masafumi Yamamoto,  Hiroshi Okazaki,  Tadao Nakagawa,  Masahiro Muraguchi,  

[Date]1998/1/22
[Paper #]MW97-142
InGaP/GaAs HBT's Fabricated Using WSi/Ti as the Base Electrode and Burying SiO_2 in the Extrinsic Collector

Tohru Oka,  Koji Hirata,  Kiyoshi Ouchi,  Hiroyuki Uchiyama,  Kazuhiro Mochizuki,  Tohru Nakamura,  

[Date]1998/1/22
[Paper #]MW97-143
A 0.1μm Double-Deck-Shaped (DDS) Gate GaAs-HJFET

Shigeki Wada,  Jin Yamazaki,  Masaoki Ishikawa,  Tadashi Maeda,  

[Date]1998/1/22
[Paper #]MW97-144
An AlN/GaN Insulated Gate Heterostructure Field Effect Transistor ; IG-HFET Simulations and Prototype Device Fabrication

Hiroji Kawai,  Masaki Hara,  Fumihiko Nakamura,  syunji Imanaga,  

[Date]1998/1/22
[Paper #]MW97-145
High-Performance 19GHz-Band GaAs FET Switches Using LOXI (Layered-Oxide-Isolation)-MESFETs

Atsushi Kanda,  Satoshi Kodama,  Tomofumi Furuta,  Takumi Nittono,  Tadao Ishibashi,  Masahiro Muraguchi,  

[Date]1998/1/22
[Paper #]MW97-146
Ku-band High Power Amplifier Using Power Divider/Combiner with Asymmetric Structure

Yukinobu Tarui,  Akira Tsuchiko,  Hiromitsu Utumi,  Seiichi Tsuji,  Yasushi Itoh,  

[Date]1998/1/22
[Paper #]MW97-147
Ka-Band Low-Noise MMIC Amplifier with Multi-stage Source Inductors

Hiromitsu Uchida,  Sumire Takatsu,  Kazuhiko Nakahara,  Takeshi Ohshima,  Yasushi Itoh,  

[Date]1998/1/22
[Paper #]MW97-148
Evaluation of microstrip lines using an Electro-Optic Probe

Hitoshi ISHIDA,  Yoichi KAWAKAMI,  Hironori TAKAHASHI,  Toshikazu SEKIMOTO,  

[Date]1998/1/22
[Paper #]MW97-149
[OTHERS]

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[Date]1998/1/22
[Paper #]