Electronics-Lasers and Quantum Electronics(Date:2019/11/21)

Presentation
Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors

Kaoru Oda(Meijo Univ.),  Ryosuke Iida(Meijo Univ.),  Sho Iwayama(Meijo Univ.),  Kazuki Kiyohara(Meijo Univ.),  Tetsuya Takeuci(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Isamu Akasaki(Meijo Univ./Nagoya Univ.),  

[Date]2019-11-21
[Paper #]ED2019-46,CPM2019-65,LQE2019-89
Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG

Kai Matsuhisa(Shizuoka Univ.),  Yuto Kobayashi(Shizuoka Univ.),  Hiroki Ishihara(Shizuoka Univ.),  Mako Sugiura(Shizuoka Univ.),  Atsushi Sugita(Shizuoka Univ.),  Yoku Inoue(Shizuoka Univ.),  Takayuki Nakano(Shizuoka Univ./R.I.E shizuoka),  

[Date]2019-11-21
[Paper #]ED2019-42,CPM2019-61,LQE2019-85
AlGaN-based electron beam excitation UV lasers using AlGaN well layer

Yusuke Sakuragi(Meijo University),  Shinji Yasue(Meijo University),  Shohei Teramura(Meijo University),  Yuya Ogino(Meijo University),  Syunya Tanaka(Meijo University),  Sho Iwayama(Meijo University),  Motoaki Iwaya(Meijo University),  Satoshi Kamiyama(Meijo University),  Tetsuya Takeuchi(Meijo University),  Iwamu Akasaki(Meijo University),  HIdeto Miyake(Mie University),  

[Date]2019-11-21
[Paper #]ED2019-43,CPM2019-62,LQE2019-86
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD

Shunichi Yokoi(Nagoya Inst. of Tech.),  Keita Furuoka(Nagoya Inst. of Tech.),  Toshiharu Kubo(Nagoya Inst. of Tech.),  Takashi Egawa(Nagoya Inst. of Tech.),  

[Date]2019-11-21
[Paper #]ED2019-41,CPM2019-60,LQE2019-84
Photocatalyst properties of ZnO modified by electrochemical treatment

Koji Abe(Nitech),  Atsuhito Otake(Nitech),  

[Date]2019-11-21
[Paper #]ED2019-37,CPM2019-56,LQE2019-80
Optical properties of ZnO crystals grown by a mist CVD techniques with high temperature

Kosei Ohashi(Shizuoka Univ.),  Kenya Fujiwara(Shizuoka Univ.),  Mikihiro Yamamoto(Shizuoka Univ.),  Kazuhiko Hara(Shizuoka Univ.),  Masaru Sakai(Univ. of Yamanashi),  Tetsuya Kouno(Shizuoka Univ.),  

[Date]2019-11-21
[Paper #]ED2019-34,CPM2019-53,LQE2019-77
Investigation of flat thin film growth conditions in ALD growth of ZnO

Ryo Yamamoto(Shizuoka Univ.),  Hiroto Kano(Shizuoka Univ.),  Atsushi Nakamura(Shizuoka Univ.),  Wataru Inami(Shizuoka Univ.),  

[Date]2019-11-21
[Paper #]ED2019-33,CPM2019-52,LQE2019-76
Operation and load resistance dependence of RF-DC conversion circuits using Ga2O3 Schottky barrier diodes

Makoto Hashikawa(Saga Univ.),  Kosuke Urata(Saga Univ.),  Takumi Takenohata(Saga Univ.),  Kosuke Ajiro(Saga Univ.),  Takayoshi Oshima(Saga Univ.),  Toshiyuki Oishi(Saga Univ.),  

[Date]2019-11-21
[Paper #]ED2019-38,CPM2019-57,LQE2019-81
Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD

Mizuki Yamanaka(Nagoya Inst. Tech.),  Makoto Miyoshi(Nagoya Inst. Tech.),  Takashi Egawa(Nagoya Inst. Tech.),  Narihito Okada(Yamaguchi Univ.),  Kazuyuki Tadatomo(Yamaguchi Univ.),  Tetsuya Takeuchi(Meijo Univ.),  

[Date]2019-11-21
[Paper #]ED2019-44,CPM2019-63,LQE2019-87
Growth, crystall and optical characterization of quaternary AlGaInN epitaxial films nearly lattice-matched to GaN

Hiroki Harada(Nagoya Inst. Tech.),  Makoto Miyoshi(Nagoya Inst. Tech.),  Takashi Egawa(Nagoya Inst. Tech.),  Tetsuya Takeuchi(Meijo Univ.),  

[Date]2019-11-21
[Paper #]ED2019-45,CPM2019-64,LQE2019-88
Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Layers by Chemical Bath Deposition

Kohdai Hamamoto(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Yutaka Furubayashi(Kochi Univ. Technol.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2019-11-21
[Paper #]ED2019-35,CPM2019-54,LQE2019-78
Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties

Tomoaki Terasako(Ehime Univ.),  Kohdai Hamamoto(Ehime Univ.),  Kenta Yamada(Ehime Univ.),  Shinichiro Kohda(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Yutaka Furubayashi(Kochi Univ. Technol.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2019-11-21
[Paper #]ED2019-36,CPM2019-55,LQE2019-79
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE

Shinji Yamada(Nagoya Univ./ULVAC),  Hideki Sakurai(Nagoya Univ./ULVAC),  Yamato Osada(ULVAC),  Toshiyuki Nakamura(ULVAC),  Ryuichiro Kamimura(ULVAC),  Jun Suda(Nagoya Univ.),  Tetsu Kachi(Nagoya Univ.),  

[Date]2019-11-21
[Paper #]ED2019-40,CPM2019-59,LQE2019-83
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure

Daimotsu Kato(Toshiba),  Yosuke Kajiwara(Toshiba),  Akira Mukai(Toshiba),  Hiroshi Ono(Toshiba),  Aya Shindome(Toshiba),  Jumpei Tajima(Toshiba),  Toshiki Hikosaka(Toshiba),  Masahiko Kuraguchi(Toshiba),  Shinya Nunoue(Toshiba),  

[Date]2019-11-21
[Paper #]ED2019-39,CPM2019-58,LQE2019-82
Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes

Mitsuru Funato(Kyoto Univ.),  Hirotsugu Kobayashi(Kyoto Univ.),  Yoichi Kawakami(Kyoto Univ.),  

[Date]2019-11-22
[Paper #]ED2019-54,CPM2019-73,LQE2019-97
Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer

Shunya Tanaka(Meijo Univ.),  Yuta Kawase(Meijo Univ.),  Kosuke Sato(Asahi-Kasei/Meijo Univ.),  Shinji Yasue(Meijo Univ.),  Shohei Teramura(Meijo Univ.),  Yuya Ogino(Meijo Univ.),  Sho Iwayama(Meijo Univ./Mie Univ.),  Motoaki Iwaya(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Isamu Akasaki(Meijo Univ./Akasaki Research Center, Nagoya Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2019-11-22
[Paper #]ED2019-55,CPM2019-74,LQE2019-98
Experimental study on the antireflection nanotexture for organic photovoltaics

Kenta Hiraga(Yamagata Univ.),  Shigeru Kubota(Yamagata Univ.),  Kensaku Kanomata(Yamagata Univ.),  Bashir Ahmmad(Yamagata Univ.),  Jun Mizuno(Waseda Univ.),  Fumihiko Hirose(Yamagata Univ.),  

[Date]2019-11-22
[Paper #]ED2019-48,CPM2019-67,LQE2019-91
Progress of UVC-LEDs using DC sputter AlN templates

Yosuke Mogami(RIKEN/Saitama Univ.),  Atsushi Osawa(SCREEN),  Kazuto Ozaki(SCREEN),  Yukitake Tanioka(SCREEN),  Atsushi Maeoka(SCREEN),  Yuri Itokazu(RIKEN/Saitama Univ.),  Masafumi Jo(RIKEN),  Noritoshi Maeda(RIKEN),  Hiroyuki Yaguchi(Saitama Univ.),  Hideki Hirayama(RIKEN),  

[Date]2019-11-22
[Paper #]ED2019-53,CPM2019-72,LQE2019-96
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells

Takashi Fujita(Kanazawa Inst. Tech.),  Shigeta Sakai(Kanazawa Inst. Tech.),  Yuma Ikeda(Kanazawa Inst. Tech.),  Atsushi A. Yamaguchi(Kanazawa Inst. Tech.),  Susumu Kusanagi(Sony),  Yuya Kanitani(Sony),  Yoshihiro Kudo(Sony),  Shigetaka Tomiya(Sony),  

[Date]2019-11-22
[Paper #]ED2019-56,CPM2019-75,LQE2019-99
Estimation of Internal Quantum Efficiency in InGaN Quantum Wells by Simultaneous Photoacoustic and Photoluminescence Measurements

Keito Mori(KIT),  Yuchi Takahashi(KIT),  Yuya Morimoto(KIT),  Atsushi A. Yamaguchi(KIT),  Susumu Kusanagi(SONY),  Yuya Kanitani(SONY),  Yoshihiro Kudo(SONY),  Shigetaka Tomiya(SONY),  

[Date]2019-11-22
[Paper #]ED2019-57,CPM2019-76,LQE2019-100
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