IEICE Technical Committee

Electronics-Lasers and Quantum Electronics(Date:2018/11/29)

Presentation

Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing

Yosuke Kajiwara(Toshiba Corp.), Aya Shindome(Toshiba Corp.), Toshiki Hikosaka(Toshiba Corp.), Masahiko Kuraguchi(Toshiba Corp.), Akira Yoshioka(Toshiba Electronic Device & Storage Corp.), Shinya Nunoue(Toshiba Corp.),

[Date]2018-11-29
[Paper #]ED2018-35,CPM2018-69,LQE2018-89

Experiment and evaluation for the methods of nanoimprinting moth eye structure

Kenta Hiraga(Yamagata Univ.), Shigeru Kubota(Yamagata Univ.), Kensaku Kanomata(Yamagata Univ.), Bashir Ahmmad(Yamagata Univ.), Fumihiko Hirose(Yamagata Univ.),

[Date]2018-11-29
[Paper #]ED2018-37,CPM2018-71,LQE2018-91

Recent progress toward realization of AlGaN deep UV LD

Noritohsi Maeda(RIKEN), Yoichi Yamada(Yamaguchi Univ.), Masafumi Jo(RIKEN), Hideki Hirayama(RIKEN),

[Date]2018-11-29
[Paper #]ED2018-34,CPM2018-68,LQE2018-88

Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells

Mitsuru Funato(Kyoto Univ.), Shuhei Ichikawa(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2018-11-29
[Paper #]ED2018-32,CPM2018-66,LQE2018-86

Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

Kenji Shiojima(Univ. of Fukui), Masataka Maeda(Univ. of Fukui), Tomoyoshi Mishima(Hosei Univ.),

[Date]2018-11-29
[Paper #]ED2018-36,CPM2018-70,LQE2018-90

Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures

Mizuki Yamanaka(Nagoya Inst. Tech), Makoto Miyoshi(Nagoya Inst. Tech), Takashi Egawa(Nagoya Inst. Tech), Tetsuya Takeuchi(Meijo Univ.),

[Date]2018-11-29
[Paper #]ED2018-33,CPM2018-67,LQE2018-87

Development and ion absorption characterization of the zeolite films on flexible film using atomic layer deposition

Yoshiharu Mori(Yamagata Univ.), Yusuke Noguti(Yamagata Univ.), Kensaku Kanomata(Yamagata Univ.), Masanori Miura(Yamagata Univ.), Bashir A. Arima(Yamagata Univ.), Shigeru Kubota(Yamagata Univ.), Fumihiko Hirose(Yamagata Univ.),

[Date]2018-11-29
[Paper #]ED2018-38,CPM2018-72,LQE2018-92

Enhanced efficiency of CdS quantum dot solar cell by photo electrode modification

Yuya Kibata(Yamagata Univ.), Masanori Miura(Yamagata Univ.), Kensaku Kanomata(Yamagata Univ.), Shigeru Kubota(Yamagata Univ.), Fumihiko Hirose(Yamagata Univ.), Bashir Ahmmad Arima(Yamagata Univ.),

[Date]2018-11-29
[Paper #]ED2018-39,CPM2018-73,LQE2018-93

Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell

Wen Ji(NIT), Masaya Ichimura(NIT),

[Date]2018-11-29
[Paper #]ED2018-40,CPM2018-74,LQE2018-94

Fabrication of p-NiO/n-ZnO transparent solar cells by electrochemical deposition

Miki Koyama(NIT), Masaya Ichimura(NIT),

[Date]2018-11-30
[Paper #]ED2018-45,CPM2018-79,LQE2018-99

Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures

Takashi Fujita(Kanazawa Inst. Tech.), Shigeta Sakai(Kanazawa Inst. Tech.), Yuma Ikeda(Kanazawa Inst. Tech.), Atsushi A. Yamaguchi(Kanazawa Inst. Tech.), Yuya Kanitani(Sony), Shigetaka Tomiya(Sony),

[Date]2018-11-30
[Paper #]ED2018-48,CPM2018-82,LQE2018-102

A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements

Itsuki Oshima(Kanazawa Inst. tec.), Yuma Ikeda(Kanazawa Inst. tec.), Shigeta Sakai(Kanazawa Inst. tec.), A. A. Yamaguchi(Kanazawa Inst. tec.), Yuya Kanitani(Sony), Shigetaka Tomiya(Sony),

[Date]2018-11-30
[Paper #]ED2018-49,CPM2018-83,LQE2018-103

Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties

Hideyuki Okada(Ehime Univ.), Tomoaki Terasako(Ehime Univ.), Kenji Gochoh(Ehime Univ.), Naoya Hayashimoto(Ehime Univ.),

[Date]2018-11-30
[Paper #]ED2018-43,CPM2018-77,LQE2018-97

Chemical Bath Deposition of ZnO Nanorods on GZO Seed Layers and Formation of PEDOT:PSS/ZnO Nanorods Heterojunctions

Shohei Obara(Ehime Univ.), Tomoaki Terasako(Ehime Univ.), Suguru Namba(Ehime Univ.), Naoto Hshikuni(Ehime Univ.), Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.), Junichi Nomoto(Kochi Univ. Tech.), Tetsuya Yamamoto(Kochi Univ. Tech.),

[Date]2018-11-30
[Paper #]ED2018-44,CPM2018-78,LQE2018-98

A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer

Daiki Hosomi(Nagoya Inst. of Tech.), Keita Furuoka(Nagoya Inst. of Tech.), Heng Chen(Nagoya Inst. of Tech.), Saki Saito(Nagoya Inst. of Tech.), Toshiharu Kubo(Nagoya Inst. of Tech.), Takashi Egawa(Nagoya Inst. of Tech.), Makoto Miyoshi(Nagoya Inst. of Tech.),

[Date]2018-11-30
[Paper #]ED2018-41,CPM2018-75,LQE2018-95

Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method

Masanari Umemura(Nagoya Inst. Tech.), Masaya Ichimura(Nagoya Inst. Tech.),

[Date]2018-11-30
[Paper #]ED2018-46,CPM2018-80,LQE2018-100

GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures

Iida Ryosuke(Meijo Univ.), Natsumi Hayashi(*), Wataru Muranaga(Meijo Univ.), Syo Iwayama(Meijo Univ.), Tetsuya Takeuchi(Meijo Univ.), Satoshi Kamiyama(Meijo Univ.), Motoaki Iwaya(Meijo Univ.), Isamu Akasaki(Meijo Univ./Nagoya Univ.),

[Date]2018-11-30
[Paper #]ED2018-47,CPM2018-81,LQE2018-101

Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs

Keita Furuoka(Nagoya Inst. of Tech.), Toshiharu Kubo(Nagoya Inst. of Tech.), Makoto Miyoshi(Nagoya Inst. of Tech.), Takashi Egawa(Nagoya Inst. of Tech.),

[Date]2018-11-30
[Paper #]ED2018-42,CPM2018-76,LQE2018-96

Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire

Ryo Fukuta(Mie Univ.), Kanako Shojiki(Mie Univ.), Jiang Nan(Mie Univ.), Kenjiro Uesugi(Mie Univ.), Yusuke Hayashi(Mie Univ.), Xiao Shiyu(Mie Univ.), Hideto Miyake(Mie Univ.),

[Date]2018-11-30
[Paper #]ED2018-50,CPM2018-84,LQE2018-104

Recent Progress towards realizing GaN/AlGaN Quantum Cascade Lasers

Ke Wang(RIKEN), Li Wang(RIKEN), Lin Tsung Tse(RIKEN), Hideki Hirayama(RIKEN),

[Date]2018-11-30
[Paper #]ED2018-51,CPM2018-85,LQE2018-105