Electronics-Lasers and Quantum Electronics(Date:2017/11/30)

Presentation
Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate

Tsukasa Kono(Nagoya Univ.),  Maki Kushimoto(Nagoya Univ.),  Kentaro Nagamatsu(Nagoya Univ.),  Shugo Nitta(Nagoya Univ.),  Yoshio Honda(Nagoya Univ.),  Hiroshi Amano(Nagoya Univ.),  

[Date]2017-11-30
[Paper #]ED2017-53,CPM2017-96,LQE2017-66
Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy

Kenji Shiojima(Univ. of Fukui),  Takanori Hashizume(Univ. of Fukui),  Masafumi Horikiri(SCIOCS),  Takeshi Tanaka(SCIOCS),  Tomoyoshi Mishima(Hosei Univ.),  

[Date]2017-11-30
[Paper #]ED2017-55,CPM2017-98,LQE2017-68
Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates

Kenji Shiojima(Univ. of Fukui),  Hiroyoshi Imadate(Univ. of Fukui),  Tomoyoshi Mishima(Hosei Univ.),  

[Date]2017-11-30
[Paper #]ED2017-56,CPM2017-99,LQE2017-69
A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy

Naoto Shimizu(Kanazawa Inst. of Tech.),  Yuchi Takahashi(Kanazawa Inst. of Tech.),  Genki Kobayashi(Kanazawa Inst. of Tech.),  Takashi Nakano(Kanazawa Inst. of Tech.),  Shigeta Sakai(Kanazawa Inst. of Tech.),  Atsusi A. Yamaguchi(Kanazawa Inst. of Tech.),  Yuya Kanitani(Sony),  Shigetaka Tomiya(Sony),  

[Date]2017-11-30
[Paper #]ED2017-49,CPM2017-92,LQE2017-62
Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs

Yusuke Ota(Kanazawa Inst. of Tech.),  Shigeta Sakai(Kanazawa Inst. of Tech.),  Atsushi A. Yamaguchi(Kanazawa Inst. of Tech.),  

[Date]2017-11-30
[Paper #]ED2017-50,CPM2017-93,LQE2017-63
Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices

Keisuke Uemura(Hokkaido Univ.),  Satoru Matsumoto(Hokkaido Univ.),  Masachika Toguchi(Hokkaido Univ.),  Keisuke Ito(Hokkaido Univ.),  Taketomo Sato(Hokkaido Univ.),  

[Date]2017-11-30
[Paper #]ED2017-54,CPM2017-97,LQE2017-67
Optical properties of AlGaN quantum wires formed on AlN with macrostep surface

Minehiro Hayakawa(Kyoto Univ.),  Yuki Hayashi(Kyoto Univ.),  Yuki Nagase(Kyoto Univ.),  Shuhei Ichikawa(Kyoto Univ.),  Kyosuke Kumamoto(Kyoto Univ.),  Mami Shibaoka(Kyoto Univ.),  Mitsuru Funato(Kyoto Univ.),  Yoichi Kawakami(Kyoto Univ.),  

[Date]2017-11-30
[Paper #]ED2017-52,CPM2017-95,LQE2017-65
Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells

Yuma Ikeda(Kanazawa Inst. of Tehc.),  Shigeta Sakai(Kanazawa Inst. of Tehc.),  Itsuki Oshima(Kanazawa Inst. of Tehc.),  Atsushi A. Yamaguchi(Kanazawa Inst. of Tehc.),  Yuya Kanitani(Sony),  Shigetaka Tomiya(Sony),  

[Date]2017-11-30
[Paper #]ED2017-51,CPM2017-94,LQE2017-64
A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition

Takuma Mori(Nagoya Inst. of Tech.),  Miki Ohta(Nagoya Inst. of Tech.),  Hiroki Harada(Nagoya Inst. of Tech.),  Shinya Kato(Nagoya Inst. of Tech.),  Makoto Miyoshi(Nagoya Inst. of Tech.),  Takashi Egawa(Nagoya Inst. of Tech.),  

[Date]2017-12-01
[Paper #]ED2017-57,CPM2017-100,LQE2017-70
Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures

NguyenXuan Truyen(Nagoya Univ.),  Noriyuki Taoka(AIST GaN OIL),  Akio Ohta(Nagoya Univ.),  Hisashi Yamada(AIST GaN OIL),  Tokio Takahashi(AIST GaN OIL),  Mitsuhisa Ikeda(Nagoya Univ.),  Katsunori Makihara(Nagoya Univ.),  Mitsuaki Shimizu(AIST GaN OIL),  Seiichi Miyazaki(Nagoya Univ.),  

[Date]2017-12-01
[Paper #]ED2017-61,CPM2017-104,LQE2017-74
Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress

Yuma Ishimatsu(Saga Univ.),  Kosuke Funaki(Saga Univ.),  Satoshi Masuya(Saga Univ.),  Kyosuke Miyazaki(Saga Univ.),  Takayoshi Oshima(Saga Univ.),  Makoto Kasu(Saga Univ.),  Toshiyuki Oishi(Saga Univ.),  

[Date]2017-12-01
[Paper #]ED2017-63,CPM2017-106,LQE2017-76
Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG

Yusuke Hayashi(Mie Univ.),  Hideto Miyake(Mie Univ.),  Kazumasa Hiramatsu(Mie Univ.),  Toru Akiyama(Mie Univ.),  Tomonori Ito(Mie Univ.),  Ryuji Katayama(Osaka Univ.),  

[Date]2017-12-01
[Paper #]ED2017-67,CPM2017-110,LQE2017-80
Homoepitaxial growth on sputtered AlN templates by MOVPE

Ryo Yoshizawa(Mie Univ.),  Yusuke Hayashi(Mie Univ.),  Hideto Miyake(Mie Univ.),  Kazumasa Hiramatsu(Mie Univ.),  

[Date]2017-12-01
[Paper #]ED2017-66,CPM2017-109,LQE2017-79
Two-step graded p-AlGaN structure for deep UV-LEDs

Hisanori Kojima(Meijo Univ.),  Toshiki Yasuda(Meijo Univ.),  Daiki Kanbayashi(Meijo Univ.),  Kazuyoshi Iida(Meijo Univ.),  Norikatsu Koide(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Isamu Akasaki(Meijo Univ.),  

[Date]2017-12-01
[Paper #]ED2017-59,CPM2017-102,LQE2017-72
Dye sensitized solar cells using zeolite coated TiO2 photonanodes

Takahiro Imai(Yamagata Univ.),  Yoshiharu Mori(Yamagata Univ.),  Masanori Miura(Yamagata Univ.),  Kensaku Kanomata(Yamagata Univ.),  Bashir Ahmmad(Yamagata Univ.),  Shigeru Kubota(Yamagata Univ.),  Fumihiko Hirose(Yamagata Univ.),  

[Date]2017-12-01
[Paper #]ED2017-69,CPM2017-112,LQE2017-82
Thermal annealing of semipolar AlN on m-plane sapphire

Masafumi Jo(RIKEN),  Satoshi Minami(RIKEN),  Hideki Hirayama(RIKEN),  

[Date]2017-12-01
[Paper #]ED2017-68,CPM2017-111,LQE2017-81
Two-step crystal growth of GaN nanowire by MOCVD

Kohei Sasai(Meijo Univ.),  Myunghee KIM(Meijo Univ.),  Atusi Suzuki(Meijo Univ.),  Hiroki Sibuya(Meijo Univ.),  Yuki Kurisaki(Meijo Univ.),  Kyohei Nokimura(Meijo Univ.),  Minoru Takebayasi(Meijo Univ.),  Satosi Kamiyama(Meijo Univ.),  Tetuya Takeuchi(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Isamu Akasaki(Meijo Univ.),  

[Date]2017-12-01
[Paper #]ED2017-65,CPM2017-108,LQE2017-78
Achievement of AlGaN deep-UV LED using photonic crystal(PhC)

Yukio Kashima(Marubun),  Noritoshi Maeda(RIKEN),  Eriko Matsuura(Marubun),  Masafumi Jo(RIKEN),  Takeshi Iwai(TOK),  Toshiro Morita(TOK),  Mitsunori Kokubo(TOSHIBA MACHINE),  Takaharu Tashiro(TOSHIBA MACHINE),  Ryuichiro Kamimura(ULVAC),  Yamato Osada(ULVAC),  Yuichi Kurashima(AIST),  Hideki Takagi(AIST),  Hideki Hirayama(RIKEN),  

[Date]2017-12-01
[Paper #]ED2017-60,CPM2017-103,LQE2017-73
Application of the FDTD Aglgorithm with Envelope Method to Optical Analysis of Organic Photovoltaics

Shigeru Kubota(Yamagata Univ.),  Kensaku Kanomata(Yamagata Univ.),  Bashir Ahmmad(Yamagata Univ.),  Jun Mizuno(Waseda Univ.),  Fumihiko Hirose(Yamagata Univ.),  

[Date]2017-12-01
[Paper #]ED2017-70,CPM2017-113,LQE2017-83
Improvement of PBTI reliability in GaN-MOSFETs

Yosuke Kajiwara(Toshiba),  Toshiya Yonehara(Toshiba),  Daimotsu Kato(Toshiba),  Kenjiro Uesugi(Toshiba),  Aya Shindome(Toshiba),  Masahiko Kuraguchi(Toshiba),  Akira Mukai(Toshiba),  Hiroshi Ono(Toshiba),  Miki Yumoto(Toshiba),  Akira Yoshioka(Toshiba),  Shinya Nunoue(Toshiba),  

[Date]2017-12-01
[Paper #]ED2017-62,CPM2017-105,LQE2017-75
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