IEICE Technical Committee

Electronics-Lasers and Quantum Electronics(Date:2016/12/12)

Presentation

Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates

Junji Kotani(Fujitsu Lab.), Atsushi Yamada(Fujitsu Lab.), Tetsuro Ishiguro(Fujitsu Lab.), Norikazu Nakamura(Fujitsu Lab.),

[Date]2016-12-12
[Paper #]ED2016-57,CPM2016-90,LQE2016-73

Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates

Kenji Shiojima(Univ. of Fukui), Moe Naganawa(Univ. of Fukui), Tomoyoshi Mishima(Hosei Univ.),

[Date]2016-12-12
[Paper #]ED2016-60,CPM2016-93,LQE2016-76

Evaluating Current Collapse of GaN HEMT devices by Carrier Number

Kohei Oasa(TOSHIBA), Akira Yoshioka(TOSHIBA), Yasunobu Saito(TOSHIBA), Takuo Kikuchi(TOSHIBA), Tatsuya Ohguro(TOSHIBA), Takeshi Hamamoto(TOSHIBA), Toru Sugiyama(TOSHIBA),

[Date]2016-12-12
[Paper #]ED2016-62,CPM2016-95,LQE2016-78

Normally-off operation of planar GaN MOS-HFET

Takuma Nanjo(Mitsubishi Electric), Tetsuro Hayashida(Mitsubishi Electric), Hidetoshi Koyama(Mitsubishi Electric), Akifumi Imai(Mitsubishi Electric), Akihiko Furukawa(Mitsubishi Electric), Mikio Yamamuka(Mitsubishi Electric),

[Date]2016-12-12
[Paper #]ED2016-63,CPM2016-96,LQE2016-79

Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy

Kenji Shiojima(Univ. of Fukui), Shingo Murase(Univ. of Fukui), Masataka Maeda(Univ. of Fukui), Tomoyoshi Mishima(Hosei Univ.),

[Date]2016-12-12
[Paper #]ED2016-58,CPM2016-91,LQE2016-74

Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process

Yusuke Kumazaki(Hokkaido Univ.), Keisuke Uemura(Hokkaido Univ.), Taketomo Sato(Hokkaido Univ.),

[Date]2016-12-12
[Paper #]ED2016-66,CPM2016-99,LQE2016-82

Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy

Kazutaka Kanegae(Kyoto Univ.), Mitsuaki Kaneko(Kyoto Univ.), Tsunenobu Kimoto(Kyoto Univ.), Masahiro Horita(Kyoto Univ.), Jun Suda(Kyoto Univ.),

[Date]2016-12-12
[Paper #]ED2016-61,CPM2016-94,LQE2016-77

Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes

Takuya Maeda(Kyoto Univ.), Masaya Okada(Sumitomo electric industries,Ltd.), Masaki Ueno(Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto(Sumitomo electric industries,Ltd.), Masahiro Horita(Kyoto Univ.), Jun Suda(Kyoto Univ.),

[Date]2016-12-12
[Paper #]ED2016-59,CPM2016-92,LQE2016-75

AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current

Yudai Suzuki(Univ.Fukui), Taisei Yamazaki(Univ.Fukui), Shinya Makino(Univ.Fukui), Joel T. Asubar(Univ.Fukui), Hirokuni Tokuda(Univ.Fukui), Masaaki Kuzuhara(Univ.Fukui),

[Date]2016-12-12
[Paper #]ED2016-64,CPM2016-97,LQE2016-80

Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate

Suzuki Atsuya(Univ. Fukui), Joel Asubar(Univ. Fukui), Tokuda Hirokuni(Univ. Fukui), Kuzuhara Masaaki(Univ. Fukui),

[Date]2016-12-12
[Paper #]ED2016-65,CPM2016-98,LQE2016-81

Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes

Keigo Matsuura(KIT), Shigeta Sakai(KIT), Atsushi A. Yamaguchi(KIT),

[Date]2016-12-13
[Paper #]ED2016-67,CPM2016-100,LQE2016-83

MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells

Takuma Mori(NIT), Makoto Miyoshi(NIT), Takashi Egawa(NIT),

[Date]2016-12-13
[Paper #]ED2016-68,CPM2016-101,LQE2016-84

Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates

Issei Oshima(RIKEN/Saitama Univ.), Masafumi Jo(RIKEN), Noritoshi Maeda(RIKEN), Norihiko Kamata(Saitama Univ.), Hideki Hirayama(RIKEN),

[Date]2016-12-13
[Paper #]ED2016-69,CPM2016-102,LQE2016-85

Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells

Yoshinobu Matsuda(Kyoto Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2016-12-13
[Paper #]ED2016-70,CPM2016-103,LQE2016-86

Crystal growth of bulk AlN by a clean process

Katsuhiro Kishimoto(Kyoto Univ.), Wu PeiTsen(Kyoto Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2016-12-13
[Paper #]ED2016-71,CPM2016-104,LQE2016-87

Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer

Takuya Mino(Panasonic), Hideki Hirayama(RIKEN), Takayoshi Takano(Panasonic), Koji Goto(Panasonic), Mitsuhiko Ueda(Panasonic), Kenji Tsubaki(Panasonic),

[Date]2016-12-13
[Paper #]ED2016-72,CPM2016-105,LQE2016-88

Fabrication of TiO2 channel TFTs using room temperature atomic layer deposition and their application to light sensor

Ko Kikuchi(Yamagata Univ), Masanori Miura(Yamagata Univ), Kensaku Kanomata(Yamagata Univ), Bashir Ahmmad(Yamagata Univ), Shigeru Kubota(Yamagata Univ), Fumihiko Hirose(Yamagata Univ),

[Date]2016-12-13
[Paper #]ED2016-75,CPM2016-108,LQE2016-91

Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip

Kazuaki Tsuchiyama(Toyohashi Tech.), Shu Utsuhomiya(Toyohashi Tech.), Shota Nakagawa(Toyohashi Tech.), Keisuke Yamane(Toyohashi Tech.), Hiroto Sekiguchi(Toyohashi Tech.), Hiroshi Okada(Toyohashi Tech.), Akihiro Wakahara(Toyohashi Tech.),

[Date]2016-12-13
[Paper #]ED2016-73,CPM2016-106,LQE2016-89

Optical design of organic solar cells using nanotexture and high-refractive-index glass

Shigeru Kubota(Yamagata Univ.), Yoshiki Harada(Yamagata Univ.), Takenori Sudo(Waseda Univ.), Kensaku Kanomata(Yamagata Univ.), Bashir Ahmmad(Yamagata Univ.), Jun Mizuno(Waseda Univ.), Fumihiko Hirose(Yamagata Univ.),

[Date]2016-12-13
[Paper #]ED2016-76,CPM2016-109,LQE2016-92

Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells

Takahiro Imai(Yamagata Univ.), Masanori Miura(Yamagata Univ.), Kensaku Kanomata(Yamagata Univ.), Bashir Ahmmad Arima(Yamagata Univ.), Shigeru Kubota(Yamagata Univ.), Fumihiko Hirose(Yamagata Univ.),

[Date]2016-12-13
[Paper #]ED2016-77,CPM2016-110,LQE2016-93