Electronics-Lasers and Quantum Electronics(Date:2014/11/20)

Presentation
表紙

,  

[Date]2014/11/20
[Paper #]
目次

,  

[Date]2014/11/20
[Paper #]
AlN Single Crystal Growth by means of Sublimation method

Yosuke IWASAKI,  Shunro NAGATA,  Hidetoshi AKIYAMA,  Keiichiro NAKAMURA,  

[Date]2014/11/20
[Paper #]ED2014-73,CPM2014-130,LQE2014-101
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO_4

Takuya OZAKI,  Mitsuru FUNATO,  Yoichi KAWAKAMI,  

[Date]2014/11/20
[Paper #]ED2014-74,CPM2014-131,LQE2014-102
Critical thickness for phase separation in MOVPE-grown thick InGaN

K. KODAMA,  Md Tanvir HASAN,  H. NOMURA,  N. SHIGEKAWA,  A. YAMAMOTO,  M. KUZUHARA,  

[Date]2014/11/20
[Paper #]ED2014-75,CPM2014-132,LQE2014-103
Effects of relaxation layer on AlGaN multiple quantum wells by LP-MOVPE

Kazuhiro Nakahama,  Fumitsugu Fukuyo,  Hideto Miyake,  Kazumasa Hiramatsu,  Harumasa Yoshida,  Yuji Kobayashi,  

[Date]2014/11/20
[Paper #]ED2014-76,CPM2014-133,LQE2014-104
Emission characteristics of InGaN-MQW structures on m-plane GaN substrates

Kaori KURIHARA,  Satoru NAGAO,  Atsushi A. YAMAGUCHI,  

[Date]2014/11/20
[Paper #]ED2014-77,CPM2014-134,LQE2014-105
Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells

Shigeta SAKAI,  Atsushi A. YAMAGUCHI,  Kaori KURIHARA,  Satoru NAGAO,  

[Date]2014/11/20
[Paper #]ED2014-78,CPM2014-135,LQE2014-106
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED

Yukio Kashima,  Eriko Matsuura,  Satoshi Shimatani,  Mitsunori Kokubo,  Takaharu Tashiro,  Takafumi Ookawa,  Ryuichiro Kamimura,  Yamato Osada,  Sachie Fujikawa,  Hideki Hirayama,  

[Date]2014/11/20
[Paper #]ED2014-79,CPM2014-136,LQE2014-107
Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography

M. Nambu,  A. A. Yamaguchi,  H. Goto,  H. Sunakawa,  T. Matsueda,  A. Okada,  H. Shinohara,  H. Goto,  J. Mizuno,  A. Usui,  

[Date]2014/11/20
[Paper #]ED2014-80,CPM2014-137,LQE2014-108
Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate

Yuuya KANAZAWA,  Shiro TOYODA,  Issei OHSHIMA,  Norihiko KAMATA,  Yukio KASHIMA,  Eriko MATSUURA,  Satoshi SHIMATANI,  Mitsunori KOKUBO,  Takaharu TASHIRO,  Takafumi OHKAWA,  Ryuichiro KAMIMURA,  Yamato OSADA,  Hideki HIRAYAMA,  

[Date]2014/11/20
[Paper #]ED2014-81,CPM2014-138,LQE2014-109
Hardness and Young's Modulus of InN

Yasushi OHKUBO,  Momoko DEURA,  Yuki TOKUMOTO,  Kentaro KUTSUKAKE,  Yutaka OHNO,  Ichiro YONENAGA,  

[Date]2014/11/20
[Paper #]ED2014-82,CPM2014-139,LQE2014-110
Relationship beween First-Principles Studies and Experimental Results of [(CaFeO_3)_m/(LaFeO_3)_n] Superlattices about an Electric and Magnetic Structure and Properties

Takahiro OIKAWA,  Yuta WATABE,  Takaaki INABA,  Keisuke OSHIMA,  Huaping SONG,  Tomoko NAGATA,  Hiroshi YAMAMOTO,  Nobuyuki IWATA,  

[Date]2014/11/20
[Paper #]ED2014-83,CPM2014-140,LQE2014-111
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7THz

Shiro TOYODA,  Wataru TERASHIMA,  Norihiko KAMATA,  Hideki HIRAYAMA,  

[Date]2014/11/20
[Paper #]ED2014-84,CPM2014-141,LQE2014-112
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure

Wataru TERASHIMA,  Hideki HIRAYAMA,  

[Date]2014/11/20
[Paper #]ED2014-85,CPM2014-142,LQE2014-113
A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation

Nobuaki HATORI,  Takanori SHIMIZU,  Makoto OKANO,  Masashige ISHIZAKA,  Tsuyoshi YAMAMOTO,  Yutaka URINO,  Masahiko MORI,  Takahiro NAKAMURA,  Yasuhiko ARAKAWA,  

[Date]2014/11/20
[Paper #]ED2014-86,CPM2014-143,LQE2014-114
Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating

Yuusuke TAKASHIMA,  Ryo SHIMIZU,  Masanobu HARAGUCHI,  Yoshiki NAOI,  

[Date]2014/11/20
[Paper #]ED2014-87,CPM2014-144,LQE2014-115
Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer

Noritoshi MAEDA,  Masafumi JO,  Hideki HIRAYAMA,  

[Date]2014/11/20
[Paper #]ED2014-88,CPM2014-145,LQE2014-116
Deep UV Light-emitting Diodes Containing a p-AlGaN Contacting Layer with High Al Content

Masafumi JO,  Noritoshi MAEDA,  Hideki HIRAYAMA,  

[Date]2014/11/20
[Paper #]ED2014-89,CPM2014-146,LQE2014-117
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films

Shiro Ozaki,  Kozo Makiyama,  Toshihiro Ohki,  Yoichi Kamada,  Masaru Sato,  Yoshitaka Niida,  Naoya Okamoto,  Satoshi Masuda,  Kazukiyo Joshin,  

[Date]2014/11/20
[Paper #]ED2014-90,CPM2014-147,LQE2014-118
12>> 1-20hit(31hit)