Electronics-Lasers and Quantum Electronics(Date:2012/11/22)

Presentation
表紙

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[Date]2012/11/22
[Paper #]
目次

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[Date]2012/11/22
[Paper #]
Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding

Jianbo LIANG,  Naoteru SHIGEGAWA,  Eiji HIGURASHI,  

[Date]2012/11/22
[Paper #]ED2012-65,CPM2012-122,LQE2012-93
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki KOBAYASHI,  Kazuhide KUMAKURA,  Tetsuya AKASAKA,  Hideki YAMAMOTO,  Toshiki MAKIMOTO,  

[Date]2012/11/22
[Paper #]ED2012-66,CPM2012-123,LQE2012-94
Application of III-V nitride films to photovoltaic devices

Masatomo Sumiya,  Sang Liwen,  Mickael Lozach,  

[Date]2012/11/22
[Paper #]ED2012-67,CPM2012-124,LQE2012-95
Estimation of Surface Fermi level differences in surface-modified GaN crystals

Yohei SUGIURA,  Ryosuke AMIYA,  Daiki TAJIMI,  Takeyoshi ONUMA,  Tomohiro YAMAGICHI,  Tohru HONDA,  

[Date]2012/11/22
[Paper #]ED2012-68,CPM2012-125,LQE2012-96
High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch)

Hiroki Tokunaga,  Akinori Ubukata,  Yoshiki Yano,  Yuya Yamaoka,  Akira Yamaguchi,  Toshiya Tabuchi,  Kou Matumoto,  

[Date]2012/11/22
[Paper #]ED2012-69,CPM2012-126,LQE2012-97
Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction

Noriyuki WATANABE,  Haruki YOKOYAMA,  Naoteru SHIGEKAWA,  

[Date]2012/11/22
[Paper #]ED2012-70,CPM2012-127,LQE2012-98
Pt/β-Ga_2O_3 Schottky Barrier Diodes Using Single-Crystal β-Ga_2O_3 Substrates

Kohei SASAKI,  Masataka HIGASHIWAKI,  Akito KURAMATA,  Takekazu MASUI,  Shigenobu YAMAKOSHI,  

[Date]2012/11/22
[Paper #]ED2012-71,CPM2012-128,LQE2012-99
Evaluation of transient current of GaN HEMTs on Si under light

Takuya JOKA,  Akio WAKEJIMA,  Takashi EGAWA,  

[Date]2012/11/22
[Paper #]ED2012-72,CPM2012-129,LQE2012-100
Electrical characteristics of MIS-diodes with A_2lO_3 deposited by ALD on GaN

Yasuhiro IWATA,  Toshiharu KUBO,  Takashi EGAWA,  

[Date]2012/11/22
[Paper #]ED2012-73,CPM2012-130,LQE2012-101
Effects of process conditions on AlGaN/GaN hetero-MOS structures

Yujin HORI,  Zenji YATABE,  Wan-cheng MA,  Tamotsu HASHIZUME,  

[Date]2012/11/22
[Paper #]ED2012-74,CPM2012-131,LQE2012-102
Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al_2O_3 Films

Shiro Ozaki,  Toshihiro Ohki,  Masahito Kanamura,  Tadahiro Imada,  Norikazu Nakamura,  Naoya Okamoto,  Toyoo Miyajima,  Toshihide Kikkawa,  

[Date]2012/11/22
[Paper #]ED2012-75,CPM2012-132,LQE2012-103
Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs

Tanvir HASAN,  Hirokuni TOKUDA,  Masaaki KUZUHARA,  

[Date]2012/11/22
[Paper #]ED2012-76,CPM2012-133,LQE2012-104
Selective MOVPE growth on nonpolar GaN substrates

D. JINNO,  S. OKADA,  H. MIYAKE,  K. HIRAMATSU,  Y. ENATSU,  S. NAGAO,  

[Date]2012/11/22
[Paper #]ED2012-77,CPM2012-134,LQE2012-105
RF-MBE growth of InGaN-based quantum nanostructures using DERI

Tsutomu ARAKI,  Nao UEMATSU,  Junichi SAKAGUCHI,  Ke WANG,  Tomohiro YAMAGUCHI,  Euijoon Yoon,  Yasushi NANISHI,  

[Date]2012/11/22
[Paper #]ED2012-78,CPM2012-135,LQE2012-106
Nitride semiconductor np-LEDs for improvement of efficiency droop

Takatoshi MORITA,  Mitsuru KAGA,  Yuka KUWANO,  Kenjo MATSUI,  Tetsuya TAKEUCHI,  Satoshi KAMIYAMA,  Motoaki IWAYA,  Isamu AKASAKI,  

[Date]2012/11/22
[Paper #]ED2012-79,CPM2012-136,LQE2012-107
Fabrication of red light emitting diode with GaN:Eu,Mg active layer

Tatsuki Otani,  Hiroto Sekiguchi,  Yasufumi Takagi,  Hiroshi Okada,  Akihiro Wakahara,  

[Date]2012/11/22
[Paper #]ED2012-80,CPM2012-137,LQE2012-108
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates

Yoon Seok KIM,  Akio KANETA,  Mitsuru FUNATO,  Yoichi KAWAKAMI,  Takashi MIYOSHI,  Shin-ichi NAGAHAMA,  

[Date]2012/11/22
[Paper #]ED2012-81,CPM2ai 2-13 8,LQE2012-109
Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs

Takayoshi Tsuchiyai,  Shinya Umeda,  Mihoko Sowa,  Toshiyuki Kondo,  Tsukasa Kitano,  Midori Mori,  Atsushi Suzuki,  Koichi Naniwae,  Hitoshi Sekine,  Motoaki Iwaya,  Tetsuya Takeuchi,  Satoshi Kamiyama,  Isamu Akasaki,  

[Date]2012/11/22
[Paper #]ED2012-82,CPM2012-139,LQE2012-110
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