Electronics-Lasers and Quantum Electronics(Date:2010/11/04)

Presentation
表紙

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[Date]2010/11/4
[Paper #]
目次

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[Date]2010/11/4
[Paper #]
Optical properties of ZnO films grown on sapphire substrates using high-energy H_2O generated by a catalytic reaction

Hitoshi MIURA,  Takashi OOTANI,  Tomoyoshi KURODA,  Hiroshi NISHIYAMA,  Kanji YASUI,  

[Date]2010/11/4
[Paper #]ED2010-142,CPM2010-108,LQE2010-98
Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE

Tsutomu ARAKI,  Keisuke KAWASHIMA,  Tomohiro YAMAGUCHI,  Yasushi NANISHI,  

[Date]2010/11/4
[Paper #]ED2010-143,CPM2010-109,LQE2010-99
GaN growth on pseudo (111)Al substrates by RF-MBE

Tohru HONDA,  Masato HAYASHI,  Taiga GOTO,  Tatsuhiro IGAKI,  

[Date]2010/11/4
[Paper #]ED2010-144,CPM2010-110,LQE2010-100
Growth characteristics of GaNP layer and InAs-based QDs on Si substrate

Satoru Tanabe,  Rei Nishio,  Yoshitaka Kobayashi,  Kosuke Nemoto,  Tomoyuki Miyamoto,  

[Date]2010/11/4
[Paper #]ED2010-145,CPM2010-111,LQE2010-101
AlN growth on SiC by LP-HVPE

Kenta OKUMURA,  Takuya NOMURA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Osamu ERYUU,  

[Date]2010/11/4
[Paper #]ED2010-146,CPM2010-112,LQE2010-102
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE

Kohei FUJITA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Jyun NORIMATSU,  Hideki HIRAYAMA,  

[Date]2010/11/4
[Paper #]ED2010-147,CPM2010-113,LQE2010-103
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells

Atsushi A. YAMAGUCHI,  Kazunobu KOJIMA,  

[Date]2010/11/4
[Paper #]ED2010-148,CPM2010-114,LQE2010-104
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM

Akira Hashiya,  Akio Kaneta,  Mitsuru Funato,  Yoichi Kawakami,  

[Date]2010/11/4
[Paper #]ED2010-149,CPM2010-115,LQE2010-105
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping

Takao OTO,  Ryan G. Banal,  Ken KATAOKA,  Mitsuru FUNATO,  Yoichi KAWAKAMI,  

[Date]2010/11/4
[Paper #]ED2010-150,CPM2010-116,LQE2010-106
High Efficiency AlInN Ultraviolet Photodiodes on AlN Templates

Yusuke SAKAI,  Junki ICHIKAWA,  Takashi EGAWA,  

[Date]2010/11/4
[Paper #]ED2010-151,CPM2010-117,LQE2010-107
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels

Kota OHI,  Tamotsu HASHIZUME,  

[Date]2010/11/4
[Paper #]ED2010-152,CPM2010-118,LQE2010-108
High-Power GaN-HEMT for Millimeter-Wave Amplifier

Kozo MAKIYAMA,  Toshihiro OHKI,  Naoya OKAMOTO,  Masahito KANAMURA,  Satoshi MASUDA,  Yasuhiro NAKASHA,  Kazukiyo JOSHIN,  Kenji IMANISHI,  Naoki HARA,  Shiro OZAKI,  Norikazu NAKAMURA,  Toshihide KIKKAWA,  

[Date]2010/11/4
[Paper #]ED2010-153,CPM2010-119,LQE2010-109
Characterization of insulated gates on GaN and AlGaN/GaN structures

Yujin HORI,  Naohisa HARADA,  Chihoko MIZUE,  Tamotsu HASHIZUME,  

[Date]2010/11/4
[Paper #]ED2010-154,CPM2010-120,LQE2010-110
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy

Daigo KIKUTA,  Tetsuo NARITA,  Naoko TAKAHASHI,  Keita KATAOKA,  Yasuji KIMOTO,  Tsutomu UESUGI,  Tetsu KACHI,  Masahiro SUGIMOTO,  

[Date]2010/11/4
[Paper #]ED2010-155,CPM2010-121,LQE2010-111
Vertical GaN Diode on GaN Free-Standing Substrate

Shuichi YAGI,  Shoko HIRATA,  Yasunobu SUMIDA,  Masahiro BESSHO,  Hiroji KAWAI,  Toshiharu MATSUEDA,  Akira USUI,  

[Date]2010/11/4
[Paper #]ED2010-156,CPM2010-122,LQE2010-112
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates

Masaya Okada,  Yu Saitoh,  Mitsunori Yokoyama,  Ken Nakata,  Seiji Yaegassi,  Koji Katayama,  Masaki Ueno,  Makoto Kiyama,  Tukuru Katsuyama,  Takao Nakamura,  Masaki Ueno,  Makoto Kiyama,  Tukuru Katsuyama,  Takao Nakamura,  

[Date]2010/11/4
[Paper #]ED2010-157,CPM2010-123,LQE2010-113
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[Date]2010/11/4
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[Date]2010/11/4
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