Electronics-Lasers and Quantum Electronics(Date:2004/10/14)

Presentation
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[Date]2004/10/14
[Paper #]
目次

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[Date]2004/10/14
[Paper #]
Group III nitrides grown on R-plane sapphire with different off-angle : Off-angle dependence

Akira HONSHIO,  Masataka IMURA,  Kazuyoshi IIDA,  Yasuto MIYAKE,  Hideki KASUGAI,  Takeshi KAWASHIMA,  Michinobu TSUDA,  Motoaki IWAYA,  Satoshi KAMIYAMA,  Hiroshi AMANO,  Isamu AKASAKI,  

[Date]2004/10/14
[Paper #]ED2004-116,CPM2004-90,LQE2004-54
Growth of GaN on 4H-SiC with different crystal planes

Yasuto MIYAKE,  Akira HONSHIO,  Tsukasa KITANO,  Masataka IMURA,  Kiyotaka NAKANO,  Hideki KASUGAI,  Takeshi KAWASHIMA,  Kazuyoshi IIDA,  Motoaki IWAYA,  Satoshi KAMIYAMA,  Hiroshi AMANO,  Isamu AKASAKI,  Hiroyuki KINOSHITA,  Hiromu SHIOMI,  

[Date]2004/10/14
[Paper #]ED2004-117,CPM2004-91,LQE2004-55
The influence of low temperature growth of GaN on Si(111) substrates

Tokuo YODO,  Takaaki FUKUYAMA,  Hiroshi FUCHIGAMI,  

[Date]2004/10/14
[Paper #]ED2004-118,CPM2004-92,LQE2004-56
Amorphous GaN Films Deposited on Al substrates by CS-MBE at Low Temperature

S. EGAWA,  T. HONDA,  H. HASEGAWA,  H. KAWANISHI,  

[Date]2004/10/14
[Paper #]ED2004-119,CPM2004-93,LQE2004-57
MOVPE growth of AlGaN with low dislocation density using rugged AlN epilayer

Akira ISHIGA,  Takashi ONISHI,  Yuhuai LIU,  Masaya HARAGUCHI,  Noriyuki KUWANO,  Tomohiko SHIBATA,  Mitsuhiro TANAKA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  

[Date]2004/10/14
[Paper #]ED2004-120,CPM2004-94,LQE2004-58
Hydride Vapor Phase Epitaxy of Al-Containing Nitrides with High Growth Rate : Is It Possible to Grow AlN by Hydride Vapor Phase Epitaxy?

Yoshinao KUMAGAI,  Akinori KOUKITU,  

[Date]2004/10/14
[Paper #]ED2004-121,CPM2004-95,LQE2004-59
The Effect of Growth Pressure on material properties of p-type GaN

Akinori Ubukata,  Hiroki Tokunaga,  Yoshiki Yano,  Nakao Akutsu,  Koh Matsumoto,  Toshiaki Yamazaki,  

[Date]2004/10/14
[Paper #]ED2004-122,CPM2004-96,LQE2004-60
Electrical Characteristics of GaN/SiC Heterojunction diodes by molecular-beam epitaxy

Yuki NAKANO,  Jun SUDA,  Tsunenobu KIMOTO,  

[Date]2004/10/14
[Paper #]ED2004-123,CPM2004-97,LQE2004-61
Mg-doping influence in AlGaN with high Al mole fraction

Takashi Ohnishi,  Akira Ishiga,  Yuhuai Liu,  Tomohiko Shibata,  Mitsuhiro Tanaka,  Hideto Miyake,  Kazumasa Hiramatsu,  

[Date]2004/10/14
[Paper #]ED2004-124,CPM2004-98,LQE2004-62
Evaluation of deep levels in AlGaN on sapphire by Capacitance DLTS

Jiro OSAKA,  Masato NISHIURA,  Toru OKINO,  Yutaka OHNO,  Shigeru KISHIMOTO,  Kouichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2004/10/14
[Paper #]ED2004-125,CPM2004-99,LQE2004-63
Study on InGaN ultra-thin films by high-resolution Rutherford backscattering spectrometry

Satoshi KURAI,  Hiroaki SAKUTA,  Yoshitomo YAMANAKA,  Tsunemasa TAGUCHI,  

[Date]2004/10/14
[Paper #]ED2004-126,CPM2004-100,LQE2004-64
Physical properties of transition metal and rare earth element doped GaN grown by MBE

Y.K. Zhou,  M.S. Kim,  S. Kimura,  S.W. Choi,  S. Emura,  S. Hasegawa,  H. Asahi,  

[Date]2004/10/14
[Paper #]ED2004-127,CPM2004-101,LQE2004-65
InN films on Sapphire(0001) substrate grown by ECR-plasma assisted MBE

Tokuo YODO,  Kiyonaga TAMOTO,  Teruya SHIMADA,  Hiroyuki NIGUCHI,  Youhei FUJII,  Takefumi MAOKA,  Yoshiyuki HARADA,  

[Date]2004/10/14
[Paper #]ED2004-128,CPM2004-102,LQE2004-66
Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry

Masayoshi YOSHITANI,  Koichiro AKASAKA,  Song-Bek CHE,  Xinqiang WANG,  Yoshihiro ISHITANI,  Akihiko YOSHIKAWA,  

[Date]2004/10/14
[Paper #]ED2004-129,CPM2004-103,LQE2004-67
Cubic-InN films on GaAs substrates grown by ECR-plasma assisted MBE

Tokuo YODO,  Takahiro YAMAMOTO,  Tomoyuki TAKAYAMA,  

[Date]2004/10/14
[Paper #]ED2004-130,CPM2004-104,LQE2004-68
Observation of InN dots on N-polar GaN grown by RF-MBE : Investigation of growth mechanism of N-polar InN dots growth

Naoki HASHIMOTO,  Naohiro KIKUKAWA,  Song-Bek CHE,  Yoshihiro ISHITANI,  Akihiko YOSHIKAWA,  

[Date]2004/10/14
[Paper #]ED2004-131,CPM2004-105,LQE2004-69
Al-Free n-Type Ohmic Contact for AlGaN/GaN Power HEMTs

Toshihiro OHKI,  Masahito KANAMURA,  Tsuyoshi TAKAHASHI,  Toshihide KIKKAWA,  Kazukiyo JOSHIN,  Naoki HARA,  

[Date]2004/10/14
[Paper #]ED2004-132,CPM2004-106,LQE2004-70
Low Frequency Noise Characteristics in SiGe Channel Heterostructure Dynamic Threshold MOSFET(HDTMOS)

Yoshio KAWASHIMA,  Akira INOUE,  Haruyuki SORADA,  Yoshihiko KANZAWA,  Takahiro KAWASHIMA,  Yoshihiro HARA,  Akira ASAI,  Takeshi TAKAGI,  

[Date]2004/10/14
[Paper #]ED2004-133,CPM2004-107,LQE2004-71
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