Electronics-Lasers and Quantum Electronics(Date:2003/09/26)

Presentation
表紙

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[Date]2003/9/26
[Paper #]
目次

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[Date]2003/9/26
[Paper #]
Fabrication of Schottky UV photodetector based on Al_<0.5>Ga_<0.5>N and its spectral responsivity

Hironori Yasukawa,  Yoshihiro Kida,  Akira Ishiga,  Yasuhiro Shibata,  Atsushi Motogaito,  Hideto Miyake,  Kazumasa Hiramatsu,  Youichiro Ohuchi,  Kazuyuki Tadatomo,  Yutaka Hamamura,  Kazutoshi Fukui,  

[Date]2003/9/26
[Paper #]LQE2003-65
Characterization of optical filters and GaN based Schottky ultraviolet detector in vacuum ultraviolet and soft X-ray region

Hironobu Watanabe,  Atsushi Motogaito,  Kazumasa Hiramatsu,  Kazutoshi Fukui,  Yutaka Hamamura,  Kazuyuki Tadatomo,  

[Date]2003/9/26
[Paper #]LQE2003-66
MOCVD growth of GaN films and AlGaN/GaN hetero-structures on 4 inch Si substrates

Hiroyasu ISHIKAWA,  Masahiro KATO,  Takashi AOYAMA,  Shinichi Matsui,  Maosheng Hao,  Takashi EGAWA,  Takashi JIMBO,  

[Date]2003/9/26
[Paper #]LQE2003-67
MOVPE Growth and Characterization of High-Al-Content A1_xGa_<1-x>N/GaN HEMT Layers on 100-mm-diameter Sapphire Substrates

Makoto MIYOSHI,  Masahiro SAKAI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  Takashi JIMBO,  Mitsuhiro TANAKA,  Osamu ODA,  Hiroyuki KATSUKAWA,  

[Date]2003/9/26
[Paper #]LQE2003-68
Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN

Takuma NANJO,  Naruhisa MIURA,  Toshiyuki OISHI,  Muneyoshi SUITA,  Yuji ABE,  Tatsuo OZEKI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2003/9/26
[Paper #]LQE2003-69
Effect of SiN films on thermal stability of AlGaN/GaN 2DEG structures

Kenji SHIOJIMA,  Suehiro SUGITANI,  Naoteru SHIGEKAWA,  

[Date]2003/9/26
[Paper #]LQE2003-70
Nitrogen deficiency on GaN and AlGaN surfaces induced during thermal and plasma processings

Tamotsu Hashizume,  

[Date]2003/9/26
[Paper #]LQE2003-71
Improvement of Breakdown Voltage for AlGaN/GaN HFETs On Si Substrates

Osamu MACHIDA,  Masataka YANAGIHARA,  Emiko CHINO,  Sinichi IWAKAMI,  Nobuo KANEKO,  Hirokazu GOTO,  Kohji OHTSUKA,  

[Date]2003/9/26
[Paper #]LQE2003-72
A consideration of orientation effect on AlGaN/GaN MODFETs

Hidetoshi ISHIDA,  Tomohiro MURATA,  Atsuhiko KANDA,  Motonori ISHII,  Yutaka HIROSE,  Yasuhiro UEMOTO,  Tsuyoshi TANAKA,  

[Date]2003/9/26
[Paper #]LQE2003-73
Ka-band 3W-Power AlGaN/GaN Heterojunction-FET

Takashi INOUE,  Yuhji ANDO,  Tatsuo NAKAYAMA,  Hironobu MIYAMOTO,  Yasuhiro OKAMOTO,  Kohji HATAYA,  Masaaki KUZUHARA,  

[Date]2003/9/26
[Paper #]LQE2003-74
High Trans-conductance Recessed Gate AlGaN/GaN HEMT on SiC Substrate

Juro Mita,  Hideyuki Okita,  Katsuaki KAIFU,  Tomoyuki YAMADA,  Yoshiaki SANO,  Takashi EGAWA,  Hiroyasu ISHIKAWA,  

[Date]2003/9/26
[Paper #]LQE2003-75
High-Power Recessed-Gate AlGaN/GaN Heterojunction Field-Plate FET

Yasuhiro OKAMOTO,  Yuji ANDO,  Kohji HATAYA,  Takashi INOUE,  Tatsuo NAKAYAMA,  Hironobu MIYAMOTO,  Masaaki KUZUHARA,  

[Date]2003/9/26
[Paper #]LQE2003-76
Design of GaN Power-Device with Field Plate Structure

Wataru Saito,  Yoshiharu Takada,  Masahiko Kuraguchi,  Kunio Tsuda,  Ichiro Omura,  Tsuneo Ogura,  

[Date]2003/9/26
[Paper #]LQE2003-77
High-Efficiency High-Power GaN-HEMT

Toshihide KIKKAWA,  Masahito KANAMURA,  Shigeru YOKOKAWA,  Nobuo ODACHI,  Mitsunori YOKOYAMA,  Masahiro NISHI,  Masahiro TANAKA,  Tsutomu Igarashi,  Yasunori TATENO,  Naoki HARA,  Kazukiyo JOSHIN,  

[Date]2003/9/26
[Paper #]LQE2003-78
Drain Current DLTS of AlGaN/GaN HEMTs

T. Okino,  M. Ochiai,  Y. Ohno,  S. Kishimoto,  K. Maezawa,  T. Mizutani,  

[Date]2003/9/26
[Paper #]LQE2003-79
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[Date]2003/9/26
[Paper #]
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[Date]2003/9/26
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