Electronics-Lasers and Quantum Electronics(Date:2003/09/25)

Presentation
表紙

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[Date]2003/9/25
[Paper #]
目次

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[Date]2003/9/25
[Paper #]
Control of height and density of GaN nano-structure and its antireflection and enhanced transmission properties

Hiroki YAMAJI,  Yuusuke TERADA,  Harumasa YOSHIDA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Toshie YAGUCHI,  

[Date]2003/9/25
[Paper #]LQE2003-50
UV light emitting device grown on AlGaN with low-dislocation density

K. Iida,  T. Kawashima,  A. Miyazaki,  M. Iwaya,  S. Kamiyama,  H. Amano,  I. Akasaki,  

[Date]2003/9/25
[Paper #]LQE2003-51
Recent Progress of UV-LEDs using Quaternary InAlGaN : Toward Shorter Wavelength and High-Efficiency Operation

Hideki HIRAYAMA,  Katsushi AKITA,  Takao NAKAMURA,  Makoto KIYAMA,  Yoshinobu AOYAGI,  

[Date]2003/9/25
[Paper #]LQE2003-52
Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD

Seikoh YOSHIDA,  Jiang LI,  Yoshiteru ITOH,  

[Date]2003/9/25
[Paper #]LQE2003-53
Development of near Ultra-Violet LED

Hiromitsu SAKAI,  Takaki YASUDA,  Hideki TOMOZAWA,  Mineo OKUYAMA,  

[Date]2003/9/25
[Paper #]LQE2003-54
White LEDs Based on III-V Nitrides

Masanobu SENDA,  Naoki SHIBATA,  

[Date]2003/9/25
[Paper #]LQE2003-55
Epitaxial Growth of InN Films and InN Nano-Columns by RF-MBE

Mize KAWAI,  Tatsuo OHASHI,  Tetsuya KOUNO,  Akihiko KIKUCHI,  Katsumi KISHINO,  

[Date]2003/9/25
[Paper #]LQE2003-56
Novel Method for the Activation of Acceptor Dopant Introducing Localized Band by Isoelectronic Dopant

Toshiyuki TAKIZAWA,  

[Date]2003/9/25
[Paper #]LQE2003-57
Reduction of Threading Dislocation in AlGaN with High Al Composition by Regrowth on Grooved Structure

Masahiro ISHIDA,  Masaaki YURI,  Daisuke UEDA,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2003/9/25
[Paper #]LQE2003-58
Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique

Satoshi Tamura,  Yasuhiro Fujimoto,  Masahiro Ogawa,  Masahiro Ishida,  Tetsuzo Ueda,  Masaaki Yuri,  

[Date]2003/9/25
[Paper #]LQE2003-59
Next Generation DVD and Requirements for Blue-Violet Laser

Toshihiro SUGAYA,  

[Date]2003/9/25
[Paper #]LQE2003-60
Fabrication of Nitride Semiconductor Vertical Microcavity LEDs and Prospects for Blue-Violet Vertical-Cavity Surface-Emitting Lasers

Munetaka ARITA,  Masao NISHIOKA,  Yasuhiko ARAKAWA,  

[Date]2003/9/25
[Paper #]LQE2003-61
Blue-Violet Laser diodes on GaN Substrate.

Shinya NUNOUE,  Shinji SAITO,  Hiroshi KATSUNO,  Yoshiyuki HARADA,  Koichi TACHIBANA,  Chie HONGO,  Masaaki ONOMURA,  

[Date]2003/9/25
[Paper #]LQE2003-62
Structural Defects in Degraded GaN-based Semiconductor Laser Diodes

Shigetaka Tomiya,  Shu Goto,  Motonobu Takeya,  Masao Ikeda,  

[Date]2003/9/25
[Paper #]LQE2003-63
Violet laser diodes on GaN substrates with low aspect ratio

Shigetoshi ITO,  Yukio YAMASAKI,  Toshiyuki KAWAKAMI,  Kumihiro TAKATANI,  Susumu Omi,  Yoshihiro UETA,  Takayuki YUASA,  Mototaka TANEYA,  

[Date]2003/9/25
[Paper #]LQE2003-64
奥付

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[Date]2003/9/25
[Paper #]
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[Date]2003/9/25
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