IEICE Technical Committee

Electronics-Lasers and Quantum Electronics(Date:2002/06/06)

Presentation

[Date]2002/6/6
[Paper #]

Recent Progress of Crystal Growth Technology for GaN Substrate

Akira USUI, Haruo SUNAKAWA, Atsushi A. YAMAGUCHI, Kenji KOBAYASHI,

[Date]2002/6/6
[Paper #]LQE2002-19

Epitaxial Growth of GaN on NGO Substrates by HVPE Method : Development of GaN substrates for Fabrication of Laser Diodes

Masashi NAKAMURA, Shinichi SASAKI, Eiichi SIMIZU, Tadaaki ASAHI, Kenji SATO, Ryota TANAKA, Hitoshi IMAI, Akihiro WAKAHARA, Akira YOSIDA,

[Date]2002/6/6
[Paper #]LQE2002-20

Study on Stress Distributions in Air-Bridged Lateral Epitaxial Grown GaN with Low Dislocation Density

Akihiko ISHIBASHI, Gaku SUGAHARA, Yasutoshi KAWAGUCHI, Toshiya YOKOGAWA,

[Date]2002/6/6
[Paper #]LQE2002-21

Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system

Randolph FLAUTA, Toshiro KASUYA, Tadashi OHACHI, Motoi WADA,

[Date]2002/6/6
[Paper #]LQE2002-22

Preparation of ZrB_2 single crystals and the substrates

Shigeki OTANI,

[Date]2002/6/6
[Paper #]LQE2002-23

Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE

Masayuki TORIKAI, Tomonobu KATO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI,

[Date]2002/6/6
[Paper #]LQE2002-24

Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate

Tetsuo NARITA, Tomonobu KATO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI,

[Date]2002/6/6
[Paper #]LQE2002-25

Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer

Bablu K. GHOSH, Toru TANIKAWA, Akihiro HASHIMOTO, Akio YAMAMOTO, Yoshifumi ITO,

[Date]2002/6/6
[Paper #]LQE2002-26

Growth of InGaN based LED on AlN/Sapphire templates

Hiroyoshi OHMURA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Kanji MASUI,

[Date]2002/6/6
[Paper #]LQE2002-27

Epitaxial Growth of III-Nitrides with Low Dislocations

H. Miyake, R. Takeuchi, K. Hiramatsu, H. Naoi, Y. Iyechika, T. Maeda, T. Riemann, F. Bertram, J. Christen,

[Date]2002/6/6
[Paper #]LQE2002-28

High Quality GaN Grown by Raised-Pressure HVPE

Shinya BOHYAMA, Kenji YOSHIKAWA, Hiroyuki NAOI, Hideto MIYAKE, Kazumasa HIRAMATSU, Yasushi IYECHIKA, Takayosi MAEDA,

[Date]2002/6/6
[Paper #]LQE2002-29

Growth and properties of AlInN, AlN and related structures

Shugo NITTA, Yasuhiro WATANABE, Yoshihito TOMIDA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI, Shigeo YAMAGUCHI, Yasuo IWAMURA,

[Date]2002/6/6
[Paper #]LQE2002-30

Growth Pressure Dependence of the Crystallinity of MOCVD Grown GaN Thin Films

S-W. Kim, T. Shibata, T. Sugimoto, T. Yamada, K. Haga, T. Suzuki,

[Date]2002/6/6
[Paper #]LQE2002-31

The Heating Effect of the Ammonia Injector for the Growth of GaN Thin Films by Ammonia-MBE

T. Shibata, S-W. Kim, M. Akatu, T. Yamada, K. Haga, T. Suzuki,

[Date]2002/6/6
[Paper #]LQE2002-32

Influence of Ambient Hydrogen in InGaN multiple quantum well structure

Akinori Ubukata, Hiroki Tokunaga, Yoshiki Yano, Akira Yamaguchi, Toshiaki Yamazaki,

[Date]2002/6/6
[Paper #]LQE2002-33

Control of n-type conduction for Si-doped AlN and AlGaN with high Al content

Yoshitaka TANIYASU, Makoto KASU, Naoki KOBAYASHI,

[Date]2002/6/6
[Paper #]LQE2002-34

Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices

Tohru HONDA, Kenichi IGA, Hideo KAWANISHI,

[Date]2002/6/6
[Paper #]LQE2002-35

Growth and Optical Properties of GaAsN Alloys Grown by RF-MBE

Atsushi NISHIKAWA, Ryuji KATAYAMA, Kentaro ONABE, Yasuhiro SHIRAKI,

[Date]2002/6/6
[Paper #]LQE2002-36