Electronics-Lasers and Quantum Electronics(Date:2001/06/08)

Presentation
表紙

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[Date]2001/6/8
[Paper #]
目次

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[Date]2001/6/8
[Paper #]
0xygen Gas Pressure Dependence of PLD-SiO_2 Thin Films with Organopolysiloxane Targets

Masaaki Kuramatsu,  Masayuki Okoshi,  Narumi Inoue,  

[Date]2001/6/8
[Paper #]LQE2001-16
Single-shot measurement of changes of the carrier-envelope-phase of amplified laser pulses by observing spectral interference

Yoshihiko Fujihira,  Masayuki Kakehata,  Hideyuki Takada,  Yohei Kobayashi,  Kenhi Torizuka,  Tetsuya Homma,  Hideo Takahashi,  

[Date]2001/6/8
[Paper #]LQE2001-17
The onset of optical breakdown in si11ca glass under KrF radiation

Yoshizo Kawaguchi,  

[Date]2001/6/8
[Paper #]LQE2001-18
Highly Nd-doped YAG crystals

Yoshiharu URATA,  Satoshi WADA,  

[Date]2001/6/8
[Paper #]LQE2001-19
Development of the Nd doped YAG Ceramics laser

T. Uematsu,  T. Murai,  K. Takaichi,  K. Misawa,  J. Lu,  H. Yagi,  T. Yanagitani,  K. Ueda,  

[Date]2001/6/8
[Paper #]LQE2001-20
Development of pump source for Raman amplifiers and supercontinuum generation using P-dope fibers

Atsushi TANIGUCHI,  Mahendra ORABHU,  Nam Seong KIM,  Akira SHIRAKAWA,  Ken-ichi UEDA,  

[Date]2001/6/8
[Paper #]LQE2001-21
Optimization control of optical pulse squeezing and intermode quantum correlation in nonlinear flbers using a classical pulse shaper

Daisuke Fujishima,  Masahiro Takeoka,  Fumihiko Kannari,  

[Date]2001/6/8
[Paper #]LQE2001-22
Effects of growth rate on lateral compositional modulation of InGaAsP/InP (001) grown by metal organic molecular beam epitaxy

Matsuyuki Ogasawara,  

[Date]2001/6/8
[Paper #]LQE2001-23
Electronic States and Photoionization Processes in Self-Assembled InAs Quantum Dots

S. Fujimoto,  S.-W Lee,  K. Hirotani,  Ph. Lelong,  K. Hirakawa,  

[Date]2001/6/8
[Paper #]LQE2001-24
Fabrication of GaN-Based Quantum Dots and Their Application to Lasers

Koichi Tachibana,  Takao Someya,  Yasuhiko Arakawa,  

[Date]2001/6/8
[Paper #]LQE2001-25
Epitaxial Growth of Eudoped GaN and its optical property

Hyungin Bang,  Shinichi Morishima,  Katsuhiro Akimoto,  

[Date]2001/6/8
[Paper #]LQE2001-26
Blue LED using a GaNP SQW

Seikoh Yoshida,  Yoshiteru Itoh,  Junjiroh Kikawa,  

[Date]2001/6/8
[Paper #]LQE2001-27
High reflective GaN/Al_<0.6>Ga_<0.4>N distributed Bragg reflector for VCSEL

Naoyuki Nakada,  Hiroyasu Ishikawa,  Takashi Egawa,  Takashi Jimbo,  Masayoshi Umeno,  

[Date]2001/6/8
[Paper #]LQE2001-28
Novel Ridge-type InGaN MQW Laser Diodes Fabricated by Selective Area re-growth on GaN Substrates

Masaru Kuramoto,  Akitaka Kimura,  Chiaki Sasaoka,  Takahiro Arakida,  Masaaki Nido,  Masashi Mizuta,  

[Date]2001/6/8
[Paper #]LQE2001-29
AIGaInN-based high power lasers

Motonobu Takeya,  Tsuyoshi Tojyo,  Takeharu Asano,  Tomonori Hino,  Satoru Kijima,  Shu Goto,  Shirou Uchida,  Masao Ikeda,  

[Date]2001/6/8
[Paper #]LQE2001-30
[OTHERS]

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[Date]2001/6/8
[Paper #]