Electronics-Lasers and Quantum Electronics(Date:1998/02/17)

Presentation
表紙

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[Date]1998/2/17
[Paper #]
目次

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[Date]1998/2/17
[Paper #]
1.3-μm InP-based n-type Modulation-doped Strained Multi-quantum Well Lasers

K. Nahahara,  K. Uomi,  T. Haga,  T. Taniwatari,  T. Toyonaka,  

[Date]1998/2/17
[Paper #]
Optically Pumped Surface-Normal MQW Optical Amplifiers

Masahiro Toki,  Takahiro Setaka,  Osamu Hanaizumi,  Shojiro Kawakami,  

[Date]1998/2/17
[Paper #]
Requirements of devices in parallel optical interconnections toward coding free operation

Takeshi Nagahori,  Ichiro Hatakeyama,  Kazunori Miyoshi,  

[Date]1998/2/17
[Paper #]
Polarization switching mechanisms in a 633-nm He-Ne laser caused by injection light

Munechika Kubota,  Karomi Koide,  Naoto Nakano,  Tatehisa Ohta,  Takumi Ichinose,  

[Date]1998/2/17
[Paper #]
Stereolithography System by Multiple Spots Exposure Using a Short Arc Discharge Lamp

Takayuki KAMITANI,  Yusuke NUMATA,  Yoji MARUTANI,  

[Date]1998/2/17
[Paper #]
An MOCVD grown low threshold polarization controlled vertical-cavity surface emitting laser on GaAs (311) B

Akimasa MIZUTANI,  Nobuaki HATORI,  Nobuhiko NISHIYAMA,  Fumio KOYAMA,  Kenichi IGA,  

[Date]1998/2/17
[Paper #]
Fabrication of GaN nano-columns and application for GaN quantum disk

M. Yoshizawa,  A. Kikuchi,  K. Kishino,  

[Date]1998/2/17
[Paper #]
GaN micro-facet laser fabricated by selective area MOVPE

T. Akasaka,  S. Ando,  Y. Kobayashi,  M. Kumagai,  N. Kobayashi,  

[Date]1998/2/17
[Paper #]
Analysis of current overflow for GaN based laser diodes

Katsunobu Sasanuma,  Gen-ichi Hatakoshi,  

[Date]1998/2/17
[Paper #]
[OTHERS]

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[Date]1998/2/17
[Paper #]