Electronics-Integrated Circuits and Devices(Date:2019/08/07)

[Invited Talk] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SGMONOS flash memory for security applications

Takahiro Shimoi(Renesas Electronics),  Tomoya Saito(Renesas Electronics),  Hirokazu Nagase(Renesas Electronics),  Masayuki Izuna(Renesas Electronics),  Akihiko Kanda(Renesas Electronics),  Takashi Ito(Renesas Electronics),  Takashi Kono(Renesas Electronics),  

[Paper #]SDM2019-39,ICD2019-4
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET

Hidehiro Asai(AIST),  Wen Hsin Chang(AIST),  Naoya Okada(AIST),  Koich Fukuda(AIST),  Toshifumi Irisawa(AIST),  

[Paper #]SDM2019-37,ICD2019-2
[Invited Talk] A Scalable CMOS Annealing Processor for Solving Large-scale Combinatorial Optimization Problems

Masato Hayashi(Hitachi),  Takashi Takemoto(Hitachi),  Chihiro Yoshimura(Hitachi),  Masanao Yamaoka(Hitachi),  

[Paper #]SDM2019-36,ICD2019-1
[Invited Talk] "STEAM" for Next IoT/AI

Takahiro Kitayama(KAMAKE no SUSUME),  

[Paper #]SDM2019-38,ICD2019-3
[Invited Talk] Ultrafast Photonics Packaging using Room Temperature Bonding

Ryo Takigawa(Kyushu Univ.),  

[Paper #]
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage

Tomoko Mizutani(Univ. of Tokyo),  Kiyoshi Takeuchi(Univ. of Tokyo),  Takuya Saraya(Univ. of Tokyo),  Masaharu Kobayashi(Univ. of Tokyo),  Toshiro Hiramoto(Univ. of Tokyo),  

[Paper #]SDM2019-41,ICD2019-6
[Invited Talk] Low-Noise Low-Power MEMS Accelerometer with Digital Noise-Reduction Techniques

Yuki Furubayashi(Hitachi, Ltd.),  Takashi Oshima(Hitachi, Ltd.),  Yudai Kamada(Hitachi, Ltd.),  Atsushi Isobe(Hitachi, Ltd.),  

[Paper #]SDM2019-43,ICD2019-8

Tetsufumi Tanamoto(Teikyo Univ.),  

[Paper #]SDM2019-40,ICD2019-5
A study of the method to extend a distance for transferring power in a WPT system by using a Q-value enhancement technique

Yasuhiro Sugimoto(Chuo Univ.),  Touma Suzuki(Chuo Univ.),  

[Paper #]SDM2019-44,ICD2019-9
[Invited Lecture] 3300V Scaled IGBT Switched by 5V Gate Drive

Toshiro Hiramoto(Univ. of Tokyo),  Takuya Saraya(Univ. of Tokyo),  Kazuo Itou(Univ. of Tokyo),  Toshihiko Takakura(Univ. of Tokyo),  Munetoshi Fukui(Univ. of Tokyo),  Shinichi Suzuki(Univ. of Tokyo),  Kiyoshi Takeuchi(Univ. of Tokyo),  Masanori Tsukuda(Green Electronics Research Inst.),  Yohichiroh Numasawa(Meiji Univ,),  Katsumi Satoh(Mitsubishi Electric Corp),  Tomoko Matsudai(Toshiba Electronic Devices & Storage Corp.),  Wataru Saito(Kyushu Univ.),  Kuniyuki Kakushima(Tokyo Inst. of Technology),  Takuya Hoshii(Tokyo Inst. of Technology),  Kazuyoshi Furukawa(Tokyo Inst. of Technology),  Masahiro Watanabe(Tokyo Inst. of Technology),  Naoyuki Shigyo(Tokyo Inst. of Technology),  Hitoshi Wakabayashi(Tokyo Inst. of Technology),  Kazuo Tsutsui(Tokyo Inst. of Technology),  Hiroshi Iwai(Tokyo Inst. of Technology),  Atsushi Ogura(Meiji Univ.),  Shin-ichi Nishizawa(Kyushu Univ.),  Ichiro Omura(Kyushu Inst. of Tech.),  Hiromichi Ohashi(Tokyo Inst. of Tech.),  

[Paper #]SDM2019-42,ICD2019-7
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”

Wataru Yabuki(KIT),  Jiro Ida(KIT),  Takayuki Mori(KIT),  Koichiro Ishibashi(UEC),  Yasuo Arai(KEK),  

[Paper #]SDM2019-51,ICD2019-16
[Invited Talk] A study on a ferroelectric transistor memory with ultrathin IGZO channel

Masaharu Kobayashi(Univ. Tokyo),  Fei Mo(Univ. Tokyo),  Yusaku Tagawa(Univ. Tokyo),  Chengji Jin(Univ. Tokyo),  MinJu Ahn(Univ. Tokyo),  Takuya Saraya(Univ. Tokyo),  Toshiro Hiramoto(Univ. Tokyo),  

[Paper #]SDM2019-45,ICD2019-10
Evaluation of IC-Chip Noise Reduction using Magnetic Materials

Kosuke Jike(Kobe Univ),  Koh Watanabe(Kobe Univ),  Satoshi Tanaka(Kobe Univ),  Noriyuki Miura(Kobe Univ),  Makoto Nagata(Kobe Univ),  Akihiro Takahashi(Tohoku Univ),  Yasunori Miyazawa(Tohoku Univ),  Masahiro Yamaguchi(Tohoku Univ),  

[Paper #]SDM2019-49,ICD2019-14
[Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application

Reika Ichihara(TMC),  Shosuke Fujii(TMC),  Takuya Konno(TMC),  Marina Yamaguchi(TMC),  Harumi Seki(TMC),  Hiroki Tanaka(TMC),  Dandan Zhao(TMC),  Yoko Yoshimura(TMC),  Masumi Saitoh(TMC),  Masato Koyama(TMC),  

[Paper #]SDM2019-50,ICD2019-15
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs

Kimihiko Kato(Univ. of Tokyo/AIST),  Hiroaki Matsui(Univ. of Tokyo),  Hitoshi Tabata(Univ. of Tokyo),  Mitsuru Takenaka(Univ. of Tokyo),  Shinichi Takagi(Univ. of Tokyo),  

[Paper #]SDM2019-46,ICD2019-11
Interface with Opamp Output-Impedance Calibration Technique for a Large Integrated 2-D Resistive Sensor Array

Yohsuke Shiiki(Keio Univ.),  Hiroki Ishikuro(Keio Univ.),  

[Paper #]SDM2019-48,ICD2019-13
Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET"

Takuya Yamada(KIT),  Jiro Ida(KIT),  Takayuki Mori(KIT),  Nobuhiko Yasumaru(KIT),  Kenji Itoh(KIT),  Koichiro Ishibashi(UEC),  

[Paper #]SDM2019-52,ICD2019-17
[Invited Talk] A 28nm 600MHz Automotive Flash Microcontroller with Virtualization-Assisted Processor for Next-Generation Automotive Architecture supporting ISO26262 ASIL-D

Naoto Okumura(Renesas Electronics Corp.),  Sugako Otani(Renesas Electronics Corp.),  Norimasa Otsuki(Renesas Electronics Corp.),  Yasufumi Suzuki(Renesas Electronics Corp.),  Shohei Maeda(Renesas Electronics Corp.),  Tomonori Yanagita(Renesas Electronics Corp.),  Takao Koike(Renesas Electronics Corp.),  Masao Ito(Renesas Electronics Corp.),  Minoru Uemura(Renesas Electronics Corp.),  Yasuhisa Shimazaki(Renesas Electronics Corp.),  Toshihiro Hattori(Renesas Electronics Corp.),  Noriaki Sakamoto(Renesas Electronics Corp.),  Hiroyuki Kondo(Renesas Electronics Corp.),  

[Paper #]SDM2019-47,ICD2019-12