Electronics-Integrated Circuits and Devices(Date:2016/04/14)

Presentation
[Invited Lecture] A Cost Effective Test Screening Method on 40-nm 4-Mb Embedded SRAM for Low-power MCU

Yuta Yoshida(RSD),  Yoshisato Yokoyama(Renesas Electronics),  Yuichiro Ishii(Renesas Electronics),  Toshihiro Inada(RSD),  Koji Tanaka(RSD),  Miki Tanaka(RSD),  Yoshiki Tsujihashi(RSD),  Koji Nii(Renesas Electronics),  

[Date]2016-04-14
[Paper #]ICD2016-1
[Invited Lecture] A 298-fJ/writecycle 650-fJ/readcycle 8T Three-Port SRAM in 28-nm FD-SOI Process Technology for Image Processor

Haruki Mori(Kobe Univ.),  Tomoki Nakagawa(Kobe Univ.),  Yuki Kitahara(Kobe Univ.),  Yuta Kawamoto(Kobe Univ.),  Kenta Takagi(Kobe Univ.),  Shusuke Yoshimoto(Kobe Univ.),  Shintaro Izumi(Kobe Univ.),  Koji Nii(Renesas Electronics),  Hiroshi Kawaguchi(Kobe Univ.),  Masahiko Yoshimoto(Kobe Univ.),  

[Date]2016-04-14
[Paper #]ICD2016-3
[Invited Lecture] 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator

Hiroki Koike(Tohoku Univ.),  Sadahiko Miura(Tohoku Univ.),  Hiroaki Honjo(Tohoku Univ.),  Tosinari Watanabe(Tohoku Univ.),  Hideo Sato(Tohoku Univ.),  Soshi Sato(Tohoku Univ.),  Takashi Nasuno(Tohoku Univ.),  Yasuo Noguchi(Tohoku Univ.),  Mitsuo Yasuhira(Tohoku Univ.),  Takaho Tanigawa(Tohoku Univ.),  Masaaki Niwa(Tohoku Univ.),  Kenchi Ito(Tohoku Univ.),  Shoji Ikeda(Tohoku Univ.),  Hideo Ohno(Tohoku Univ.),  Tetsuo Endoh(Tohoku Univ.),  

[Date]2016-04-14
[Paper #]ICD2016-10
[Invited Lecture] A 0.6V Operation ReRAM Program Voltage Generator with Adaptively Optimized Comparator Bias-Current for Batteryless IoT Local Device

Masahiro Tanaka(Chuo Univ.),  Tomoya Ishii(Chuo Univ.),  Shogo Hachiya(Chuo Univ.),  Sheyang Ning(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2016-04-14
[Paper #]ICD2016-6
[Invited Lecture] A 7T-SRAM with Data-Write Technique by Capacitive Coupling

Daisaburo Takashima(Toshiba),  Masato Endo(Toshiba),  Kazuhiro Shimazaki(Toshiba Microelectronics),  Manabu Sai(Toshiba Microelectronics),  Masaaki Tanino(Toshia Information Systems),  

[Date]2016-04-14
[Paper #]ICD2016-2
[Invited Lecture] Reliability Projecting for ReRAM based on Stochastic Differential Equation

Zhiqiang Wei(PSCS),  Koji Eriguchi(Kyoto Univ.),  Shunsaku Muraoka(PSCS),  Koji Katayama(PSCS),  Ryotaro Yasuhara(PSCS),  Kawai Ken(PSCS),  Yukio Hayakawa(PSCS),  Kazuhiko Shimakawa(PSCS),  Takumi Mikawa(PSCS),  Yoneda Shinichi(PSCS),  

[Date]2016-04-14
[Paper #]ICD2016-7
[Invited Lecture] ReRAM reliability characterization and improvement by machine learning

Tomoko Ogura Iwasaki(Chuo Univ.),  Sheyang Ning(Chuo Univ.),  Hiroki Yamazawa(Chuo Univ.),  Chao Sun(Chuo Univ.),  Shuhei Tanakamaru(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2016-04-14
[Paper #]ICD2016-8
[Invited Lecture] A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance

Hitoshi Saito(FSL),  Ko Nakamura(FSL),  Soichiro Ozawa(FSL),  Naoya Sashida(FSL),  Satoru Mihara(FSL),  Yukinobu Hikosaka(FSL),  Wensheng Wang(FSL),  Tomoyuki Hori(FSL),  Kazuaki Takai(FSL),  Mitsuharu Nakazawa(FSL),  Noboru Kosugi(FSL),  Makoto Hamada(FSL),  Shoichiro Kawashima(FSL),  Takashi Eshita(FSL),  Masato Matsumiya(FSL),  

[Date]2016-04-14
[Paper #]ICD2016-9
A 64kb 16nm Asynchronous Disturb Current Free 2-Port SRAM with PMOS Pass-Gates for FinFET Technologies

Hidehiro Fujiwara(TSMC),  Li-Wen Wang(TSMC),  Yen-Huei Chen(TSMC),  Koo-Cheng Lin(TSMC),  Dar Sun(TSMC),  Shin-Rung Wu(TSMC),  Jhon-Jhy Liaw(TSMC),  Chin-Yung Lin(TSMC),  Mu-Chi Chiang(TSMC),  Hung-Jen Liao(TSMC),  Shien-Yang Wu(TSMC),  Jonathan Chang(TSMC),  

[Date]2016-04-14
[Paper #]ICD2016-4
[Invited Lecture] Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy

Yasuo Takahashi(Hokkaido Univ.),  Masaki Kudo(Kyusyu Univ.),  Masashi Arita(Hokkaido Univ.),  

[Date]2016-04-14
[Paper #]ICD2016-5
[Invited Talk] Technology trends and near-future applications of embedded STT-MRAM

Shinobu Fujita(Toshiba),  

[Date]2016-04-14
[Paper #]ICD2016-12
[Invited Lecture] Power reduction based on MRAM

Hiroaki Yoda(toshiba),  Shinobu Fujita(toshiba),  

[Date]2016-04-14
[Paper #]ICD2016-11
[Invited Talk] A 90nm Embedded 1T-MONOS Flash Macro for Automotive Applications with 0.07mJ/8kB Rewrite Energy and Endurance Over 100M Cycles Under Tj of 175°C

Satoru Nakanishi(Renesas),  Hidenori Mitani(Renesas),  Ken Matsubara(Renesas),  Hiroshi Yoshida(Renesas),  Takashi Kono(Renesas),  Yasuhiko Taito(Renesas),  Takashi Ito(Renesas),  Takashi Kurafuji(Renesas),  Kenji Noguchi(Renesas),  Hideto Hidaka(Renesas),  Tadaaki Yamauchi(Renesas),  

[Date]2016-04-15
[Paper #]ICD2016-15
[Invited Lecture] Faster LBA scrambler utilized SSD with Garbage Collection Optimization

Chihiro Matsui(Chuo Univ.),  Asuka Arakawa(Chuo Univ.),  Chao Sun(Chuo Univ.),  Tomoko Ogura Iwasaki(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2016-04-15
[Paper #]ICD2016-13
[Invited Lecture] Design of SCM/NAND Flash Hybrid SSD System for Each Data Access Pattern

Tomoaki Yamada(Chuo Univ.),  Shun Okamoto(Chuo Univ.),  Chao Sun(Chuo Univ.),  Shogo Hachiya(Chuo Univ.),  Tomoko Ogura Iwasaki(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2016-04-15
[Paper #]ICD2016-14
[Invited Lecture] Highly Reliable Method for Long-Term Semiconductor Data Storage

Tomonori Takahashi(Chuo Univ.),  Senju Yamazaki(Chuo Univ.),  Shuhei Tanakamaru(Chuo Univ.),  Tomoko Ogura Iwasaki(Chuo Univ.),  Shogo Hachiya(Chuo Univ.),  Ken Takeuchi(Chuo Univ.),  

[Date]2016-04-15
[Paper #]