Electronics-Integrated Circuits and Devices(Date:2008/04/10)

Presentation
表紙

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[Date]2008/4/10
[Paper #]
目次

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[Date]2008/4/10
[Paper #]
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-β-ratio Memory Cell

Takahiko SASAKI,  Atsushi KAWASUMI,  Tomoaki YABE,  Yasuhisa TAKEYAMA,  Osamu HIRABAYASHI,  Keiichi KUSHIDA,  Akihito TOHATA,  Akira KATAYAMA,  Gou FUKANO,  Yuki FUJIMURA,  Nobuaki OTSUKA,  

[Date]2008/4/10
[Paper #]ICD2008-1
65nm Low-Power High-Density SRAM Operable at 1.0V under 3sigma Systematic Variation Using Separate Vth Monitoring and Body Bias for NMOS and PMOS

Masanao YAMAOKA,  Noriaki MAEDA,  Yasuhisa SHIMAZAKI,  Kenichi OSADA,  

[Date]2008/4/10
[Paper #]ICD2008-2
An 833MHz Pseudo Two-Port Embedded DRAM for Graphics Applications

Mariko Kaku,  Hitoshi Iwai,  Takeshi Nagai,  Masaharu Wada,  Atsushi Suzuki,  Tomohisa Takai,  Naoko Itoga,  Takayuki Miyazaki,  Takayuki Iwai,  Hiroyuki Takenaka,  Takehiko Hojo,  Shinji Miyano,  Nobuaki Otsuka,  

[Date]2008/4/10
[Paper #]ICD2008-3
Embedded DRAM Technology for Consumer Electronics

H. Shirai,  R. Ishikawa,  Y. Itoh,  T. Kitamura,  M. Takeuchi,  T. Sakoh,  K. Inoue,  T. Kawasaki,  N. Katsuki,  H. Hoshizaki,  S. Kuwabara,  H. Natsume,  M. Sakao,  T. Tanigawa,  

[Date]2008/4/10
[Paper #]ICD2008-4
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Dai Nakamura,  Kazushige Kanda,  Masaru Koyanagi,  Toshio Yamamura,  Koji Hosono,  Masahiro Yoshihara,  Toru Miwa,  Yosuke Kato,  Alex Mak,  Siu Lung Chan,  Frank Tsai,  Raul Cernea,  Binh Le,  Eiichi Makino,  Takashi Taira,  Hiroyuki Otake,  Norifumi Kajimura,  Susumu Fujimura,  Yoshiaki Takeuchi,  Mikihiko Itoh,  Masanobu Shirakawa,  Yuya Suzuki,  Yuki Okukawa,  Masatsugu Kojima,  Kazuhide Yoneya,  Takamichi Arizono,  Toshiki Hisada,  Shinji Miyamoto,  Mitsuhiro Noguchi,  Toshitake Yaegashi,  Masaaki Higashitani,  Fumitoshi Ito,  Teruhiko Kamei,  Gertjan Hemink,  Tooru Maruyama,  Kazumi Ino,  Shigeo Ohshima,  

[Date]2008/4/10
[Paper #]ICD2008-5
NAND flash memory and SSD

Ken Takeuchi,  

[Date]2008/4/10
[Paper #]ICD2008-6
Probing into the Potential of the Future Flash : An Impact of Flash Revolution

Kazuhiko KAJIGAYA,  Naoharu SHINOZAKI,  Toshio KAKIHARA,  Kazushige KANDA,  Michio KOBAYASHI,  Makoto SAEN,  Tadahiko SUGIBAYASHI,  Ken TAKEUCHI,  Hisao TSUKAZAWA,  

[Date]2008/4/10
[Paper #]ICD2008-7
A 65nm Pure CMOS One-time Programmable Memory Using a Two-Port Antifuse Cell Implemented in a Matrix Structure

Kensuke MATSUFUJI,  Toshimasa NAMEKAWA,  Hiroaki NAKANO,  Hiroshi ITO,  Osamu WADA,  Nobuaki OTSUKA,  

[Date]2008/4/10
[Paper #]ICD2008-8
An 8kB EEPROM-Emulation DataFLASH Module for Automotive MCU and Trend of Embedded Flash memory

Shinji KAWAI,  Akira HOSOGANE,  Shigehiro KUGE,  Toshihiro ABE,  Kohei HASHIMOTO,  Tsukasa OISHI,  Naoki TSUJI,  Kiyohiko SAKAKIBARA,  Kenji NOGUCHI,  

[Date]2008/4/10
[Paper #]ICD2008-9
Current Status of Impacts and Countermeasures in Environmental Neutron Induced Failures in Electric Systems : Evolution of Multi-Node Upset Issues

Eishi Ibe,  

[Date]2008/4/10
[Paper #]ICD2008-10
15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers

RYUJI OHBA,  YUICHIRO MITANI,  NAOHARU SUGIYAMA,  SHINOBU FUJITA,  

[Date]2008/4/10
[Paper #]ICD2008-11
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme

Ryusuke NEBASHI,  Noboru SAKIMURA,  Tadahiko SUGIBAYASHI,  Hiroaki HONJO,  Shinsaku SAITO,  Yuko KATO,  Naoki KASAI,  

[Date]2008/4/10
[Paper #]ICD2008-12
A 250-MHz 1-Mbit Embedded MRAM Macro Using 2T1MTJ Cell with Bitline Separation and Half-pitch Shift Architecture

Noboru SAKIMURA,  Tadahiko SUGIBAYASHI,  Ryusuke NEBASHI,  Hiroaki HONJO,  Shinsaku SAITO,  Yuko KATO,  Naoki KASAI,  

[Date]2008/4/10
[Paper #]ICD2008-13
Experimental proof of spin transfer switching in MRAM cell using TbCoFe/CoFeB layers with perpendicular magnetic anisotropy

Masahiko Nakayama,  Tadashi Kai,  Naoharu Shimomura,  Minoru Amano,  Eiji Kitagawa,  Toshihiko Nagase,  Masatoshi Yoshikawa,  Tatsuya Kishi,  Sumio Ikegawa,  Hiroaki Yoda,  

[Date]2008/4/10
[Paper #]ICD2008-14
Electrode Material Dependence on Binary Oxide RRAM Characteristics

Yukio TAMAI,  Hisashi SHIMA,  Hiroyuki AKINAGA,  Yasunari HOSOI,  Shigeo OHNISHI,  Nobuyoshi AWAYA,  

[Date]2008/4/10
[Paper #]ICD2008-15
Realistic future trend of non-volatile semiconductor memory and feasibility study of ultra-low-cost high-speed universal non-volatile memory : feasibility study of BiCS type FeRAM

Shigeyoshi Watanabe,  

[Date]2008/4/10
[Paper #]ICD2008-16
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[Date]2008/4/10
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[Date]2008/4/10
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