Electronics-Integrated Circuits and Devices(Date:2006/04/06)

Presentation
表紙

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[Date]2006/4/6
[Paper #]
目次

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[Date]2006/4/6
[Paper #]
The Origin of Variable Retention Time in DRAM : Fluctuation of Junction Leakage

Yuki MORI,  Kiyonori OHYU,  Kensuke OKONOGI,  Renichi YAMADA,  

[Date]2006/4/6
[Paper #]ICD2006-1
A 65nm Low-Power Embedded DRAM with Extended Data-Retention Sleep Mode

Tomohisa TAKAI,  Takeshi NAGAI,  Masaharu WADA,  Hitoshi IWAI,  Mariko KAKU,  Atsushi SUZUKI,  Naoko ITOGA,  Takayuki MIYAZAKI,  Hiroyuki TAKENAKA,  Takehiko HOJO,  Shinji MIYANO,  

[Date]2006/4/6
[Paper #]ICD2006-2
An 8.4ns Column-Access 1.6Gb/s/pin 512Mb DDR3 SDRAM with an 8:4 Multiplexed Data Transfer Scheme and Dual-Clock Latency Counter

Shuichi KUBOUCHI,  Hiroki FUJISAWA,  koji KUROKI,  Naohisa NISHIOKA,  Yoshiro RIHO,  Hiromasa NODA,  Isamu FUJII,  Hideyuki YOKO,  Ryuuji TAKISHITA,  Takahiro ITO,  Hitoshi TANAKA,  Masayuki NAKAMURA,  

[Date]2006/4/6
[Paper #]ICD2006-3
Sub-1V DRAM Design

Takayuki Kawahara,  

[Date]2006/4/6
[Paper #]ICD2006-4
Technology development of 128Mb-FBC (Floating Body Cell) Memory by 90nm node CMOS process

Hiroomi NAKAJIMA,  Yoshihiro MINAMI,  Tomoaki SHINO,  Atsushi SAKAMOTO,  Tomoki HIGASHI,  Naoki KUSUNOKI,  Katsuyuki FUJITA,  Kosuke HATSUDA,  Takashi OHSAWA,  Nobutoshi AOKI,  Hiroyoshi TANIMOTO,  Mutsuo MORIKADO,  Kazumi INOH,  Takeshi HAMAMOTO,  Akihiro NITAYAMA,  

[Date]2006/4/6
[Paper #]ICD2006-5
Techniques and Scaling Scenario for Chain FeRAM

Daisaburo TAKASHIMA,  

[Date]2006/4/6
[Paper #]ICD2006-6
Technology Direction of New Memory IP for Advanced SoC Platform Design

Kazutami ARIMOTO,  

[Date]2006/4/6
[Paper #]ICD2006-7
Requirement for the Memory Architecture from the SoC Design Point of View

Masafumi TAKAHASHI,  

[Date]2006/4/6
[Paper #]ICD2006-8
What is Your Urgent Task in Emerging Embedded Memory Development?

Hideto HIDAKA,  Masao TAGUCHI,  Takayuki KAWAHARA,  Daisaburo TAKASHIMA,  Shuichi UENO,  Masashi TAKATA,  Masafumi TAKAHASHI,  

[Date]2006/4/6
[Paper #]ICD2006-9
Nonvolatile SRAM based on Phase Change

Masashi TAKATA,  Kazuya NAKAYAMA,  Takatomi IZUMI,  Toru SHINMURA,  Junichi AKITA,  Akio KITAGAWA,  

[Date]2006/4/6
[Paper #]ICD2006-10
A 75MHz MRAM with Pipe-Lined Self-Reference Read Scheme for Mobile/Robotics Memory System

Leona Okamura,  Yuji Kihara,  Tae Yun Kim,  Fuminori Kimura,  Yusuke Matsui,  Tsukasa Oishi,  Tsutomu Yoshihara,  

[Date]2006/4/6
[Paper #]ICD2006-11
A 4Mb MRAM and its experimental application

Tadahiko SUGIBAYASHI,  Takeshi HONDA,  Noboru SAKIMURA,  Kiyokazu NAGAHARA,  Sadahiko MIURA,  Ken-ichi SHIMURA,  Kiyotaka TSUJI,  Yoshiyuki FUKUMOTO,  Hiroaki HONJO,  Tetsuhiro SUZUKI,  Yuko KATO,  Shinsaku SAITO,  Naoki KASAI,  Hideaki NUMATA,  Norikazu OSHIMA,  Ryusuke NEBASHI,  Katsumi SUEMITSU,  Tomonori MUKAI,  Kaoru MORI,  Shunsuke FUKAMI,  Nobuyuki ISHIWATA,  Hiromitsu HADA,  Shuichi TAHARA,  

[Date]2006/4/6
[Paper #]ICD2006-12
High Performance 16Mb MRAM for Portable Applications

Yuui SHIMIZU,  Yoshihisa IWATA,  Kenji TSUCHIDA,  Tsuneo INABA,  Ryosuke TAKIZAWA,  Yoshihiro UEDA,  Kiyotaro ITAGAKI,  Yoshiaki ASAO,  HOSOTANI Keiji /,  Sumio IKEGAWA,  Tadashi KAI,  Masahiko NAKAYAMA,  Hiroaki YODA,  

[Date]2006/4/6
[Paper #]ICD2006-13
Spin-Transfer Torque Writing Technology (STT-RAM) For Future MRAM

Hide Nagai,  Yiming Huai,  Shuichi Ueno,  Tsuyoshi Koga,  

[Date]2006/4/6
[Paper #]ICD2006-14
A 16M bit SRAM with improved characteristics using DRAM technology

Yuji KIHARA,  Yasushi NAKASHIMA,  Takashi IZUTSU,  Masayuki NAKAMOTO,  Tsutomu YOSHIHARA,  

[Date]2006/4/6
[Paper #]ICD2006-15
Redefinition of Write Margin for Next-Generation SRAMs and Write-Margin Monitoring circuits

Koichi Takeda,  Hidetoshi Ikeda,  Yasuhiko Hagihara,  Masahiro Nomura,  Hiroyuki Kobatake,  

[Date]2006/4/6
[Paper #]ICD2006-16
Low-Power Low-Voltage SRAM Design for Battery Operation

Masanao YAMAOKA,  

[Date]2006/4/6
[Paper #]ICD2006-17
Worst-Case Analysis to Obtain Stable Read/Write DC Margin of High Density 6T-SRAM-Array with Local Vth Variability

Yasumasa TSUKAMOTO,  Koji NII,  Susumu IMAOKA,  Yuji ODA,  Shigeki OHBAYASHI,  Makoto YABUUCHI,  Hiroshi MAKINO,  Koichiro ISHIBASHI,  Hirofumi SHINOHARA,  

[Date]2006/4/6
[Paper #]ICD2006-18
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