Electronics-Integrated Circuits and Devices(Date:2002/04/05)

Presentation
表紙

,  

[Date]2002/4/5
[Paper #]
目次

,  

[Date]2002/4/5
[Paper #]
A Quasi-Matrix Ferroelectric Memory for Future Silicon Storage : A New High-Density and High-Speed Nonvolatile Memory using Ferroelectric Film

Toshiyuki Nishihara,  Yasuyuki Ito,  

[Date]2002/4/5
[Paper #]ICD2002-8
Design of Ferroelectric-Based Logic-in-Memory VLSI

Hiromitsu KIMURA,  Takahiro HANYU,  Michitaka KAMEYAMA,  Yoshikazu FUJIMORI,  Takashi NAKAMURA,  Hidemi TAKASU,  

[Date]2002/4/5
[Paper #]ICD2002-9
Development of Nonvolatile Logic with Ferroelectric Capacitors

Yoshikazu FUJIMORI,  Takashi NAKAMURA,  Hidemi TAKASU,  

[Date]2002/4/5
[Paper #]ICD2002-10
Development of 0.1μm-rule MRAM Cell

Kiyotaka TSUJI,  Katsumi SUEMITSU,  Tomonori MUKAI,  Kiyokazu NAGAHARA,  Koichi MASUBUCHI,  Hiroaki UTSUMI,  Kuniko Kikuta,  

[Date]2002/4/5
[Paper #]ICD2002-11
Impact of Lower Dot Size Scaling on Charge Retention in Doubly Stacked Si Dot Memory

Ryuji Ohba,  Naoharu Sugiyama,  Junji Koga,  Ken Uchida,  

[Date]2002/4/5
[Paper #]ICD2002-12
MELD : Reliable Nonvolatile Memory Concept using Nano-Dot Storage Node

Tomoyuki ISHII,  Taro OSABE,  Toshiyuki MINE,  Fumio MURAI,  Kazuo YANO,  

[Date]2002/4/5
[Paper #]ICD2002-13
SESO : Scalable Memory Using Ultra-thin Polycrystalline Silicon

Tomoyuki ISHI,  Taro OSABE,  Toshiyuki MINE,  Fumio MURAI,  Kazuo YANO,  

[Date]2002/4/5
[Paper #]ICD2002-14
What is the most suitable on-chip memory for 90-65nm CMOS technology

Koichiro Ishibashi,  Shoichiro Kawashima,  Mitsuru Hiraki,  Yasunobu Nakase,  Tomoyuki Ishii,  Naohiko Sugibayashi,  Shinji Miyano,  

[Date]2002/4/5
[Paper #]ICD2002-15
[OTHERS]

,  

[Date]2002/4/5
[Paper #]