Electronics-Integrated Circuits and Devices(Date:2000/01/21)

Presentation
表紙

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[Date]2000/1/21
[Paper #]
目次

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[Date]2000/1/21
[Paper #]
Variable Threshold Filed-Effect-Transistor with Paired Gates Fabricated by Using the Wafer-Bonding Techniqe

Satoshi KODAMA,  Tomofumi FURUTA,  Hiroshi ITO,  Noriyuki WATANABE,  Atsushi KANDA,  Masahiro MURAGUCHI,  Tadao ISHIBASHI,  

[Date]2000/1/21
[Paper #]ED99-279,MW99-203,ICD99-254
An AlGaAs Hetero MESFET with a Graded Pulse Doped Channel

K. Nakata,  R. Sakamoto,  T. Hashinaga,  N. Kuwata,  K. Otobe,  S. Nakajima,  

[Date]2000/1/21
[Paper #]ED99-280,MW99-204,ICD99-255
L-band Power Perfoemance of AlGaN/GaN HJFETs

K. Kunihiro,  N. Hayama,  K. Kasahara,  Y. Takahashi,  T. Nakayama,  Y. Ohno,  K. Matsunaga,  H. Miyamoto,  Y. Ando,  M. Kuzuhara,  

[Date]2000/1/21
[Paper #]ED99-281,MW99-205,ICD99-256
200W GaAs-Based MODFET Power Amplifier for W-CDMA Base Stations

H. Ishida,  T. Yokoyama,  H. Furukawa,  T. Tanaka,  S. Morimoto,  M. Maeda,  Y. Ota,  D. Ueda,  

[Date]2000/1/21
[Paper #]ED99-282,MW99-206,ICD99-257
A 150 W E-mode GaAs Power FET with 35% PAE for IMT-2000 Base Station

Yasunori Tateno,  Hidenori Takahashi,  Yasuhiro Nakasha,  Masaki Nagahara,  Takeshi Igarashi,  Kazukiyo Joshin,  Masahiko Takikawa,  Jun Fukaya,  

[Date]2000/1/21
[Paper #]ED99-283,MW99-207,ICD99-258
W-CDMA Radio Transmission Technology for Third Generation Mobile Communication System

Shinji Uebayashi,  

[Date]2000/1/21
[Paper #]ED99-284,MW99-208,ICD99-259
W-CDMA 0.2cc HBT High-Efficiency Power Amplifier Module

N. Miyazawa,  H. Itoh,  T. Iwai,  Y. Nakasha,  T. Miyashita,  S. Ohara,  K.[Date]2000/1/21
[Paper #]ED99-285,MW99-209,ICD99-260

A Linearized Heterojunction FET-Based Power Amplifier with High Efficiency over Wide Output Power Range for Wide-Band CDMA Handsets

Gary HAU,  Takeshi B. Nishimura,  Naotaka Iwata,  

[Date]2000/1/21
[Paper #]ED99-286,MW99-210,ICD99-261
A Buried p-Gate Heterojunction Field Effect Transistor for Digital Wireless Communication Systems

Mitsuhiro Nakamura,  Shinichi Wada,  Masayoshi Abe,  Hidetoshi Kawasaki,  Ichiro[Date]2000/1/21
[Paper #]ED99-287,MW99-211,ICD99-262

A 3.2-V Operation HBT-MMIC Power Amplifier for GSM/DCS Applications

Kazuya YAMAMOTO,  Teruyuki SHIMURA,  Tomoyuki ASADA,  Toshio OKUDA,  Kazutomi MORI,  Kenichiro CHOUMEI,  Satoshi SUZUKI,  Takeshi MIURA,  Shinichi FUJIMOTO,  Ryo HATTORI,  Hirofumi NAKANO,  Kenji HOSOGI,  Jun OTSUJI,  Akira INOUE,  Koutarou YAJIMA,  Toshio OGATA,  Yukio MIYAZAKI,  Masahide YAMANOUCHI,  

[Date]2000/1/21
[Paper #]ED99-288,MW99-212,ICD99-263
A HIGH EFFICIENCY AND LOW DISTORTION GAAS POWER MMIC DESIGN IN THE WIDE LOAD IMPEDANCE RANGE BY EXTENDED USE OF LOAD-PULL METHOD

Kaoru ISHIDA,  Hikaru IKEDA,  Hiroaki KOSUGI,  Masaaki NISHIJIMA,  Tomoki UWANO,  

[Date]2000/1/21
[Paper #]ED99-289,MW99-213,ICD99-264
[OTHERS]

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[Date]2000/1/21
[Paper #]