Electronics-Electron Devices(Date:2015/07/24)

Presentation
Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Keita Konishi(NICT),  Takafumi Kamimura(NICT),  Man Hoi Wong(NICT),  Kohei Sasaki(MURA Corp.),  Akito Kuramata(MURA Corp.),  Shigenobu Yamakoshi(MURA Corp.),  Masataka Higashiwaki(NICT),  

[Date]2015-07-24
[Paper #]ED2015-40
Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates

Moe Naganawa(Univ. of Fukui),  Toshichika Aoki(Univ. of Fukui),  Tomoyoshi Mishima(Hosei Univ.),  Kenji Shiojima(Univ. of Fukui),  

[Date]2015-07-24
[Paper #]ED2015-37
Electrical characteristics of N-polar p-type GaN Schottky contacts

Toshichika Aoki(Univ. of Fukui),  Tomoyuki Tanikawa(Tohoku Univ.),  Ryuji Katayama(Tohoku Univ.),  Takashi Matsuoka(Tohoku Univ.),  Kenji Shiojima(Univ. of Fukui),  

[Date]2015-07-24
[Paper #]ED2015-36
Fabrication of MFS-type diamond FET structure using organic ferroelectrics

Ryota Karaya(Kanazawa Univ.),  Hiroyuki Furuichi(Kanazawa Univ.),  Takashi Nakajima(Tokyo Univ. of Sci.),  Norio Tokuda(Kanazawa Univ.),  Takeshi Kawae(Kanazawa Univ.),  

[Date]2015-07-24
[Paper #]ED2015-42
Electrical properties of SiC MOSFETs with various substrate impurity concentrations

Hiroshi Yano(NAIST/Univ. Tsukuba),  Hiroto Yuki(NAIST),  Takashi Fuyuki(NAIST),  

[Date]2015-07-24
[Paper #]ED2015-41
Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices

Toshi-kazu Suzuki(JAIST),  Son Phuong Le(JAIST),  Tuan Quy Nguyen(JAIST),  Hong-An Shih(JAIST),  

[Date]2015-07-24
[Paper #]ED2015-39
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs

Yuichi Minoura(Fujitsu Labs.),  Naoya Okamoto(Fujitsu Labs.),  Toshihiro Ohki(Fujitsu Labs.),  Shiro Ozaki(Fujitsu Labs.),  Kozo Makiyama(Fujitsu Labs.),  Yoichi Kamada(Fujitsu Labs.),  Keiji Watanabe(Fujitsu Labs.),  

[Date]2015-07-24
[Paper #]ED2015-38
Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode

Koichi Maezawa(Univ. Toyama),  Yuichiro Kakutani(Univ. Toyama),  Taishu Nakayama(Univ. Toyama),  Takumi Tajika(Univ. Toyama),  Masayuki Mori(Univ. Toyama),  

[Date]2015-07-25
[Paper #]ED2015-46
Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain

Haruki Kinoshita(Tokyo Tech),  Seiko Netsu(Tokyo Tech),  Yuichi Mishima(Tokyo Tech),  Toru Kanazawa(Tokyo Tech),  Yasuyuki Miyamoto(Tokyo Tech),  

[Date]2015-07-25
[Paper #]ED2015-44
Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer

Tatsuya Taketsuru(TUS),  Sachie Fujikawa(TUS),  Yoshiaki Harada(TUS),  Hiroki Suzuki(TUS),  Kyousuke Isono(TUS),  Sanshiro Kato(TUS),  Daisuke Tuji(TUS),  Hiroki I. Fujishiro(TUS),  

[Date]2015-07-25
[Paper #]ED2015-45
In-plane electrical properties of MnAs/InAs/GaAs(111)B heterostructures

Md Earul Islam(JAIST),  Cong Thanh Nguyen(JAIST),  Masashi Akabori(JAIST),  

[Date]2015-07-25
[Paper #]ED2015-43