IEICE Technical Committee

Electronics-Electron Devices(Date:2015/05/28)

Presentation

Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method

Yuta Koga(Saga Univ.), Kazuya Harada(Saga Univ.), Kenji Hanada(Saga Univ.), Toshiyuki Oishi(Saga Univ.), Makoto Kasu(Saga Univ.),

[Date]2015-05-28
[Paper #]ED2015-22,CPM2015-7,SDM2015-24

Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator

Toshiyuki Oishi(Saga Univ.), Ryutaro Higashi(Saga Univ.), Kazuya Harada(Saga Univ.), Yuta Koga(Saga Univ.), Kazuyuki Hirama(NTT), Makoto Kasu(Saga Univ.),

[Date]2015-05-28
[Paper #]ED2015-24,CPM2015-9,SDM2015-26

Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation

Daiki Kawaguchi(Nihon Univ.), Keisuke Yoshida(Nihon Univ.), Miu Kobayashi(Nihon Univ.), Shinnosuke Harumiya(Nihon Univ.), Tomoko Nagata(Nihon Univ.), Hiroshi Yamamoto(Nihon Univ.), Nobuyuki Iwata(Nihon Univ.),

[Date]2015-05-28
[Paper #]ED2015-25,CPM2015-10,SDM2015-27

Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates

Takashi Sumida(Nihon Univ.), Kosuke Hashimoto(Nihon Univ.), Shinjiro Fukui(Nihon Univ.), Tomoko Nagata(Nihon Univ.), Hiroshi Yamamoto(Nihon Univ.), Nobuyuki Iwata(Nihon Univ.),

[Date]2015-05-28
[Paper #]ED2015-26,CPM2015-11,SDM2015-28

Study on self-assembled monolayers by the immersion method on SiC substrate

Yuya Suzuki(NiTech), Yuji Hirose(NiTech), Shohei Tamaoki(NiTech), Reina Miyagawa(NiTech), Takatoshi Kinoshita(NiTech), Osamu Eryu(NiTech),

[Date]2015-05-28
[Paper #]ED2015-18,CPM2015-3,SDM2015-20

Growth and preliminary MOSFETs of corundum-structured oxide semiconductors

Yoshito Ito(Kyoto Univ.), Kentaro Kaneko(Kyoto Univ.), Shizuo Fujita(Kyoto Univ.),

[Date]2015-05-28
[Paper #]ED2015-21,CPM2015-6,SDM2015-23

Control of N composition of GaAsN alloy grown by surface nitridation

Noriyuki Urakami(Toyohashi Tech.), Keisuke Yamane(Toyohashi Tech.), Hiroto Sekiguchi(Toyohashi Tech.), Hiroshi Okada(Toyohashi Tech.), Akihiro Wakahara(Toyohashi Tech.),

[Date]2015-05-28
[Paper #]ED2015-20,CPM2015-5,SDM2015-22

Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes

Syuzo Yamaguchi(Saga Univ.), Toshiyuki Oishi(Saga Univ.), Yutaro Yamaguchi(Mitsubishi Electric Corp.), Koji Yamanaka(Mitsubishi Electric Corp.),

[Date]2015-05-28
[Paper #]ED2015-23,CPM2015-8,SDM2015-25

Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading

Susumu Ichimura(Chubu Univ.), Hideo Uchida(Chubu Univ.), Koichi Wakita(Chubu Univ.), Yasuhiko Hayashi(Okayama Univ.), Masayoshi Umeno(Chubu Univ.),

[Date]2015-05-28
[Paper #]ED2015-17,CPM2015-2,SDM2015-19

Optical properties of InGaN nanoplates grown by molecular beam epitaxy

Tetsuya Kouno(Shizuoka Univ.), Masaru Sakai(Univ. of Yamanashi), Katsumi Kishino(Sophia UNiv.), Kazuhiko Hara(Shizuoka Univ.),

[Date]2015-05-28
[Paper #]ED2015-19,CPM2015-4,SDM2015-21

Synthesis of graphenes by chemical vapor deposition using liquid precursor

Naoki Kishi(NITech), Takaaki Iwata(NITech), Kazuki Iwama(NITech), Jianfeng Bao(NITech), Liu Huito(NITech), Tetsuo Soga(NITech),

[Date]2015-05-28
[Paper #]ED2015-16,CPM2015-1,SDM2015-18

Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer

Hojun Lee(Nagoya Univ.), Tadashi Mitsunari(Nagoya Univ.), Yoshio Honda(Nagoya Univ.), Hiroshi Amano(Nagoya Univ.),

[Date]2015-05-28
[Paper #]

Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation

Yusuke Kumazaki(Hokkaido Univ.), Akio Watanabe(Hokkaido Univ.), Zenji Yatabe(Hokkaido Univ.), Taketomo Sato(Hokkaido Univ.),

[Date]2015-05-29
[Paper #]ED2015-28,CPM2015-13,SDM2015-30

Influence of stirring on SnS deposition using chemical bath deposition

Taishi Suzuki(Shizuoka Univ.), Yasushi Takano(Shizuoka Univ.), Akihiro Ishida(Shizuoka Univ.),

[Date]2015-05-29
[Paper #]ED2015-32,CPM2015-17,SDM2015-34

Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels

Shin Watanabe(TUT), Fumihiro Dasai(TUT), Tatsuya Iwata(TUT), Makoto Ishida(TUT), Toshiaki Hattori(TUT), Kazuaki Sawada(TUT),

[Date]2015-05-29
[Paper #]ED2015-27,CPM2015-12,SDM2015-29

Effects of annealing on properties of electrochemically deposited CuxZnyS thin films

Tong Bayingaerdi(NITech), Masaya Ichimura(NITech),

[Date]2015-05-29
[Paper #]ED2015-31,CPM2015-16,SDM2015-33

Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC

Kimihiro Kohama(NIT), Yuto Mori(NIT), Masashi Kato(NIT), Masaya Ichimura(NIT),

[Date]2015-05-29
[Paper #]ED2015-30,CPM2015-15,SDM2015-32

Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition

Zhang Chaolong(NIT), Junie Jhon M. Vequizo(TTI), Masaya Ichimura(NIT),

[Date]2015-05-29
[Paper #]ED2015-33,CPM2015-18,SDM2015-35

Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO

Takahiro Kajima(Nagoya Inst. of Tech.), Shoichi Kawai(DENSO CORP.), Masaya Ichimura(Nagoya Inst. of Tech.),

[Date]2015-05-29
[Paper #]ED2015-34,CPM2015-19,SDM2015-36

Observation of fluorescence from Legionella pneumophila capturedin a microfluidic chip

Yusuke Nishimura(Toyohashi Univ. of Tech.), Ryuhei Hayashi(Toyohashi Univ. of Tech.), Hirokazu Nakazawa(Toyohashi Univ. of Tech.), Makoto Ishida(Toyohashi Univ. of Tech.), Kazuaki Sawada(Toyohashi Univ. of Tech.), Hiromu Ishii(Toyohashi Univ. of Tech.), Katsuyuki Machida(Tokyo Institute of Tech., NTT-AT), Kazuya Masu(Tokyo Institute of Technology, NTT Advanced Tech.), Changle Wang(Kyusyu Univ.), Ken-Ichiro Iida(Kyusyu Univ.), Mitsumasa Saito(Kyusyu Univ.), Shin-ichi Yoshida(Kyusyu Univ.),

[Date]2015-05-29
[Paper #]ED2015-35,CPM2015-20,SDM2015-37