Electronics-Electron Devices(Date:2013/02/20)

Presentation
表紙

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[Date]2013/2/20
[Paper #]
目次

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[Date]2013/2/20
[Paper #]
Ballistic transport and photovoltaic effect in graphene/h-BN

Tomoki MACHIDA,  Satoru MASUBUCHI,  Masahiro ONUKI,  Kazuyuki IGUCHI,  Sei MORIKAWA,  Takehiro YAMAGUCHI,  Miho ARAI,  Kenji WATANABE,  Takashi TANIGUCHI,  

[Date]2013/2/20
[Paper #]ED2012-128,SDM2012-157
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers

Hiroya IKEDA,  Yuhei SUZUKI,  Kazutoshi MIWA,  Faiz SALLEH,  

[Date]2013/2/20
[Paper #]ED2012-129,SDM2012-158
Fabrication of Cu_2O/TiO_2 heterojunction solar cells by electrochemical deposition and electrophoresis

Yoshihito KATO,  Masaya ICHIMURA,  

[Date]2013/2/20
[Paper #]ED2012-130,SDM2012-159
Possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation

Hiromu SAKAKIBARA,  Koji WADA,  Masashi KATO,  Masaya ICHIMURA,  

[Date]2013/2/20
[Paper #]ED2012-131,SDM2012-160
Individual Dopant Nature in Si Lateral Nano-pn Junctions

Sri PURWIYANTI,  Arief UDHIARTO,  Roland NOWAK,  Daniel MORARU,  Takeshi MIZUNO,  Djoko HARTANTO,  Ryszard JABLONSKI,  Michiharu TABE,  

[Date]2013/2/20
[Paper #]ED2012-132,SDM2012-161
Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications

Yi SUN,  Yuta KIMURA,  Toshihiko MAEMOTO,  Shigehiko SASA,  Seiya KASAI,  

[Date]2013/2/20
[Paper #]ED2012-133,SDM2012-162
Fabrication of Graphene-based Three-branch Nano junction (TBJ) and Its Application to Logic Gates

Xiang Yin,  Seiya Kasai,  

[Date]2013/2/20
[Paper #]ED2012-134,SDM2012-163
Al_2O_3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate

Koichi MAEZAWA,  Taihei ITO,  Azusa KADODA,  Koji NAKAYAMA,  Yuichiro YASUI,  Masayuki MORI,  Eiji MIYAZAKI,  Takashi MIZUTANI,  

[Date]2013/2/20
[Paper #]ED2012-135,SDM2012-164
Field-Assisted Self -Assembly Process of InAs nanowires

Hiroaki Funayama,  Tatsuro Watanabe,  Kenji Mitimata,  Takao Waho,  Shin Murakami,  Kazuhiko Shimomura,  

[Date]2013/2/20
[Paper #]ED2012-136,SDM2012-165
Integration of CMOS 1-bit Analog Selector Circuits and Single-Electron Transistors Operating at Room Temperature

Ryota SUZUKI,  Motoki NOZUE,  Takuya SARAYA,  Toshiro HIRAMOTO,  

[Date]2013/2/20
[Paper #]ED2012-137,SDM2012-166
Characteristics of double quantum dot Si single-electron transistor caused by the number change of electrons in quantum dot

Takafumi UCHIDA,  Hiroto TAKENAKA,  Isamu YOSHIOKA,  Masashi ARITA,  Akira FUJIWARA,  Yasuo TAKAHASHI,  

[Date]2013/2/20
[Paper #]ED2012-138,SDM2012-167
Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices

Yoshinao MIZUGAKI,  

[Date]2013/2/20
[Paper #]ED2012-139,SDM2012-168
Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island

Masashi TAKIGUCHI,  Masataka MORIYA,  Hiroshi SHIMADA,  Yoshinao MIZUGAKI,  

[Date]2013/2/20
[Paper #]ED2012-140,SDM2012-169
Surface Modification of Graphene by Scanning Probe Microscopy Scratch Nanolithography

Ryutaro SUDA,  Takanari SAITO,  Taku YOSHIDA,  Ampere A. TSENG,  Jun-ichi SHIRAKASHI,  

[Date]2013/2/20
[Paper #]ED2012-141,SDM2012-170
In-Situ Temperature Measurements of Joule-Heated Graphene Using Near-Infrared CCD Imaging System

Takanari SAITO,  Ibuki ATSUMO,  Ryutaro SUDA,  Mitsuki ITO,  Jun-ichi SHIRAKASHI,  

[Date]2013/2/20
[Paper #]ED2012-142,SDM2012-171
Electrical Properties of Carbon Fibers Embedded with CNTs

Takehito WATANUKI,  Tomo TANAKA,  Eiichi SANO,  Bunshi FUGETSU,  

[Date]2013/2/20
[Paper #]ED2012-143,SDM2012-172
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[Date]2013/2/20
[Paper #]
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[Date]2013/2/20
[Paper #]
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