IEICE Technical Committee

Electronics-Electron Devices(Date:2012/01/31)

Presentation

表紙

[Date]2012/1/31
[Paper #]

Deterministic-doped Silicon Devices and Their Quantum Transport

Takahiro SHINADA, Masahiro HORI, Filipo GUAGLIARDO, Yukinori ONO, Kuninori KUMAGAI, Takashi TANII, Enrico PRATI,

[Date]2012/1/31
[Paper #]ED2011-142,SDM2011-159

Ab initio Analysis of Electronic States for Single Phosphorous Dopants in Silicon Nanoscale Transistors

Yohei KUZUYA, Daniel MORARUI, Takeshi MIZUNO, Michiharu TABE, Hiroshi MIZUTA,

[Date]2012/1/31
[Paper #]ED2011-143,SDM2011-160

KFM observation of individual dopant potentials and electron charging

Roland NOWAK, Miftahul ANWAR, Daniel MORARU, Takeshi MIZUNO, Ryszard JABLONSKI, Michiharu TABE,

[Date]2012/1/31
[Paper #]ED2011-144,SDM2011-161

High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation

Hiroto TAKENAKA, Michito SHINOHARA, Takafumi UCHIDA, Masashi ARITA, Akira FUJIWARA, Yasuo TAKAHASHI,

[Date]2012/1/31
[Paper #]ED2011-145,SDM2011-162

High-frequency characterization of InAs nanowire MISFETs

Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho, Kai Blekker, Werner Prost, Franz-Josef Tegude,

[Date]2012/1/31
[Paper #]ED2011-146,SDM2011-163

Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs

Pan JIE, Kazuki HAYANO, Masayuki MORI, Koichi MAEZAWA,

[Date]2012/1/31
[Paper #]ED2011-147,SDM2011-164

Gain enhancement in graphene terahertz amplifier with resonant structure

Yuya TAKATSUKA, Kazuhiro TAKAHAGI, Eiichi SANO, Victor RYZHII, Taiichi OTSUJI,

[Date]2012/1/31
[Paper #]ED2011-148,SDM2011-165

Light emission from Silicon quantum-well by tunneling current injection

Jinichiro NOBORISAKA, Katsuhiko NISHIGUCHI, Hiroyuki KAGESHIMA, Akira FUJIWARA,

[Date]2012/1/31
[Paper #]ED2011-149,SDM2011-166

Observation of Conductance Quantization during SPM Scratching

Ryutaro SUDA, Takahiro OHYAMA, Jun-ichi SHIRAKASHI,

[Date]2012/1/31
[Paper #]ED2011-150,SDM2011-167

Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration

Mitsuki ITO, Shunsuke AKIMOTO, Jun-ichi SHIRAKASHI,

[Date]2012/1/31
[Paper #]ED2011-151,SDM2011-168

Electrical characteristics of MgF_2/Fe/MgF_2 thin films

Takuma ISHIKAWA, Eita SATO, Kouichi HAMADA, Masashi ARITA, Yasuo TAKAHASHI,

[Date]2012/1/31
[Paper #]ED2011-152,SDM2011-169

Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias

Faiz SALLEH, Kazutoshi MIWA, Hiroya IKEDA,

[Date]2012/1/31
[Paper #]ED2011-153,SDM2011-170

Stochastic resonance using a steep-subthreshold-swing transistor

Katsuhiko NISHIGUCHI, Akira FUJIWARA,

[Date]2012/1/31
[Paper #]ED2011-154,SDM2011-171

The Luttinger-liquid behavior in single-walled carbon nanotube networks

Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu,

[Date]2012/1/31
[Paper #]ED2011-155,SDM2011-172

Charge distribution near interface of high-k gate insulator in CNFETs

Kosuke SUZUKI, Yutaka OHNO, Shigeru KISHIMOTO, Takashi MIZUTANI,

[Date]2012/1/31
[Paper #]ED2011-156,SDM2011-173

Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs

Toru Muramatsu, Seiya Kasai, Zenji Yatabe,

[Date]2012/1/31
[Paper #]ED2011-157,SDM2011-174

Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method

Masaki SATO, Toru MURAMATSU, Seiya KASAI,

[Date]2012/1/31
[Paper #]ED2011-158,SDM2011-175

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[Date]2012/1/31
[Paper #]