エレクトロニクス-電子デバイス(開催日：2010/06/23)

タイトル/著者/発表日/資料番号
表紙

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[発表日]2010/6/23
[資料番号]
目次

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[発表日]2010/6/23
[資料番号]
Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)

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[発表日]2010/6/23
[資料番号]ED2010-48,SDM2010-49
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)

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[発表日]2010/6/23
[資料番号]ED2010-49,SDM2010-50
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)

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[発表日]2010/6/23
[資料番号]ED2010-50,SDM2010-51
Piezoelectric material based passive RFID tags(Session 1A : Emerging Device Technology 1)

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[発表日]2010/6/23
[資料番号]ED2010-51,SDM2010-52
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)

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[発表日]2010/6/23
[資料番号]ED2010-52,SDM2010-53
Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)

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[発表日]2010/6/23
[資料番号]ED2010-53,SDM2010-54
Applications of Smart Cut^ Technologies to III-V Based Engineered Substrates

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[発表日]2010/6/23
[資料番号]ED2010-54,SDM2010-55
A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)

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[発表日]2010/6/23
[資料番号]ED2010-55,SDM2010-56
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1)

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[発表日]2010/6/23
[資料番号]ED2010-56,SDM2010-57
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)

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[発表日]2010/6/23
[資料番号]ED2010-57,SDM2010-58
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)

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[発表日]2010/6/23
[資料番号]ED2010-58,SDM2010-59
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-59,SDM2010-60
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-60,SDM2010-61
Fundamental oscillations at ～900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-61,SDM2010-62
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-62,SDM2010-63
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-63,SDM2010-64
A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-64,SDM2010-65
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)

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[発表日]2010/6/23
[資料番号]ED2010-65,SDM2010-66
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