Electronics-Electron Devices(Date:2010/06/23)

Presentation
表紙

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[Date]2010/6/23
[Paper #]
目次

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[Date]2010/6/23
[Paper #]
Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)

Hiroshi YAMAGUCHI,  Imran MAHBOOB,  Hajime OKAMOTO,  Koji ONOMITSU,  

[Date]2010/6/23
[Paper #]ED2010-48,SDM2010-49
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)

Woo Young CHOI,  

[Date]2010/6/23
[Paper #]ED2010-49,SDM2010-50
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)

Young Su KIM,  Min Ho KANG,  Kang Suk JEONG,  Jae Sub OH,  Dong Eun YOO,  Hi Deok LEE,  

[Date]2010/6/23
[Paper #]ED2010-50,SDM2010-51
Piezoelectric material based passive RFID tags(Session 1A : Emerging Device Technology 1)

Hyunchul Bae,  Jaekwon Kim,  Jinwook Burm,  

[Date]2010/6/23
[Paper #]ED2010-51,SDM2010-52
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)

Masanobu MIYAO,  Kohei HAMAYA,  

[Date]2010/6/23
[Paper #]ED2010-52,SDM2010-53
Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)

Takashi SUEMASU,  Takanobu SAITO,  Atsushi OKADA,  Katsuaki TOH,  M. Ajmal Khan,  Noritaka USAMI,  

[Date]2010/6/23
[Paper #]ED2010-53,SDM2010-54
Applications of Smart Cut^ Technologies to III-V Based Engineered Substrates

Makoto YOSHIMI,  

[Date]2010/6/23
[Paper #]ED2010-54,SDM2010-55
A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)

Gil Sung Lee,  Doo-Hyun Kim,  Jang-Gn Yun,  Jung Hoon Lee,  Yoon Kim,  Jong-Ho Lee,  Hyungcheol Shin,  Byung-Gook Park,  

[Date]2010/6/23
[Paper #]ED2010-55,SDM2010-56
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1)

Jong-Dae Lee,  Hyun-Min Seung,  Kyoung-Cheol Kwon,  Jea-Gun Park,  

[Date]2010/6/23
[Paper #]ED2010-56,SDM2010-57
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)

Guobin WEI,  Yuta GOTO,  Akiko OHTA,  Katsunori MAKIHARA,  Hideki MURAKAMI,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2010/6/23
[Paper #]ED2010-57,SDM2010-58
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)

Doo-Hyun Kim,  Gil Sung Lee,  Seongjae Cho,  Jung Hoon Lee,  Jang-Gn Yun,  Dong Hua Li,  Yoon Kim,  Se Hwan Park,  

[Date]2010/6/23
[Paper #]ED2010-58,SDM2010-59
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2)

Donghyun Kim,  Jaewook Jeong,  Yongtaek Hong,  

[Date]2010/6/23
[Paper #]ED2010-59,SDM2010-60
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)

Y-U Song,  S. Ohmi,  

[Date]2010/6/23
[Paper #]ED2010-60,SDM2010-61
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)

Safumi SUZUKI,  Kiyohito SAWADA,  Atsushi TERANISHI,  Masahiro ASADA,  Hiroki SUGIYAMA,  Haruki YOKOYAMA,  

[Date]2010/6/23
[Paper #]ED2010-61,SDM2010-62
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes(Session 3A : Emerging Device Technology 2)

Nobuhiko Tanaka,  Mitsufumi Saito,  Michihiko Suhara,  

[Date]2010/6/23
[Paper #]ED2010-62,SDM2010-63
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2)

Min Jin LEE,  Young CHOI,  

[Date]2010/6/23
[Paper #]ED2010-63,SDM2010-64
A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)

Juhyun Oh,  Dae Hwan Chun,  Eui Bok Lee,  Young Hwan Kim,  Chun Keun Kim,  Byeong Kwon Ju,  Man Young Sung,  Yong Tae Kim,  

[Date]2010/6/23
[Paper #]ED2010-64,SDM2010-65
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)

Yong Tae Kim,  Eui Bok Lee,  Young Hwan Kim,  Chun Keun Kim,  Byeong Kwon Ju,  

[Date]2010/6/23
[Paper #]ED2010-65,SDM2010-66
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