Electronics-Electron Devices(Date:2010/06/10)

Presentation
表紙

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[Date]2010/6/10
[Paper #]
目次

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[Date]2010/6/10
[Paper #]
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer

Tatsuya IWASUGI,  Sara KHAMSEH,  Azusa KADODA,  Kimihiko NAKATANI,  Masayuki MORI,  Koichi MAEZAWA,  

[Date]2010/6/10
[Paper #]ED2010-33
Fabrication and characterization of InAs ultra-thin films of flexible substrates

Hayato TAKITA,  Norihiko HASHIMOTO,  Masahiro KUDO,  Masashi AKABORI,  Toshi-kazu SUZUKI,  

[Date]2010/6/10
[Paper #]ED2010-34
Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors

Taketomo SATO,  Naoki YOSHIZAWA,  Hiroyuki OKAZAKI,  Tamotsu HASHIZUME,  

[Date]2010/6/10
[Paper #]ED2010-35
Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors

Toshi-kazu SUZUKI,  Nariaki TANAKA,  

[Date]2010/6/10
[Paper #]ED2010-36
Electrical Characterization of Recessed-gate AlGaN/GaN Heterojunction FETs

Misato Mukohno,  Naoki Yamada,  Hirokuni Tokuda,  Masaaki Kuzuhara,  

[Date]2010/6/10
[Paper #]ED2010-37
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs

Yoshimi YAMASHITA,  Issei WATANABE,  Akira ENDOH,  Nobumitsu HIROSE,  Toshiaki MATSUI,  Takashi MIMURA,  

[Date]2010/6/10
[Paper #]ED2010-38
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs

Masataka HIGASHIWAKI,  Srabanti CHOWDHURY,  Brian L. SWENSON,  Umesh K. MISHRA,  

[Date]2010/6/10
[Paper #]ED2010-39
Understanding of C-V characteristics in AlGaN/GaN MIS structure

Chihoko Mizue,  Tamotsu Hashizume,  

[Date]2010/6/10
[Paper #]ED2010-40
Effect of interface properties on characteristics of carbon nanotube FETs

Yutaka OHNO,  Naoki MORIYAMA,  Takamitsu KITAMURA,  Kosuke SUZUKI,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  

[Date]2010/6/10
[Paper #]ED2010-41
Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs

Takahiro HOMMA,  Hisanao WATANABE,  Shinsuke HARA,  Hiroki I. FUJISHIRO,  

[Date]2010/6/10
[Paper #]ED2010-42
Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region

Yosuke ITAGAKI,  Kiyoto ASAKAWA,  Hideaki SHINYA,  Mitsufumi SAITO,  Michihiko SUHARA,  

[Date]2010/6/10
[Paper #]ED2010-43
低純度シリコンを用いた太陽電池の高効率化(半導体のプロセス・デバイス(表面,界面,信頼性),一般)

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[Date]2010/6/10
[Paper #]ED2010-44
Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions

Masao TAKAHAHSI,  Yuko HIGASHI,  Hiroaki NARITA,  Hitoo IWASA,  Hikaru KOBAYASHI,  

[Date]2010/6/10
[Paper #]ED2010-45
Photo corrosion of Metal Gate Electrodes during Wet

Daisuke Watanabe,  Chiharu Kimura,  Hidemitsu Aoki,  

[Date]2010/6/10
[Paper #]ED2010-46
Methyl-BCN Film using Low Temperature Etching

Hidemitsu Aoki,  Makoto Hara,  Takuroh Masuzumi,  Zhiming Lu,  Tomoihro Kuki,  Chiharu Kimura,  Takashi Sugino,  

[Date]2010/6/10
[Paper #]ED2010-47
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[Date]2010/6/10
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[Date]2010/6/10
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