Electronics-Electron Devices(Date:2009/06/04)

Presentation
表紙

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[Date]2009/6/4
[Paper #]
目次

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[Date]2009/6/4
[Paper #]
Evaluation of Cu-Inhibitor Residue for Post Cu-CMP Cleaning

Atsushi Ito,  Ken Harada,  Yasuhiro Kawase,  Fumikazu Mizutani,  Makoto Hara,  Hidemitsu Aoki,  Chiharu Kimura,  Takashi Sugino,  

[Date]2009/6/4
[Paper #]ED2009-36
Post-CMP Cleaning by Megasonic Using Waveguide Tube Type Equipment

Kazunari SUZUKI,  Ki HAN,  Shouich OKANO,  Junichiro SOEJIMA,  Yoshikazu KOIKE,  

[Date]2009/6/4
[Paper #]ED2009-37
Development of bevel brush scrubbing process

Yoshiya HAGIMOTO,  Hayato IWAMOTO,  

[Date]2009/6/4
[Paper #]ED2009-38
Dependence of Characteristics of Methyl-BCN Film on RF Bias

Takuroh Masuzumi,  Makoto Hara,  Hidemitsu Aoki,  Zhiming Lu,  Chiharu Kimura,  Takashi Sugino,  

[Date]2009/6/4
[Paper #]ED2009-39
Electrical characterization of plasma-induced defects in GaN

Seiji NAKAMURA,  Koichi HOSHINO,  Shunsuke OCHIAI,  Michihiko SUHARA,  Tsugunori OKUMURA,  

[Date]2009/6/4
[Paper #]ED2009-40
Characterization of ALD-Al_2O_3/AlGaN/GaN interfaces

Chihoko Mizue,  Yujin Hori,  Marcin Miczek,  Tamotsu Hashizume,  

[Date]2009/6/4
[Paper #]ED2009-41
Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures

Narihiko MAEDA,  Masanobu HIROKI,  Takatomo ENOKI,  Takashi KOBAYASHI,  

[Date]2009/6/4
[Paper #]ED2009-42
A study on low damage dry etching for AlGaN/GaN-HEMT

Masahiko KURAGUCHI,  Miki YUMOTO,  Yoshiharu TAKADA,  Kunio Tsuda,  

[Date]2009/6/4
[Paper #]ED2009-43
Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb

Hiroyuki NISHINO,  Ichita KAWAHIRA,  Shinsuke HARA,  Hiroki I. FUJISHIRO,  

[Date]2009/6/4
[Paper #]ED2009-44
Anisotropy of two-dimensional electron mobilities in InGaAs/InP

Masashi AKABORI,  Thanh Quang TRINH,  Masahiro KUDO,  Thomas SCHAPERS,  Hilde HARDTDEGEN,  Toshi-kazu SUZUKI,  

[Date]2009/6/4
[Paper #]ED2009-45
In-situ etching by CBr_4 in InP heterojunction bipolar transistors with buried SiO_2 wire

Naoaki TAKEBE,  Hiroaki YAMASHITA,  Shinnosuke TAKAHASHI,  Hisashi SAITO,  Takashi KOBAYASHI,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2009/6/4
[Paper #]ED2009-46
Electrical characteristics of recessed gate MIS-AlGaN/GaN-HEMTs with a thermal CVD SiN gate insulator film

Toshiharu MARUI,  Shinichi HOSHI,  Fumihiko TODA,  Yoshiaki MORINO,  Masanori ITOH,  Hideyuki OKITA,  Isao TAMAI,  Shohei SEKI,  

[Date]2009/6/4
[Paper #]ED2009-47
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT

Atsushi YAMADA,  Kozo MAKIYAMA,  Toshihiro OHKI,  Masahito KANAMURA,  Kazukiyo JOSHIN,  Kenji IMANISHI,  Naoki HARA,  Toshihide KIKKAWA,  

[Date]2009/6/4
[Paper #]ED2009-48
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance

K. Matsushita,  H. Sakurai,  J. Teramoto,  J. Shim,  H. Kawasaki,  K. Takagi,  Y. Takada,  K. Tsuda,  

[Date]2009/6/4
[Paper #]ED2009-49
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[Date]2009/6/4
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[Date]2009/6/4
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[Date]2009/6/4
[Paper #]